VS-20MQ100NTRPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 A
FEATURES
• Small foot print, surface mountable
Cathode
Anode
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
SMA (DO-214AC)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
LINKS TO ADDITIONAL RESOURCES
• Designed and qualified for industrial level
3D 3D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D Models
DESCRIPTION
PRIMARY CHARACTERISTICS
IF(AV)
2A
VR
100 V
VF at IF
0.72 V
IRM max.
1 mA at 125 °C
TJ max.
150 °C
The VS-20MQ100NTRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards.
Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
EAS
1.0 mJ
Package
SMA (DO-214AC)
Circuit configuration
Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
2
A
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
2 Apk, TJ = 125 °C
TJ
Range
100
V
120
A
0.72
V
-55 to +150
°C
VS-20MQ100NTRPbF
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 113 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
2.1
50 % duty cycle at TC = 116 °C, rectangular waveform
On PC board 9 mm2 island (0.013 mm thick copper pad area)
2
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
Following any rated
load condition and with
rated VRRM applied
UNITS
A
120
30
A
1.0
mJ
0.5
A
Revision: 19-Nov-2019
Document Number: 94591
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20MQ100NTRPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
2A
TJ = 25 °C
1.5 A
Maximum forward voltage drop
See fig. 1
VFM (1)
0.85
1A
0.78
2A
0.72
TJ = 125 °C
1.5 A
IRM (1)
Threshold voltage
VF(TO)
V
0.68
1A
Maximum reverse leakage current
See fig. 2
UNITS
0.91
0.63
TJ = 25 °C
0.1
VR = Rated VR
TJ = 125 °C
mA
1
TJ = TJ maximum
0.52
V
78.4
mΩ
Forward slope resistance
rt
Typical junction capacitance
CT
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz
38
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
80
°C/W
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
Approximate weight
Marking device
0.07
g
0.002
oz.
Case style SMA (DO-214AC) (similar D-64)
2J
Note
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
1
10
TJ = 150 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.4
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
(1)
125 °C
0.1
100 °C
0.01
75 °C
0.001
50 °C
0.0001
25 °C
0
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Revision: 19-Nov-2019
Document Number: 94591
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20MQ100NTRPbF
www.vishay.com
Vishay Semiconductors
Average Forward Power Loss (W)
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
1
0
20
40
60
80
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
2.5
2
1.5
1
0.5
0
100
0
150
140
130
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
90
Square wave (D = 0.50)
rated VR applied
80
70
see note (1)
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IFSM - Non-Repetitive Surge Current (A)
Allowable Case Temperature (°C)
160
100
1
1.5
2
2.5
3
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
110
0.5
IF(AV) - Average Forward Current (A)
VR - Reverse Voltage (V)
120
DC
RMS Limit
100
TJ = 25 ˚C
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
10
10
100
1000
10 000
IF(AV) - Average Forward Current (A)
tp - Square Wave Pulse Duration (μs)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 19-Nov-2019
Document Number: 94591
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20MQ100NTRPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
20
M
Q
100
N
TR
PbF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
M = SMA
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
N = new SMA
7
-
TR = tape and reel (7500 pieces)
8
-
PbF = lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-20MQ100NTRPbF
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5AT
7500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95400
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?97121
Revision: 19-Nov-2019
Document Number: 94591
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2023
1
Document Number: 91000
