VS-20TQ035STRR-M3

VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES Base cathode 2 • • • • 150 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 1 1 N/C 3 D2PAK (TO-263AB) 3 Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D Models DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 20 A VR 35 V, 40 V, 45 V VF at IF 0.51 V IRM typ. 105 mA at 125 °C TJ max. 150 °C EAS Package The VS-20TQ... Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MECHANICAL DATA 27 mJ D2PAK Circuit configuration (TO-263AB) Case: D2PAK (TO-268AB) Molding compound meets UL 94-V0 flammability rating Single Terminals: J-STD-002 matte tin plated leads, solderable per MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C TJ Range VALUES UNITS 20 A 35 to 45 V 1800 A 0.51 V -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-20TQ035S-M3 VS-20TQ040S-M3 VS-20TQ045S-M3 UNITS 35 40 45 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current, see fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 4 A, L = 3.40 mH 27 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 4 A Repetitive avalanche current 50 % duty cycle at TC = 116 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 20 1800 A 400 Revision: 21-Dec-2021 Document Number: 94931 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop See fig. 1 VFM (1) VALUES TJ = 25 °C 40 A 20 A 0.73 TJ = 25 °C 0.67 2.7 Maximum reverse leakage current IRM (1) Typical reverse leakage current IRM (1) Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt VR = Rated VR TJ = 125 °C TJ = 125 °C V 0.51 TJ = 125 °C 40 A UNITS 0.57 mA 150 VR = Rated VR 105 mA 1400 pF 8.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 1.50 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.50 °C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf ⋅ cm (lbf ⋅ in) Approximate weight Mounting torque 1000 IR - Reverse Current (mA) 1000 IF - Instantaneous Forward Current (A) 20TQ035S 20TQ040S 20TQ045S Case style D2PAK (TO-263AB) Marking device 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0.1 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C 1 TJ = 75 °C TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Dec-2021 Document Number: 94931 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 100 0 10 20 30 50 40 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 t1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 10 1 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 18 D = 0.08 D = 0.17 D = 0.25 D = 0.33 D = 0.50 16 20TQ RthJC (DC) = 1.50 °C/W Average Power Loss (W) Allowable Case Temperature (°C) 155 145 135 DC 125 14 12 10 RMS limit 8 6 DC 4 2 0 115 0 5 10 15 20 25 30 0 5 10 15 20 25 30 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 21-Dec-2021 Document Number: 94931 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit ORDERING INFORMATION TABLE Device code VS- 20 T Q 045 S 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (20 A) 3 - Package: T = TO-220 4 - Schottky “Q” series 5 - Voltage ratings 6 - S = D2PAK 7 - TRL -M3 7 8 035 = 35 V 040 = 40 V 045 = 45 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free Revision: 21-Dec-2021 Document Number: 94931 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION PREFERRED P/N BASE QUANTITY VS-20TQ035S-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-20TQ035STRL-M3 800 13" diameter plastic tape and reel VS-20TQ035STRR-M3 800 13" diameter plastic tape and reel VS-20TQ040S-M3 50 Antistatic plastic tubes VS-20TQ040STRL-M3 800 13" diameter plastic tape and reel VS-20TQ040STRR-M3 800 13" diameter plastic tape and reel VS-20TQ045S-M3 50 Antistatic plastic tubes VS-20TQ045STRL-M3 800 13" diameter plastic tape and reel VS-20TQ045STRR-M3 800 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 SPICE model www.vishay.com/doc?96917 Revision: 21-Dec-2021 Document Number: 94931 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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