VS-20ETF08S-M3

VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base cathode + 2 • Glass passivated pellet chip junction • Designed and qualified JEDEC®-JESD 47 according • Meets MSL level 1, per LF maximum peak of 245 °C 2 1 3 D2PAK (TO-263AB) 1 Anode - to J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 - Anode APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 20 A • Output rectification and choppers and converters VR 800 V, 1000 V, 1200 V VF at IF 1.31 V IFSM 355 A freewheeling • Input rectifications where severe conducted EMI should be met in inverters, restrictions on DESCRIPTION trr 95 ns TJ max. 150 °C Snap factor 0.6 Package D2PAK (TO-263AB) Circuit configuration Single The VS-20ETF..S-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 20 A Sinusoidal waveform VRRM 800 to 1200 V IFSM 355 A VF 20 A, TJ = 25 °C trr 1 A, 100 A/μs TJ Range 1.31 V 95 ns -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 20ETF08S-M3 800 900 20ETF10S-M3 1000 1100 20ETF12S-M3 1200 1300 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t TEST CONDITIONS VALUES TC = 97 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 300 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 635 t = 0.1 ms to 10 ms, no voltage reapplied 6350 UNITS A A2s A2√s Revision: 17-Nov-2021 Document Number: 94887 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 11.88 mΩ 0.93 V 0.1 VR = rated VRRM TJ = 150 °C UNITS 1.31 mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 25 A/μs 25 °C Typical VALUES UNITS 400 ns 6.1 A 1.7 μC IFM trr ta tb t dir dt Qrr 0.6 IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC VALUES UNITS -40 to +150 °C DC operation 0.9 °C/W Maximum thermal resistance, junction to ambient (PCB mount) RthJA (1) 62 2 Approximate weight g 0.07 oz. 20ETF08S Case style D2PAK (TO-263AB) Marking device 20ETF10S 20ETF12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994 150 20ETF.. Series RthJC (DC) = 0.9 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 150 140 130 Ø Conduction angle 120 30° 60° 110 90° 120° 180° 20ETF.. Series RthJC (DC) = 0.9 K/W 140 Ø Conduction period 130 120 60° 110 30° 90° 120° 180° 100 DC 100 0 5 10 15 20 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 25 0 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Revision: 17-Nov-2021 Document Number: 94887 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors 350 180° 120° 90° 60° 30° 30 25 20 At any rated load condition and with rated VRRM applied following surge. 300 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 35 RMS limit 15 Ø 10 Conduction angle 5 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 20ETF.. Series TJ = 150 °C 20ETF.. Series 50 0 0 5 10 15 20 25 1 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 45 400 180° 120° 90° 60° 30° 40 35 30 DC 25 20 RMS limit 15 Ø Conduction period 10 250 200 150 100 20ETF.. Series 50 0.01 0 5 10 15 20 25 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 20ETF.. Series TJ = 150 °C 5 0 Maximum non-repetitive surge current versus pulse train duration. 350 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 10 35 30 0.1 Average Forward Current (A) Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 1 Fig. 6 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 25 °C TJ = 150 °C 10 20ETF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 17-Nov-2021 Document Number: 94887 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors 10 0.7 trr - Typical Reverse Recovery Time (µs) 0.6 0.5 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.4 IFM = 30 A 20ETF.. Series TJ = 150 °C Qrr - Typical Reverse Recovery Charge (µC) 20ETF.. Series TJ = 25 °C 0.3 0.2 8 IFM = 20 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0.1 0 0 0 50 100 150 0 200 Fig. 8 - Recovery Time Characteristics, TJ = 25 °C 150 200 Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 1.2 25 Irr - Typical Reverse Recovery Current (A) 20ETF.. Series TJ = 150 °C trr - Typical Reverse Recovery Time (µs) 100 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.6 0.3 0 20ETF.. Series TJ = 25 °C 20 IFM = 30 A IFM = 20 A IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 0 dI/dt - Rate of Fall of Forward Current (A/µs) 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C 6 35 IFM = 30 A 20ETF.. Series TJ = 25 °C 5 20ETF.. Series TJ = 150 °C 30 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A Irr - Typical Reverse Recovery Current (A) Qrr - Typical Reverse Recovery Charge (µC) 50 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C Revision: 17-Nov-2021 Document Number: 94887 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 ZthJC - Transient Thermal Impedance (K/W) www.vishay.com Vishay Semiconductors 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 20ETF.. Series 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 E T F 12 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - TRL -M3 8 9 Circuit configuration: E = single 4 - Package: T = D2PAK (TO-263AB) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - 08 = 800 V 10 = 1000 V 12 = 1200 V None = tube TRR = tape and reel (right oriented) 9 - TRL = tape and reel (left oriented) -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free Revision: 17-Nov-2021 Document Number: 94887 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION (Example) PREFERRED P/N BASSE QUANTITY VS-20ETF08S-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-20ETF08STRR-M3 800 13" diameter plastic tape and reel VS-20ETF08STRL-M3 800 13" diameter plastic tape and reel VS-20ETF10S-M3 50 Antistatic plastic tubes VS-20ETF10STRR-M3 800 13" diameter plastic tape and reel VS-20ETF10STRL-M3 800 13" diameter plastic tape and reel VS-20ETF12S-M3 50 Antistatic plastic tubes VS-20ETF12STRR-M3 800 13" diameter plastic tape and reel VS-20ETF12STRL-M3 800 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?96669 Revision: 17-Nov-2021 Document Number: 94887 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-20ETF12S-M3 VS-20ETF12STRR-M3 VS-20ETF10S-M3 VS-20ETF08STRR-M3 VS-20ETF08STRL-M3 VS20ETF10STRL-M3 VS-20ETF08S-M3 VS-20ETF10STRR-M3 VS-20ETF12STRL-M3