VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
1
Cathode
1
2
Anode
2
• Designed and qualified
JEDEC®-JESD 47
according
to
• Fully isolated package (VINS = 2500 VRMS)
• UL pending
2L TO-220 FullPAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VR
200 V, 400 V, 600 V
VF at IF
1.3 V
IFSM
300 A
trr
60 ns
TJ max.
150 °C
Snap factor
0.6
Package
2L TO-220 FullPAK
Circuit configuration
Single
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
20
A
VRRM
200 to 600
V
IFSM
300
A
1.2
V
VF
10 A, TJ = 25 °C
trr
1 A, 100 A/μs
60
ns
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETF02FP-M3
200
300
VS-20ETF04FP-M3
400
500
VS-20ETF06FP-M3
600
700
TJ
VOLTAGE RATINGS
PART NUMBER
5
Revision: 15-Sep-17
Document Number: 96296
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 51 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
IFSM
VALUES
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
UNITS
A
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
4420
A2s
SYMBOL
TEST CONDITIONS
VALUES
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
20 A, TJ = 25 °C
1.30
60 A, TJ = 25 °C
1.67
rt
TJ = 150 °C
12.5
m
VF(TO)
TJ = 150 °C
0.9
V
Maximum forward voltage drop
VFM
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
IRM
TJ = 25 °C
TJ = 150 °C
V
0.1
VR = Rated VRRM
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
VALUES
UNITS
160
ns
10
A
1.25
μC
IF at 20 Apk
100 A/μs
25 °C
Typical
IFM
trr
ta
tb
t
dir
dt
Qrr
0.6
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
UNITS
-40 to +150
°C
2.5
62
Mounting surface, smooth, and greased
Approximate weight
Mounting torque
VALUES
°C/W
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
20ETF02FP
Marking device
Case style 2L TO-220 FullPAK
20ETF04FP
20ETF06FP
Revision: 15-Sep-17
Document Number: 96296
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
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160
120
80
40
60°
30°
90°
120°
180°
0
0
4
8
12
16
20
Average On-State Current (A)
45
35
30
25
20
60°
90°
180°
DC
0
0
5
10
15
20
25
30
35
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
100
120°
10
35
25
20
RMS limit
15
Ø
10
Conduction angle
TJ = 150 °C
5
0
0
5
10
15
20
25
Peak Half Sine Wave Forward Current (A)
Maximum Average ForwardPower Loss (W)
Fig. 2 - Current Rating Characteristics
30
TJ = 150 °C
5
0
0
5
10
15
20
25
35
30
Average Forward Current (A)
300
At any rated load condition and with
rated VRRM applied following surge.
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
50
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Average Forward Current (A)
180°
120°
90°
60°
30°
Ø
Conduction period
Fig. 4 - Forward Power Loss Characteristics
150
30°
RMS limit
15
Fig. 1 - Current Rating Characteristics
50
DC
180°
120°
90°
60°
30°
40
550
500
Maximum non-repetitive surge current
vs. pulse train duration.
450
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
50
0.001
0.01
0.1
1
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 15-Sep-17
Document Number: 96296
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VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
Vishay Semiconductors
1000
100
TJ = 25 °C
TJ = 150 °C
10
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Qrr - Typical Reverse Recovery Charge (µC)
Instantaneous Forward Current (A)
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0.20
TJ = 25 °C
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
0.05
IFM = 5 A
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
25
180°
120°
90°
60°
30°
20
RMS limit
30
15
Ø
10
Conduction angle
5
TJ = 150 °C
0
0
5
10
15
20
25
3.0
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
0.5
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
10
TJ = 150 °C
9
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Irr - Typical Reverse Recovery Current (A)
Maximum Average ForwardPower Loss (W)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
35
IFM = 30 A
TJ = 25 °C
3.5
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Qrr - Typical Reverse Recovery Charge (µC)
trr - Typical Reverse Recovery Time (µs)
Fig. 7 - Forward Voltage Drop Characteristics
4.0
70
TJ = 25 °C
60
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
IFM = 1 A
0
0
200
400
600
800
1000
Average Forward Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 15-Sep-17
Document Number: 96296
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
Irr - Typical Reverse Recovery Current (A)
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Vishay Semiconductors
100
TJ = 150 °C
IFM = 30 A
80
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (K/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
0.01
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 15-Sep-17
Document Number: 96296
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
F
06
FP
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration:
4
-
E = single diode
Package:
T = TO-220
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
FullPAK
8
-
Environmental digit:
F = fast soft recovery rectifier
02 = 200 V
04 = 400 V
06 = 600 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-20ETF02FP-M3
50
1000
Antistatic plastic tubes
VS-20ETF04FP-M3
50
1000
Antistatic plastic tubes
VS-20ETF06FP-M3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96157
Part marking information
www.vishay.com/doc?95392
SPICE model
www.vishay.com/doc?95410
Revision: 15-Sep-17
Document Number: 96296
6
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220 FullPAK
DIMENSIONS in millimeters
3.40
Hole Ø 3.10
10.6
10.0
3.7
3.2
2.80
2.44
7.31
6.50
16.0
15.8
Mold flash bleeding
3.3
3.1
Exposed Cu
13.56
12.90
2.54 TYP.
0.61
0.38
0.9
0.7
2.85
2.65
1.20
1.47
1.30
1.05
2.54 TYP.
Bottom view
R 0.7
(2 places)
R 0.5
4.8
4.6
5° ± 0.5°
5° ± 0.5°
Revision: 06-Jul-17
Document Number: 96157
1
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
1
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