VS-20ETF12FP-M3

VS-20ETF10FP-M3, VS-20ETF12FP-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES • Glass passivated pellet chip junction • 150 °C max. operation junction temperature 1 Cathode 1 2 Anode 2 • Designed and qualified JEDEC®-JESD 47 according to • Fully isolated package (VINS = 2500 VRMS) • UL pending 2L TO-220 FullPAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 20 A VR 1000 V, 1200 V VF at IF 1.31 V IFSM 320 A trr 95 ns TJ max. 150 °C Snap factor 0.6 Package 2L TO-220 FullPAK Circuit configuration Single APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-20ETF...FP... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.  The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform IFSM VALUES UNITS 1000, 1200 V 20 320 trr 1 A, 100 A/μs VF 20 A, TJ = 25 °C TJ Range 95 A ns 1.31 V -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-20ETF10FP-M3 1000 1100 VS-20ETF12FP-M3 1200 1300 VOLTAGE RATINGS PART NUMBER 6 Revision: 15-Sep-17 Document Number: 96297 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF10FP-M3, VS-20ETF12FP-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current Maximum peak one cycle non-repetitive surge current IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 50 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 270 10 ms sine pulse, no voltage reapplied 320 UNITS A 10 ms sine pulse, rated VRRM applied 365 10 ms sine pulse, no voltage reapplied 515 t = 0.1 ms to 10 ms, no voltage reapplied 5150 A2s VALUES UNITS 1.31 V 11.88 m 0.93 V A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.1 VR = Rated VRRM TJ = 150 °C mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 25 A/μs 25 °C Typical VALUES UNITS 400 ns 6.1 A 1.7 IFM trr ta tb t dir dt μC Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation VALUES UNITS -40 to +150 °C 2.5 62 Mounting surface, smooth, and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Marking device Case style 2L TO-220 FullPAK 20ETF10FP 20ETF12FP Revision: 15-Sep-17 Document Number: 96297 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF10FP-M3, VS-20ETF12FP-M3 Vishay Semiconductors 160 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 120 80 40 60° 30° 90° 120° 180° 0 0 4 8 12 16 20 Average Forward Current (A) 35 25 20 RMS limit 15 0 0 90° DC 20 25 30 0 0 5 10 15 35 300 550 Average Forward Current (A) Maximum Average Forward Power Loss (W) Fig. 2 - Current Rating Characteristics 35 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction angle 5 TJ = 150 °C 0 0 5 10 15 20 5 10 20 15 25 Average Forward Current (A) Peak Half Sine Wave Forward Current (A) 60° 180° TJ = 150 °C 5 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 100 120° Conduction period Fig. 4 - Forward Power Loss Characteristics 150 30° Ø 10 Fig. 1 - Current Rating Characteristics 50 180° 120° 90° 60° 30° 30 25 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics At any rated load condition and with rated VRRM applied following surge. 250 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 150 100 50 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 500 Maximum non-repetitive surge current versus pulse train duration. 450 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 400 350 300 250 200 150 100 50 0.001 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 15-Sep-17 Document Number: 96297 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF10FP-M3, VS-20ETF12FP-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 0.7 0.6 IFM = 30 A IFM = 20 A IFM = 10 A 0.5 IFM = 5 A IFM = 1 A 0.4 0.3 0.2 0.1 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Qrr - Typical Reverse Recovery Charge (µC) trr - Typical ReverseRecovery Time (µs) Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 1.2 TJ = 150 °C 0.9 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.6 0.3 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C IFM = 30 A TJ = 25 °C 5 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 IFM = 1 A 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Qrr - Typical ReverseRecovery Charge (µC) trr - Typical Reverse Recovery Time (µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C 6 10 IFM = 30 A TJ = 150 °C 8 IFM = 20 A 6 IFM = 10 A 4 IFM = 5 A 2 IFM = 1 A 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 15-Sep-17 Document Number: 96297 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF10FP-M3, VS-20ETF12FP-M3 Vishay Semiconductors Irr - Typical Reverse Recovery Current (A) 25 IFM = 30 A TJ = 25 °C IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 35 TJ = 150 °C IFM = 30 A 30 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) Irr - Typical Reverse Recovery Current (A) www.vishay.com 10 D = 0.5 D = 0.2 1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.1 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 15-Sep-17 Document Number: 96297 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETF10FP-M3, VS-20ETF12FP-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T F 12 FP -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: E = single diode 4 - 5 - Package: T = TO-220 Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - FullPAK 8 - Environmental digit: 10 = 1000 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETF10FP-M3 50 1000 Antistatic plastic tubes VS-20ETF12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96157 Part marking information www.vishay.com/doc?95392 Revision: 15-Sep-17 Document Number: 96297 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220 FullPAK DIMENSIONS in millimeters 3.40 Hole Ø 3.10 10.6 10.0 3.7 3.2 2.80 2.44 7.31 6.50 16.0 15.8 Mold flash bleeding 3.3 3.1 Exposed Cu 13.56 12.90 2.54 TYP. 0.61 0.38 0.9 0.7 2.85 2.65 1.20 1.47 1.30 1.05 2.54 TYP. Bottom view R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Revision: 06-Jul-17 Document Number: 96157 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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