VS-20ETF04STRL-M3

VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Meets MSL level 1, per LF maximum peak of 245 °C • Designed and qualified JEDEC®-JESD 47 2 1 3 D2PAK (TO-263AB) 1 Anode - J-STD-020, according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 - Anode APPLICATIONS • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met PRIMARY CHARACTERISTICS IF(AV) 20 A VR 200 V, 400 V, 600 V VF at IF 1.3 V IFSM 300 A trr 60 ns TJ max. 150 °C DESCRIPTION Snap factor 0.6 Package D2PAK (TO-263AB) Circuit configuration Single The VS-20ETF..S-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 20 A Sinusoidal waveform VRRM 200 to 600 V IFSM 300 A VF 10 A, TJ = 25 °C 1.2 V trr 1 A, 100 A/μs 60 ns TJ Range -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-20ETF02S-M3 200 300 VS-20ETF04S-M3 400 500 VS-20ETF06S-M3 600 700 VOLTAGE RATINGS PART NUMBER 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 97 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 UNITS A A2s A2√s Revision: 16-Dec-2021 Document Number: 94886 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance TEST CONDITIONS VALUES 20 A, TJ = 25 °C 1.30 60 A, TJ = 25 °C 1.67 rt Threshold voltage VF(TO) Maximum reverse leakage current IRM UNITS V 12.5 mΩ TJ = 150 °C 0.9 V TJ = 25 °C 0.1 VR = rated VRRM TJ = 150 °C mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 100 A/μs 25 °C Typical VALUES UNITS 160 ns 10 A 1.25 μC IFM trr ta tb t dir dt Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance junction to ambient (PCB mount) TEST CONDITIONS TJ, TStg RthJC VALUES UNITS -40 to +150 °C DC operation 0.9 °C/W RthJA (1) 40 Approximate weight 2 g 0.07 oz. 20ETF02S Case style D2PAK (TO-263AB) Marking device 20ETF04S 20ETF06S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994 150 20ETF.. Series RthJC (DC) = 0.9 K/W 140 130 Ø 120 Conduction angle 110 100 90 30° 60° 90° 120° 180° 80 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 150 20ETF.. Series RthJC (DC) = 0.9 K/W 140 130 Ø Conduction period 120 110 30° 60° 100 90° 90 120° DC 180° 70 80 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 35 Revision: 16-Dec-2021 Document Number: 94886 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors 550 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø Conduction angle 10 5 20ETF.. Series TJ = 150 °C 5 10 15 20 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 20ETF.. Series 50 0.001 25 0.1 0.01 Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) DC 180° 120° 90° 60° 30° 40 35 30 25 20 RMS limit Ø 15 Conduction period 10 20ETF.. Series TJ = 150 °C 5 0 0 5 10 20 15 25 30 1000 100 TJ = 25 °C TJ = 150 °C 10 20ETF.. Series 1 35 0 1 3 2 4 5 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 4 - Forward Power Loss Characteristics Fig. 7 - Forward Voltage Drop Characteristics 300 0.20 At any rated load condition and with rated VRRM applied following surge. 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 20ETF.. Series TJ = 25 °C trr - Typical Reverse Recovery Time (µs) Peak Half Sine Wave Forward Current (A) 1 Average Forward Current (A) 45 Maximum Average Forward Power Loss (W) 450 100 0 0 Maximum non-repetitive surge current versus pulse train duration. 500 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 35 0.15 IFM = 30 A IFM = 20 A 0.10 IFM = 10 A IFM = 5 A 0.05 20ETF.. Series IFM = 1 A 50 0 1 10 100 0 200 400 600 800 1000 Number of Equal Amplitude Half Cycle Current Pulses (N) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Revision: 16-Dec-2021 Document Number: 94886 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors 10 0.5 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 0.1 IFM = 30 A 8 7 IFM = 20 A 6 5 4 IFM = 10 A 3 2 IFM = 5 A 1 IFM = 1 A 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 4.0 70 IFM = 30 A 20ETF.. Series TJ = 25 °C 3.0 IFM = 20 A 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A IFM = 1 A 0 200 400 600 800 IFM = 30 A 50 IFM = 20 A 40 IFM = 10 A 30 IFM = 5 A 20 10 0.5 0 20ETF.. Series TJ = 25 °C 60 Irr - Typical Reverse Recovery Current (A) 3.5 Qrr - Typical Reverse Recovery Charge (µC) 20ETF.. Series TJ = 150 °C 9 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) 20ETF.. Series TJ = 150 °C IFM = 1 A 0 0 1000 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C 100 Irr - Typical Reverse Recovery Current (A) 20ETF.. Series TJ = 150 °C IFM = 30 A 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C Revision: 16-Dec-2021 Document Number: 94886 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 ZthJC - Transient Thermal Impedance (K/W) www.vishay.com Vishay Semiconductors 10 Steady state value (DC operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 20ETF.. Series 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 E T F 06 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: TRL -M3 8 9 E = single 4 - Package: T = D2PAK (TO-263AB) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - 02 = 200 V 04 = 400 V 06 = 600 V None = tube TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free Revision: 16-Dec-2021 Document Number: 94886 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-20ETF02S-M3 50 Antistatic plastic tubes VS-20ETF02STRR-M3 800 13" diameter reel VS-20ETF02STRL-M3 800 13" diameter reel VS-20ETF04S-M3 50 Antistatic plastic tubes VS-20ETF04STRR-M3 800 13" diameter reel VS-20ETF04STRL-M3 800 13" diameter reel VS-20ETF06S-M3 50 Antistatic plastic tubes VS-20ETF06STRR-M3 800 13" diameter reel VS-20ETF06STRL-M3 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 16-Dec-2021 Document Number: 94886 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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