VS-241NQ045PBF

VS-241NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 240 A FEATURES Lug terminal anode • 175 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base cathode • Designed and qualified for industrial level • UL approved file E222165 HALF-PAK (D-67) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION IF(AV) 240 A VR 45 V Package HALF-PAK (D-67) Circuit configuration Single diode The VS-241NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 240 Apk, TJ = 125 °C TJ Range VALUES UNITS 240 A 45 V 25 000 A 0.64 V -55 to +175 °C VS-241NQ045PbF UNITS 45 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS VALUES IF(AV) 50 % duty cycle at TC = 144 °C, rectangular waveform 240 Following any rated load condition and with rated VRRM applied UNITS Maximum peak one cycle  non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 26 A, L = 1 mH 324 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 48 A 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse 25 000 A 3450 Revision: 10-Jun-2020 Document Number: 94463 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-241NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 240 A Maximum forward voltage drop See fig. 1 VFM (1) 240 A IRM (1) 1.11 0.86 20 VR = Rated VR TJ = 125 °C CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS From top of terminal hole to mounting plane dV/dt mA 1120 Maximum junction capacitance Maximum voltage rate of change V 0.64 TJ = 125 °C TJ = 25 °C UNITS 0.80 TJ = 25 °C 480 A 480 A Maximum reverse leakage current See fig. 2 VALUES Rated VR 14 800 pF 5.0 nH 10 000 V/μs Note (1) Pulse width < 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg VALUES UNITS -55 to 175 °C Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.19 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.05 Approximate weight Mounting torque Terminal torque g oz. minimum 3 (26.5) 4 (35.4) Non-lubricated threads N·m (lbf · in) 3.4 (30) maximum 5 (44.2) Case style HALF-PAK module 10 000 1000 TJ = 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 30 1.06 maximum minimum °C/W 100 TJ = 125 °C 10 TJ = 25 °C 1 TJ = 175 °C 1000 TJ = 150 °C 100 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 10-Jun-2020 Document Number: 94463 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-241NQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 t1 - Rectangular Pulse Duration (s) 180 250 170 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 160 150 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 200 150 RMS limit 100 DC 50 See note (1) 100 0 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 10-Jun-2020 Document Number: 94463 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-241NQ045PbF IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 1000 100 10 000 tp - Square Wave Pulse Duration (µs) 94463_07 Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR ORDERING INFORMATION TABLE Device code VS- 24 1 N Q 1 2 3 4 5 045 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (045 = 45 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 10-Jun-2020 Document Number: 94463 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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