VS-20ETF06THM3
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
2
2
• Glass passivated pellet chip junction
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution
rectification
1
1
Cathode
3
3
Anode
for
reliable
AC
power
• High surge, low VF rugged blocking diode for DC charging
stations
2L TO-220AC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VR
600 V
VF at IF
1.3 V
• On-board and off-board EV/HEV battery chargers
IFSM
300 A
• Renewable energy inverters
trr
60 ns
TJ max.
150 °C
Snap factor
0.6
Package
2L TO-220AC
Circuit configuration
Single
APPLICATIONS
DESCRIPTION
The VS-20ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUES
UNITS
VRRM
Range
CHARACTERISTICS
600
V
IF(AV)
Sinusoidal waveform
20
A
300
IFSM
trr
1 A, 100 A/μs
60
ns
VF
10 A, TJ = 25 °C
1.2
V
TJ
Range
-40 to +150
°C
VRRM, MAXIMUM PEAK REVERSE
VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
600
700
5
VOLTAGE RATINGS
PART NUMBER
VS-20ETF06THM3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I 2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
VALUES
TC = 97 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 to 10 ms, no voltage reapplied
4420
UNITS
A
A2s
A2s
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VS-20ETF06THM3
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ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
VFM
rt
Threshold voltage
VF(TO)
Maximum reverse leakage current
IRM
TEST CONDITIONS
VALUES
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
V
12.5
m
0.9
V
0.1
VR = Rated VRRM
TJ = 150 °C
UNITS
1.3
mA
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Snap factor
S
TEST CONDITIONS
IF at 20 Apk
100 A/μs
25 °C
Typical
VALUES
UNITS
160
ns
10
A
1.25
μC
IFM
trr
ta
tb
t
dir
dt
Qrr
IRM(REC)
0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
DC operation
Marking device
UNITS
-40 to +150
°C
0.9
°C/W
62
Mounting surface, smooth, and greased
0.5
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
VALUES
Case style 2L TO-220AC
20ETF06TH
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45
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
130
Ø
Conduction angle
120
110
100
90
60° 90° 120° 180°
30°
80
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
70
DC
180°
120°
90°
60°
30°
40
35
30
25
RMS limit
20
Ø
Conduction period
15
10
20ETF.. Series
TJ = 150 °C
5
0
0
2
4
6
8
10 12 14 16 18 20 22
5
0
Average Forward Current (A)
25
30
35
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETF.. Series
RthJC (DC) = 0.9 K/W
140
At any rated load condition and with
rated VRRM applied following surge.
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
20
15
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
130
Ø
120
Conduction period
110
30°
60°
100
90°
90
120°
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
DC
180°
50
80
0
5
10
15
20
30
25
35
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 2 - Current Rating Characteristics
550
35
180°
120°
90°
60°
30°
30
25
500
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
10
20
RMS limit
Ø
15
Conduction angle
10
20ETF.. Series
TJ = 150 °C
5
0
5
10
15
20
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
450
25
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
400
350
300
250
200
150
100
0
Maximum non-repetitive surge current
versus pulse train duration.
50
0.001
20ETF.. Series
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Instantaneous Forward Current (A)
1000
100
10
TJ = 25 °C
TJ = 150 °C
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
70
0.15
IFM = 30 A
IFM = 20 A
0.10
IFM = 10 A
0.05
20ETF.. Series
TJ = 25 °C
60
Irr - Typical Reverse
Recovery Current (A)
trr - Typical Reverse
Recovery Time (µs)
20ETF.. Series
TJ = 25 °C
IFM = 5 A
IFM = 30 A
50
IFM = 20 A
40
IFM = 10 A
30
IFM = 5 A
20
10
IFM = 1 A
IFM = 1 A
0
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.5
100
0.4
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.3
0.2
0.1
0
Irr - Typical Reverse
Recovery Current (A)
20ETF.. Series
TJ = 150 °C
trr - Typical Reverse
Recovery Time (µs)
200
20ETF.. Series
TJ = 150 °C
80
IFM = 30 A
IFM = 20 A
60
IFM = 10 A
40
IFM = 5 A
20
IFM = 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 27-Mar-2019
Document Number: 96534
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10
4.0
3.0
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
IFM = 30 A
8
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
0.5
IFM = 5 A
1
IFM = 1 A
IFM = 1 A
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
ZthJC - Transient Thermal Impedance (K/W)
20ETF.. Series
TJ = 150 °C
9
Qrr - Typical Reverse
Recovery Charge (µC)
3.5
Qrr - Typical Reverse
Recovery Charge (µC)
IFM = 30 A
20ETF.. Series
TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
F
06
T
H
M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration:
E = 2L TO-220AC
4
-
Package:
T = TO-220
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
• None = TO-220AB
• T = True pin TO-220
8
-
H = AEC-Q101 qualified
9
-
Environmental digit:
06 = 600 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-20ETF06THM3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96069
Part marking information
www.vishay.com/doc?95391
Revision: 27-Mar-2019
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Outline Dimensions
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Vishay Semiconductors
TO-220AC 2L
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
A
Thermal pad
E
A1
Q
(6)
H1
(7)
(6) D
H1
D2 (6)
Detail B
D1
1
2
(2) L1
C
E1 (6)
1
2
L
D
C
Base metal
D
C
L1 (2)
A
b1, b3
(4)
Section C - C and D - D
View A - A
A2
Plating
c1 (4)
c
c
2 x b 2 x b2
Detail B
e1
(b, b2)
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
E2
-
0.76
A2
2.56
2.92
0.101
0.115
e1
4.88
5.28
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
-
0.030
7
0.192
0.208
H1
5.84
6.86
0.230
0.270
4
L
13.52
14.02
0.532
0.552
L1
3.32
3.82
0.131
0.150
4
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
c
0.36
0.61
0.014
0.024
c1
0.36
0.56
0.014
0.022
4
3
D
14.85
15.25
0.585
0.600
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480"
Revision: 14-Mar-2022
Document Number: 96069
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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