VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
Base
cathode
2
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
2
3
TO-220AC
1
1
Cathode
• Designed and qualified
JEDEC®-JESD 47
3
Anode
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
according
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
TO-220AC
IF(AV)
20 A
VR
200 V, 400 V, 600 V
VF at IF
1.3 V
IFSM
300 A
trr
60 ns
TJ max.
150 °C
Diode variation
Single die
Snap factor
0.6
DESCRIPTION
The VS-20ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
Range
IF(AV)
Sinusoidal waveform
VALUES
UNITS
200 to 600
V
20
A
300
IFSM
trr
1 A, 100 A/μs
60
VF
10 A, TJ = 25 °C
1.2
V
TJ
Range
-40 to +150
°C
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-20ETF02PbF, VS-20ETF02-M3
200
300
VS-20ETF04PbF, VS-20ETF04-M3
400
500
VS-20ETF06PbF, VS-20ETF06-M3
600
700
ns
VOLTAGE RATINGS
PART NUMBER
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
SYMBOL
IF(AV)
IFSM
Maximum I2t for fusing
I 2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 97 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 to 10 ms, no voltage reapplied
4420
UNITS
A
A2s
A2s
Revision: 11-Feb-16
Document Number: 94096
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
UNITS
1.3
V
12.5
m
0.9
V
0.1
VR = Rated VRRM
TJ = 150 °C
VALUES
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/μs
25 °C
Typical
VALUES
UNITS
160
ns
10
A
1.25
μC
IFM
trr
ta
tb
t
dir
dt
0.6
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.9
°C/W
62
Mounting surface, smooth and greased
Approximate weight
Mounting torque
VALUES
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Case style TO-220AC
20ETF02
20ETF04
20ETF06
Revision: 11-Feb-16
Document Number: 94096
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
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Vishay Semiconductors
45
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
Ø
Conduction angle
120
110
100
90
60° 90° 120° 180°
30°
80
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
70
DC
180°
120°
90°
60°
30°
40
35
30
25
RMS limit
20
Ø
Conduction period
15
10
20ETF.. Series
TJ = 150 °C
5
0
0
2
4
6
8
10 12 14 16 18 20 22
5
0
Average Forward Current (A)
25
30
35
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
At any rated load condition and with
rated VRRM applied following surge.
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
20
15
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
130
Ø
120
Conduction period
110
30°
60°
100
90°
90
120°
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
DC
180°
50
80
0
5
10
15
20
30
25
35
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
550
35
180°
120°
90°
60°
30°
30
25
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
10
20
RMS limit
Ø
15
Conduction angle
10
20ETF.. Series
TJ = 150 °C
5
0
5
10
15
20
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
450
25
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
0
Maximum non-repetitive surge current
versus pulse train duration.
50
0.001
20ETF.. Series
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94096
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
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Vishay Semiconductors
Instantaneous Forward Current (A)
1000
100
10
TJ = 25 °C
TJ = 150 °C
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
70
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
0.05
20ETF.. Series
TJ = 25 °C
60
Irr - Typical Reverse
Recovery Current (A)
trr - Typical Reverse
Recovery Time (µs)
20ETF.. Series
TJ = 25 °C
IFM = 5 A
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
IFM = 1 A
IFM = 1 A
0
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
0.5
100
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
0
Irr - Typical Reverse
Recovery Current (A)
20ETF.. Series
TJ = 150 °C
trr - Typical Reverse
Recovery Time (µs)
200
20ETF.. Series
TJ = 150 °C
80
IFM = 30 A
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 11-Feb-16
Document Number: 94096
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
10
4.0
3.0
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
0.5
IFM = 5 A
1
IFM = 1 A
IFM = 1 A
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
ZthJC - Transient Thermal Impedance (K/W)
20ETF.. Series
TJ = 150 °C
9
Qrr - Typical Reverse
Recovery Charge (µC)
3.5
Qrr - Typical Reverse
Recovery Charge (µC)
IFM = 30 A
20ETF.. Series
TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 11-Feb-16
Document Number: 94096
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
F
06
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration:
E = single diode
4
-
Package:
T = TO-220AC
5
-
Type of silicon:
F = fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit
02 = 200 V
04 = 400 V
06 = 600 V
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-20ETF02PbF
50
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-20ETF02-M3
50
1000
Antistatic plastic tube
VS-20ETF04PbF
50
1000
Antistatic plastic tube
VS-20ETF04-M3
50
1000
Antistatic plastic tube
VS-20ETF06PbF
50
1000
Antistatic plastic tube
VS-20ETF06-M3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95221
TO-220AC PbF
www.vishay.com/doc?95224
TO-220AC -M3
www.vishay.com/doc?95068
Revision: 11-Feb-16
Document Number: 94096
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
Q
3
D
D
L1
E
A1
C
Thermal pad
C
H1
D2
Detail B
(6)
2 x b2
2xb
Detail B
θ
D1
1
2
A
(6)
H1
(7)
(6) D
1
2 3
Lead tip
L3
C
E1
(6)
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
L4
L
c
e1
A
Conforms to JEDEC outline TO-220AC
View A - A
A2
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
A2
2.56
2.92
0.101
0.115
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
MILLIMETERS
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
E2
-
0.76
-
0.030
7
e
2.41
2.67
0.095
0.105
e1
4.88
5.28
0.192
0.208
4
H1
6.09
6.48
0.240
0.255
L
13.52
14.02
0.532
0.552
4
L1
3.32
3.82
0.131
0.150
c
0.36
0.61
0.014
0.024
L3
1.78
2.13
0.070
0.084
c1
0.36
0.56
0.014
0.022
4
L4
0.76
1.27
0.030
0.050
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.
90° to 93°
6, 7
2
2
90° to 93°
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221
Revision: 07-Mar-11
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www.vishay.com
1
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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VS-20ETF06PBF
