VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
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Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
+
2
• Glass passivated pellet chip junction
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC®-JESD 47
2
1
3
D2PAK (TO-263AB)
1
Anode -
J-STD-020,
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
- Anode
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VR
200 V, 400 V, 600 V
VF at IF
1.3 V
IFSM
300 A
trr
60 ns
TJ max.
150 °C
DESCRIPTION
Snap factor
0.6
Package
D2PAK (TO-263AB)
Circuit configuration
Single
The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
20
A
Sinusoidal waveform
VRRM
200 to 600
V
IFSM
300
A
VF
10 A, TJ = 25 °C
1.2
V
trr
1 A, 100 A/μs
60
ns
TJ
Range
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETF02S-M3
200
300
VS-20ETF04S-M3
400
500
VS-20ETF06S-M3
600
700
VOLTAGE RATINGS
PART NUMBER
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
VALUES
TC = 97 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
UNITS
A
A2s
A2√s
Revision: 16-Dec-2021
Document Number: 94886
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VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM
Forward slope resistance
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
1.30
60 A, TJ = 25 °C
1.67
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
UNITS
V
12.5
mΩ
TJ = 150 °C
0.9
V
TJ = 25 °C
0.1
VR = rated VRRM
TJ = 150 °C
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/μs
25 °C
Typical
VALUES
UNITS
160
ns
10
A
1.25
μC
IFM
trr
ta
tb
t
dir
dt
Qrr
IRM(REC)
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
TEST CONDITIONS
TJ, TStg
RthJC
VALUES
UNITS
-40 to +150
°C
DC operation
0.9
°C/W
RthJA (1)
40
Approximate weight
2
g
0.07
oz.
20ETF02S
Case style D2PAK (TO-263AB)
Marking device
20ETF04S
20ETF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
Ø
120
Conduction angle
110
100
90
30°
60° 90° 120° 180°
80
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
150
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
Ø
Conduction period
120
110
30°
60°
100
90°
90
120°
DC
180°
70
80
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
35
Revision: 16-Dec-2021
Document Number: 94886
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
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Vishay Semiconductors
550
180°
120°
90°
60°
30°
30
25
20
RMS limit
15
Ø
Conduction angle
10
5
20ETF.. Series
TJ = 150 °C
5
10
15
20
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
20ETF.. Series
50
0.001
25
0.1
0.01
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
DC
180°
120°
90°
60°
30°
40
35
30
25
20
RMS limit
Ø
15
Conduction period
10
20ETF.. Series
TJ = 150 °C
5
0
0
5
10
20
15
25
30
1000
100
TJ = 25 °C
TJ = 150 °C
10
20ETF.. Series
1
35
0
1
3
2
4
5
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 4 - Forward Power Loss Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
300
0.20
At any rated load condition and with
rated VRRM applied following surge.
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
TJ = 25 °C
trr - Typical Reverse
Recovery Time (µs)
Peak Half Sine Wave
Forward Current (A)
1
Average Forward Current (A)
45
Maximum Average Forward
Power Loss (W)
450
100
0
0
Maximum non-repetitive surge current
versus pulse train duration.
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
35
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
IFM = 5 A
0.05
20ETF.. Series
IFM = 1 A
50
0
1
10
100
0
200
400
600
800
1000
Number of Equal Amplitude Half Cycle
Current Pulses (N)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Revision: 16-Dec-2021
Document Number: 94886
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
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10
0.5
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
4.0
70
IFM = 30 A
20ETF.. Series
TJ = 25 °C
3.0
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
IFM = 1 A
0
200
400
600
800
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
0.5
0
20ETF.. Series
TJ = 25 °C
60
Irr - Typical Reverse
Recovery Current (A)
3.5
Qrr - Typical Reverse
Recovery Charge (µC)
20ETF.. Series
TJ = 150 °C
9
Qrr - Typical Reverse
Recovery Charge (µC)
trr - Typical Reverse
Recovery Time (µs)
20ETF.. Series
TJ = 150 °C
IFM = 1 A
0
0
1000
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
100
Irr - Typical Reverse
Recovery Current (A)
20ETF.. Series
TJ = 150 °C
IFM = 30 A
80
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Revision: 16-Dec-2021
Document Number: 94886
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
ZthJC - Transient Thermal Impedance (K/W)
www.vishay.com
Vishay Semiconductors
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.01
0.0001
0.001
20ETF.. Series
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
F
06
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = single
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
F = fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
02 = 200 V
04 = 400 V
06 = 600 V
None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Revision: 16-Dec-2021
Document Number: 94886
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3
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Vishay Semiconductors
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-20ETF02S-M3
50
Antistatic plastic tubes
VS-20ETF02STRR-M3
800
13" diameter reel
VS-20ETF02STRL-M3
800
13" diameter reel
VS-20ETF04S-M3
50
Antistatic plastic tubes
VS-20ETF04STRR-M3
800
13" diameter reel
VS-20ETF04STRL-M3
800
13" diameter reel
VS-20ETF06S-M3
50
Antistatic plastic tubes
VS-20ETF06STRR-M3
800
13" diameter reel
VS-20ETF06STRL-M3
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 16-Dec-2021
Document Number: 94886
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 01-Jan-2022
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Document Number: 91000
