VS-20ETS12FPPBF

VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature 2 • Glass passivated pellet chip junction • Designed and qualified JEDEC®-JESD 47 2 3 1 TO-220 FULL-PAK to • Fully isolated package (VINS = 2500 VRMS) 3 1 according Cathode Anode Available • UL E78996 approved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY APPLICATIONS Package TO-220FP IF(AV) 20 A • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VR 800 V to 1200 V VF at IF 1.1 V DESCRIPTION IFSM 300 A TJ max. 150 °C High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. Diode variation Single die These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 18 22 A VALUES UNITS 20 A Capacitive input filter TA = 55 °C, TJ = 125 °C  common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 10 A, TJ = 25 °C TJ 800/1200 V 300 A 1.0 V -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-20ETS08FPPbF, VS-20ETS08FP-M3 800 900 VS-20ETS12FPPbF, VS-20ETS12FP-M3 1200 1300 IRRM AT 150 °C mA 1 Revision: 12-Feb-16 Document Number: 94339 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL IF(AV) Maximum average forward current Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 51 °C, 180° conduction half sine wave 20 10 ms sine pulse, rated VRRM applied 250 UNITS A 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s VALUES UNITS 1.1 V 10.4 m 0.85 V A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 20 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C VR = Rated VRRM TJ = 150 °C 0.1 1.0 mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 2.8 62 Mounting surface, smooth, and greased °C/W 0.5 2 g 0.07 oz. minimum 6.0 (5.0) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220 FULL-PAK 20ETS08FP 20ETS12FP Revision: 12-Feb-16 Document Number: 94339 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series www.vishay.com Vishay Semiconductors 35 150 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) VS-20ETS.. Series 125 100 Ø Conduction angle 180° 120° 90° 60° 30° 75 50 DC 180° 120° 90° 60° 30° 30 25 20 RMS limit 15 Ø 10 Conduction period 5 VS-20ETS.. Series TJ = 150 °C 0 25 0 4 8 12 16 20 0 24 Maximum Allowable Case Temperature (°C) 150 VS-20ETS.. Series 125 Ø Conduction period 360° 180° 120° 90° 60° 30° 50 25 0 5 10 15 20 25 30 35 Maximum Average Forward Power Loss (W) 25 20 RMS limit 15 10 Ø Conduction angle VS-20ETS.. Series TJ = 150 °C 5 0 0 4 8 12 16 20 25 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 VS-20ETS.. Series 50 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 24 Peak Half Sine Wave Forward Current (A) Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 20 300 Average Forward Current (A) 30 15 Fig. 4 - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) Fig. 1 - Current Rating Characteristics 75 10 Average Forward Current (A) Average Forward Current (A) 100 5 300 250 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 200 150 100 VS-20ETS.. Series 50 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 12-Feb-16 Document Number: 94339 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series www.vishay.com Vishay Semiconductors 1000 IF - Instantaneous Forward Current (A) TJ = 25 °C 100 TJ = 150 °C 10 VS-20ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse (thermal resistance) 0.1 0.0001 0.001 0.01 0.1 VS-20ETS.. Series 1 10 100 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 12-Feb-16 Document Number: 94339 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..FPPbF Series, VS-20ETS..FP-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 FP PbF 1 2 3 4 5 6 7 8 1 2 - Vishay Semiconductors product Current rating (20 = 20 A) Circuit configuration: E = single diode 3 - Package: T = TO-220 4 - Type of silicon: S = standard recovery rectifier 5 6 - Voltage ratings 7 - FULL-PAK 8 - 08 = 800 V 12 = 1200 V Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETS08FPPbF 50 1000 Antistatic plastic tubes VS-20ETS08FP-M3 50 1000 Antistatic plastic tubes VS-20ETS12FPPbF 50 1000 Antistatic plastic tubes VS-20ETS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95005 TO-220 FP PbF www.vishay.com/doc?95009 TO-220 FP -M3 www.vishay.com/doc?95440 Revision: 12-Feb-16 Document Number: 94339 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000