VS-20MQ060HM3/5AT

VS-20MQ060HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation SMA (DO-214AC) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2A • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VR 60 V VF at IF 0.68 V IRM 7.5 mA at 125 °C TJ max. 150 °C EAS 2.0 mJ Package SMA (DO-214AC) Circuit configuration Single DESCRIPTION The VS-20MQ060HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 2 Apk, TJ = 125 °C TJ Range VALUES UNITS 2 A 60 V 40 A 0.68 V -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-20MQ060HM3 UNITS 60 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES 50 % duty cycle at TL = 107 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2.1 50 % duty cycle at TL = 110 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2 5 μs sine or 3 μs rect. pulse 40 UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 10 A Revision: 30-May-2018 Document Number: 94839 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ060HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 2A VFM (1) TJ = 25 °C 0.63 2A 0.68 TJ = 125 °C 1A IRM Threshold voltage VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt 0.71 1A 1.5 A Maximum reverse leakage current See fig. 2 UNITS 0.78 1.5 A Maximum forward voltage drop See fig. 1 VALUES V 0.63 0.57 TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR 0.5 mA 7.5 0.45 V 86.8 mΩ 31 pF 2.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C 80 °C/W Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to ambient SYMBOL TJ (1), TEST CONDITIONS TStg RthJA DC operation Approximate weight Marking device Case style SMA (DO-214AC) 0.07 g 0.002 oz. 2H Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 30-May-2018 Document Number: 94839 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ060HM3 IF - Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.2 150 140 130 0.4 0.6 0.8 1.0 1.2 1.4 100 90 80 70 Square wave (D = 0.50) Rated VR applied 60 See note (1) 1.6 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IF(AV) - Average Forward Current (A) 93408_04 Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 1.4 100 TJ = 150 °C 10 1 Average Power Loss (W) IR - Reverse Current (mA) D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 Fig. 1 - Maximum Forward Voltage Drop Characteristics TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C 0.001 TJ = 25 °C RMS limit 1.2 1.0 0.8 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 0.6 0.4 0.2 0.0001 0 0 10 20 30 40 50 0 60 VR - Reverse Voltage (V) 93408_02 TJ = 25 °C 10 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0.8 1.2 1.6 2.0 2.4 Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) 100 0.4 IF(AV) - Average Forward Current (A) 93408_05 Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage 93408_03 DC 120 50 VFM - Forward Voltage Drop (V) 93408_01 160 100 93408_06 At any rated load condition and with rated VRRM applied following surge 10 1 10 100 1000 10 000 tp - Square Wave Pulse Duration (μs) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 30-May-2018 Document Number: 94839 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ060HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 M Q 060 H M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - H = AEC-Q101 qualified 7 - Environmental digit: M3 = Halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel VS-20MQ060HM3/5AT LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 30-May-2018 Document Number: 94839 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMA DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode band Mounting Pad Layout 0.074 (1.88) MAX. 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.066 (1.68) MIN. 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 95400 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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