VS-245NQ015PBF

VS-245NQ015PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 240 A FEATURES Lug terminal anode • 125 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base cathode HALF-PAK (D-67) • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) The VS-245NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. 240 A VR 15 V Package HALF-PAK (D-67) Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 240 A 15 V 20 000 A 0.37 V -55 to +125 °C SYMBOL VS-245NQ015PbF UNITS VR 15 VRWM 25 Rectangular waveform VRRM IFSM tp = 5 μs sine VF 240 Apk, TJ = 75 °C TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle  non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5 A, L = 1 mH 12 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Repetitive avalanche current 50 % duty cycle at TC = 73 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 240 20 000 A 3000 Revision: 01-Feb-2019 Document Number: 94464 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-245NQ015PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 240 A Maximum forward voltage drop See fig. 1 VFM (1) 240 A IRM (1) Maximum junction capacitance CT Typical series inductance 045 80 VR = Rated VR TJ = 125 °C mA 4000 From top of terminal hole to mounting plane dV/dt V 0.37 VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C LS Maximum voltage rate of change 0.61 TJ = 125 °C TJ = 25 °C UNITS 0.52 TJ = 25 °C 480 A 480 A Maximum reverse leakage current See fig. 2 VALUES Rated VR 15 800 pF 5.0 nH 10 000 V/μs VALUES UNITS -55 to 125 °C Note (1) Pulse width < 500 μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 0.19 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.05 °C/W Approximate weight minimum Mounting torque oz. 3.4 (30) maximum N·m (lbf · in) 5 (44.2) HALF-PAK module 10 000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1.06 4 (35.4) Non-lubricated threads minimum Case style Tj = 100°C 100 Tj = 75°C 10 Tj = 25°C 1 0.0 g 3 (26.5) maximum Terminal torque 30 100°C 1000 75°C 100 25°C 10 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 3 6 9 12 15 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94464 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-245NQ015PbF www.vishay.com Vishay Semiconductors C - Junction Capacitance (pF) 100 000 10 000 1000 0 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.50 0.1 D = 0.33 D = 0.25 D = 0.20 0.01 0.001 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 t1 - Rectangular Pulse Duration (s) 200 120 100 DC 80 60 40 Square wave (D = 0.50) 80 % rated VR applied 20 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS limit 150 100 DC 50 see note (1) 0 0 0 40 80 120 160 200 240 280 320 360 0 50 100 150 200 250 300 350 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 01-Feb-2019 Document Number: 94464 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-245NQ015PbF www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 000 At Any Rated Load Conditions And With Rated VRRM Applied Following Surge 10 000 1000 10 100 1000 10 000 t - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR ORDERING INFORMATION TABLE Device code VS- 24 5 N Q 1 2 3 4 5 015 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (015 = 15 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 01-Feb-2019 Document Number: 94464 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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