VS-240NQ045PBF

VS-240NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 240 A FEATURES • 150 °C TJ operation Lug terminal anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level Base cathode HALF-PAK (D-67) • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) The VS-240NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. 240 A VR 45 V Package HALF-PAK (D-67) Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 240 Apk, TJ = 125 °C TJ Range VALUES UNITS 240 A 45 V 26 000 A 0.64 V -55 to +150 °C VS-240NQ045PbF UNITS 45 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 240 Maximum peak one cycle  non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 18 A, L = 1 mH 162 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 48 A Repetitive avalanche current 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 26 000 UNITS A 3400 Revision: 10-Jun-2020 Document Number: 94462 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-240NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 240 A Maximum forward voltage drop See fig. 1 VFM (1) 240 A IRM (1) 1.04 TJ = 25 °C 0.97 20 VR = Rated VR Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS From top of terminal hole to mounting plane dV/dt mA 1120 Typical series inductance Maximum voltage rate of change V 0.64 TJ = 125 °C TJ = 125 °C UNITS 0.72 TJ = 25 °C 480 A 480 A Maximum reverse leakage current per leg See fig. 2 VALUES 14 800 pF 5.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Rated VR Note (1) Pulse width < 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 0.19 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.05 °C/W Approximate weight Mounting torque minimum 3 (26.5) 4 (35.4) Non-lubricated threads N·m (lbf · in) 3.4 (30) maximum 5 (44.2) Case style HALF-PAK module 1000 10 000 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) g oz. maximum minimum Terminal torque 30 1.06 100 TJ = 125 °C 10 TJ = 25 °C TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C TJ = 50 °C 1 TJ = 25 °C 1 0.1 0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jun-2020 Document Number: 94462 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-240NQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 t1 - Rectangular Pulse Duration (s) 250 160 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 140 120 Square wave (D = 0.50) 80 % rated VR applied 100 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 200 150 RMS limit 100 DC 50 See note (1) 0 60 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 10-Jun-2020 Document Number: 94462 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-240NQ045PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 1000 100 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR ORDERING INFORMATION TABLE Device code VS- 24 0 N Q 1 2 3 4 5 045 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (045 = 45 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 10-Jun-2020 Document Number: 94462 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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