VS-20ETS12-M3

VS-20ETS..-M3, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Glass passivated pellet chip junction 1 1 • Designed and JEDEC®-JESD 47 2 3 3 2L TO-220AC 3L TO-220AB according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode to base 2 Base cathode 2 qualified APPLICATIONS • Input rectification 1 Cathode • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines 3 Anode 1 Anode VS-20ETS.. 3 Anode DESCRIPTION VS-20ATS.. High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. PRIMARY CHARACTERISTICS IF(AV) 20 A VR 800 V, 1200 V VF at IF 1.1 V IFSM 300 A These devices are intended for use in main rectification (single or three phase bridge).    TJ max. 150 °C Package 2L TO-220AC, 3L TO-220AB Circuit configuration Single, common anode OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A CHARACTERISTICS VALUES UNITS 20 A Capacitive input filter TA = 55 °C, TJ = 125 °C  common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM 800, 1200 V IFSM 300 A 1.0 V -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-20ETS08-M3, VS-20ATS08-M3 800 900 VS-20ETS12-M3, VS-20ATS12-M3 1200 1300 VF 10 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER 1 Revision: 23-Nov-17 Document Number: 96244 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..-M3, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 20 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I 2t Maximum I2t for fusing I2t UNITS 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s VALUES UNITS 1.1 V 10.4 m 0.85 V A A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 0.1 VR = Rated VRRM TJ = 150 °C mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -40 to +150 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation 1.3 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth, and greased 0.5 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque 20ETS08 Case style 2L TO-220AC 20ETS12 Marking device 20ATS08 Case style 3L TO-220AB 150 20ATS12 150 RthJC (DC) = 1.3 °C/W 140 Ø 130 Conduction angle 120 110 100 30° 60° 90° 120° Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) RthJC (DC) = 1.3 °C/W 140 130 Ø Conduction period 120 30° 110 60° 90° 100 120° 180° 180° DC 90 90 0 2 4 6 8 10 12 14 16 18 20 22 0 5 10 15 20 25 30 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 35 Revision: 23-Nov-17 Document Number: 96244 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..-M3, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors 300 180° 120° 90° 60° 30° 25 20 Peak Half Sine Wave Forward Current (A) Maxiumum Average Forward Power Loss (W) 30 RMS limit 15 10 Ø Conduction angle 5 250 200 150 100 TJ = 150 °C 50 0 0 4 8 12 16 20 1 24 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 35 300 DC 180° 120° 90° 60° 30° 30 25 Peak Half Sine Wave Forward Current (A) Maxiumum Average Forward Power Loss (W) At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 20 RMS limit 15 10 Ø Conduction period 5 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 250 200 150 100 TJ = 150 °C 50 0 0 5 10 15 20 0.1 0.01 25 1 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 TJ = 25 °C TJ = 150 °C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 23-Nov-17 Document Number: 96244 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..-M3, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: E = 2L TO-220AC A = 3L TO-220AB 4 - 5 - Package: T = TO-220 Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 08 = 800 V 12 = 1200 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETS08-M3 50 1000 Antistatic plastic tubes VS-20ATS08-M3 50 1000 Antistatic plastic tubes VS-20ETS12-M3 50 1000 Antistatic plastic tubes VS-20ATS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model 2L TO-220AC www.vishay.com/doc?96156 3L TO-220AB www.vishay.com/doc?96154 2L TO-220AC www.vishay.com/doc?95391 3L TO-220AB www.vishay.com/doc?95028 www.vishay.com/doc?96046 Revision: 23-Nov-17 Document Number: 96244 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 3L TO-220AB DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 D (H1) H1 C D2 (6) D 2 3 D L1 (2) C (6) c 3xb D1 3 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96154 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M (6) E A ØP Q B A (6) (E) A1 Thermal pad 1 (H1) H1 C D2 (6) D 2 D D L1 (2) C (6) c 2xb D1 2 x b2 Detail B Detail B A2 L E1 (6) C (b, b2) Base metal A c1 (4) c 2x e Plating View A - A e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AC SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.50 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.35 8.38 9.02 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.098 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.604 0.330 0.355 NOTES 4 4 4 3 SYMBOL D2 E E1 e e1 H1 L L1 ØP Q MILLIMETERS MIN. MAX. 11.68 13.30 10.11 10.51 6.86 8.89 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.91 2.60 3.00 INCHES MIN. MAX. 0.460 0.524 0.398 0.414 0.270 0.350 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.154 0.102 0.118 NOTES 6, 7 3, 6 6 6 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2, and E1 (7) Outline conforms to JEDEC® TO-220, except D2 Revision: 13-Jun-2019 Document Number: 96156 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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