VS-20ETS..-M3, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 20 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
2
• Glass passivated pellet chip junction
1
1
3
TO-220AC 2L
2
3
• Designed
and
JEDEC®-JESD 47
TO-220AB 3L
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode to
base
2
Base
cathode
2
qualified
APPLICATIONS
• Input rectification
1
Cathode
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
3
Anode
1
Anode
VS-20ETS..
3
Anode
DESCRIPTION
VS-20ATS..
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
PRIMARY CHARACTERISTICS
These devices are intended for use in main rectification
(single or three phase bridge).
IF(AV)
20 A
VR
800 V, 1200 V
VF at IF
1.1 V
IFSM
300 A
TJ max.
150 °C
Package
TO-220AC 2L, TO-220AB 3L
Circuit configuration
Single, common anode
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
16.3
21
A
CHARACTERISTICS
VALUES
UNITS
20
A
800, 1200
V
300
A
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
Sinusoidal waveform
VRRM
IFSM
VF
10 A, TJ = 25 °C
TJ
1.0
V
-40 to +150
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VS-20ETS08-M3, VS-20ATS08-M3
800
900
VS-20ETS12-M3, VS-20ATS12-M3
1200
1300
1
Revision: 29-Nov-2021
Document Number: 96244
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..-M3, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
IF(AV)
TC = 105 °C, 180° conduction half sine wave
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
316
10 ms sine pulse, no voltage reapplied
442
t = 0.1 ms to 10 ms, no voltage reapplied
4420
A2√s
VALUES
UNITS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
I 2t
Maximum I2√t for fusing
I2√t
VALUES
UNITS
A
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
VFM
Maximum forward voltage drop
rt
Forward slope resistance
VF(TO)
Threshold voltage
IRM
Maximum reverse leakage current
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
1.1
V
10.4
mΩ
0.85
V
0.1
VR = Rated VRRM
TJ = 150 °C
mA
1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
-40 to +150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.3
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, and greased
0.5
°C/W
2
Approximate weight
Mounting torque
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
20ETS08
Case style TO-220AC 2L
20ETS12
Marking device
20ATS08
Case style TO-220AB 3L
150
20ATS12
150
RthJC (DC) = 1.3 °C/W
140
Ø
130
Conduction angle
120
110
100
30°
60°
90° 120°
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
RthJC (DC) = 1.3 °C/W
140
130
Ø
Conduction period
120
30°
110
60°
90°
100
120°
180°
180°
DC
90
90
0
2
4
6
8
10 12 14 16 18 20 22
0
5
10
15
20
25
30
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
35
Revision: 29-Nov-2021
Document Number: 96244
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..-M3, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
300
180°
120°
90°
60°
30°
25
20
Peak Half Sine Wave
Forward Current (A)
Maxiumum Average Forward
Power Loss (W)
30
RMS limit
15
10
Ø
Conduction angle
5
250
200
150
100
TJ = 150 °C
50
0
0
4
8
12
16
20
1
24
10
100
Average Forward Current (A)
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
35
300
DC
180°
120°
90°
60°
30°
30
25
Peak Half Sine Wave
Forward Current (A)
Maxiumum Average Forward
Power Loss (W)
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20
RMS limit
15
10
Ø
Conduction period
5
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
TJ = 150 °C
50
0
0
5
10
15
20
0.1
0.01
25
1
Pulse Train Duration (s)
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
Average Forward Current (A)
1000
TJ = 25 °C
TJ = 150 °C
100
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 29-Nov-2021
Document Number: 96244
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20ETS..-M3, VS-20ATS..-M3
www.vishay.com
Vishay Semiconductors
ZthJC - Transient Thermal
Impedance (°C/W)
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
20
E
T
S
12
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Circuit configuration:
E = 2L TO-220AC
A = 3L TO-220AB
4
-
Package:
T = TO-220
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
Environmental digit:
08 = 800 V
12 = 1200 V
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
50
Antistatic plastic tubes
VS-20ATS08-M3
VS-20ATS12-M3
50
Antistatic plastic tubes
VS-20ETS08-M3
50
Antistatic plastic tubes
VS-20ETS12-M3
50
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
2L TO-220AC
www.vishay.com/doc?96156
3L TO-220AB
www.vishay.com/doc?96154
2L TO-220AC
www.vishay.com/doc?95391
3L TO-220AB
www.vishay.com/doc?95028
www.vishay.com/doc?96046
Revision: 29-Nov-2021
Document Number: 96244
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
3L TO-220AB
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
D
(H1)
H1
C
D2
(6) D
2 3
D
L1 (2)
C
(6)
c
3xb
D1
3 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96154
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
(H1)
H1
C
D2
(6) D
2
D
D
L1 (2)
C
(6)
c
2xb
D1
2 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AC
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96156
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1
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