VS-20L15T-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultra low forward voltage drop
1
Cathode
3
Anode
2L TO-220AC
• Guard ring for enhanced ruggedness and
long term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Designed and qualified according to JEDEC®-JESD 47
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IF(AV)
20 A
VR
15 V
VF at IF
See Electrical table
IRM max.
600 mA at 100 °C
TJ max.
125 °C
EAS
10 mJ
Package
2L TO-220AC
Circuit configuration
Single
DESCRIPTION
The Schottky rectifier module has been optimized for
ultra low forward voltage drop specifically for the
OR-ing of parallel power supplies. The proprietary
barrier
technology allows for reliable operation up to
125 °C junction temperature. Typical applications are in
parallel switching power supplies, converters, reverse
battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
VALUES
UNITS
Rectangular waveform
CHARACTERISTICS
20
A
15
V
IFSM
tp = 5 μs sine
700
A
VF
19 Apk, TJ = 125 °C (typical)
0.25
V
TJ
Range
-55 to +125
°C
SYMBOL
IF(AV)
VRRM
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-20L15T-M3
UNITS
15
V
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 85 °C, rectangular waveform
20
5 µs sine or 3 µs rect. pulse
700
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
UNITS
A
330
EAS
TJ = 25 °C, IAS = 2 A, L = 6 mH
10
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
A
Revision: 23-Nov-17
Document Number: 96291
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VS-20L15T-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
19 A
Forward voltage drop
VFM (1)
See fig. 1
TJ = 25 °C
40 A
19 A
TJ = 125 °C
40 A
Reverse leakage current
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
VR = Rated VR
TJ = 100 °C
TYP.
MAX.
-
0.41
-
0.52
0.25
0.33
0.37
0.50
-
10
-
600
TJ = TJ max.
UNITS
V
mA
0.182
V
7.6
m
Forward slope resistance
rt
Maximum junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
-
2000
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
8
-
nH
Maximum voltage rate of change
dV/dt
Rated VR
10 000
V/µs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum junction temperature range
TJ
-55 to +125
Maximum storage temperature range
TStg
-50 to +150
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(for TO-220)
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
(for D2PAK)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style 2L TO-220AC
UNITS
°C
1.5
0.50
°C/W
40
2
g
0.07
oz.
6 (5)
kgf ·cm
(lbf · in)
12 (10)
20L15T
Revision: 23-Nov-17
Document Number: 96291
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20L15T-M3
Vishay Semiconductors
1000
1000
100
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
10
TJ = 100 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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100
TJ = 75 °C
TJ = 50 °C
10
TJ = 25 °C
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3
0
1.6
6
9
12
15
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1600
1500
1400
1300
1200
1100
1000
900
5
6
7
8
9
10
11
12
13
14
15
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 23-Nov-17
Document Number: 96291
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VS-20L15T-M3
Vishay Semiconductors
100
14
95
12
Average Power Loss (W)
Allowable Case Temperature (°C)
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90
Square wave (D = 0.50)
85
80
75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
8
RMS limit
6
4
DC
2
See note (1)
0
70
0
4
8
12
16
20
24
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition and
with rated VRRM applied
following surge
100
10
100
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 23-Nov-17
Document Number: 96291
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20L15T-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
L
15
T
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (20 = 20 A)
3
-
Schottky “L” series
4
-
Voltage code (15 = 15 V)
5
-
Package
T = TO-220
6
-
Environmental digit
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-20L15T-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96156
Part marking information
www.vishay.com/doc?95391
Revision: 23-Nov-17
Document Number: 96291
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
A
0.014 M B A M
(6)
E
A
ØP
Q
B
A
(6)
(E)
A1
Thermal pad
1
(H1)
H1
C
D2
(6) D
2
D
D
L1 (2)
C
(6)
c
2xb
D1
2 x b2
Detail B
Detail B
A2
L
E1 (6)
C
(b, b2)
Base metal
A
c1 (4)
c
2x e
Plating
View A - A
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AC
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
4
4
4
3
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96156
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Document Number: 91000