VS-22RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
• Metric threads version available
TO-48 (TO-208AA)
• Types up to 1200 V VDRM/VRRM
• Designed and qualified for industrial and consumer level
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IT(AV)
22 A
VDRM/VRRM
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
VTM
1.70 V
IGT
60 mA
TJ
-65 °C to +125 °C
Package
TO-48 (TO-208AA)
Circuit configuration
Single SCR
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
ITSM
I2t
UNITS
22
A
85
°C
35
A
50 Hz
400
60 Hz
420
50 Hz
793
60 Hz
724
VDRM/VRRM
tq
VALUES
Typical
TJ
A
A2s
100 to 1200
V
110
μs
-65 to +125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-22RIA
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE (1)
V
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
PEAK VOLTAGE (2)
AT TJ = TJ MAXIMUM
mA
V
10
100
150
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
20
10
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2) For voltage pulses with t 5 ms
p
Revision: 21-Sep-17
Document Number: 93700
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VS-22RIA Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
TEST CONDITIONS
180° sinusoidal conduction
IT(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
VALUES
UNITS
22
A
85
°C
35
A
No voltage
reapplied
400
100 % VRRM
reapplied
335
No voltage
reapplied
420
Sinusoidal half wave,
initial TJ =TJ maximum
100 % VRRM
reapplied
A
355
793
724
560
A2s
515
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
7930
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.83
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.95
Low level value of
on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
14.9
High level value of
on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
13.4
Ipk = 70 A, TJ = 25 °C
1.70
A2s
V
m
Maximum on-state voltage
VTM
Maximum holding current
IH
Latching current
IL
TJ = 25 °C, anode supply 6 V, resistive load
130
200
V
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VDRM 600 V
Maximum rate of rise
of turned-on current
VDRM 800 V
VDRM 1000 V
Typical reverse recovery time
Typical turn-off time
UNITS
200
dI/dt
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
VDRM 1600 V
Typical turn-on time
VALUES
180
160
A/μs
150
tgt
TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C
0.9
trr
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,
dI/dt = - 10 A/μs
4
tq
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
μs
110
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
VALUES
TJ = TJ maximum linear to 100 % rated VDRM
100
TJ = TJ maximum linear to 67 % rated VDRM
300 (1)
UNITS
V/μs
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
Revision: 21-Sep-17
Document Number: 93700
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
TEST CONDITIONS
VALUES
8.0
TJ = TJ maximum
2.0
UNITS
W
Maximum peak positive gate current
IGM
TJ = TJ maximum
1.5
A
Maximum peak negative gate voltage
-VGM
TJ = TJ maximum
10
V
TJ = - 65 °C
90
DC gate current required to trigger
IGT
TJ = 25 °C
TJ = 125 °C
TJ = - 65 °C
DC gate voltage required to trigger
VGT
TJ = 25 °C
60
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
3.0
2.0
TJ = 125 °C
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
V
1.0
TJ = TJ maximum, VDRM = Rated value
TJ = TJ maximum,
VDRM = Rated value
mA
35
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
2.0
mA
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-65 to +125
°C
Maximum operating junction
and storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.86
Maximum thermal resistance,
case to heat sink
RthCS
Mounting surface, smooth, flat and greased
0.35
K/W
Lubricated threads
(Non-lubricated threads)
Mounting torque
Approximate weight
Case style
See dimensions - link at the end of datasheet
TO NUT
TO DEVICE
20 (27.5)
25
lbf in
0.23 (0.32)
0.29
kgf · m
2.3 (3.1)
2.8
N·m
14
g
0.49
oz.
TO-48 (TO-208AA)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.21
0.15
120°
0.25
0.25
90°
0.31
0.34
60°
0.45
0.47
30°
0.76
0.76
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93700
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
Vishay Semiconductors
130
22RIA Series
R thJC (DC) = 0.86 K/W
120
110
Conduction Angle
100
30°
60°
90°
120°
90
180°
80
0
5
10
15
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
www.vishay.com
20
22RIA Series
RthJC (DC) = 0.86 K/W
120
110
Conduction Period
100
30°
60°
90°
120°
180°
90
DC
80
25
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
40
/W
1K
3K
/W
RMS Limit
aR
elt
-D
25
K/
W
=
30
2
A
hS
180°
120°
90°
60°
30°
35
Rt
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
4K
/W
5K
/W
20
15
Conduction Angle
10
7K
/W
10 K
/W
22RIA Series
TJ = 125°C
5
0
0
5
10
15
20
Average On-state Current (A)
25
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
50
DC
180°
120°
90°
60°
30°
45
K/
W
1
W
K/
a
elt
-D
30
2
=
35
A
hS
40
Rt
3K
/W
4K
/W
25 RMS Limit
20
5K
/W
7K
/W
Conduction Period
15
22RIA Series
TJ = 125°C
10
5
R
Maximum Average On-state Power Loss (W)
Fig. 2 - On-State Power Loss Characteristics
10 K/W
0
0
5
10
15
20
25
Average On-state Current (A)
30
0
35
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Revision: 21-Sep-17
Document Number: 93700
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
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400
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
350
325
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
375
Vishay Semiconductors
300
275
250
225
200
22RIA Series
175
150
1
10
100
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRMReapplied
375
350
325
300
275
250
225
200
175
22RIA Series
150
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
TJ= 25°C
10
TJ = 125°C
22RIA Series
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 6 - Forward Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.86 K/W
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 7 - Thermal Impedance ZthJC Characteristics
Revision: 21-Sep-17
Document Number: 93700
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms
tr = 6 µs
b) Recommended load line for