VS-25CTQ...S-M3, VS-25CTQ...-1-M3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
2
• High frequency operation
1
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
1
3
D2PAK (TO-263AB)
2
TO-262AA
3
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
2
1 Common
3
Anode cathode Anode
VS-25CTQ...S-M3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1 Common
3
Anode cathode Anode
DESCRIPTION
VS-25CTQ...-1-M3
The VS-25CTQ... center tap Schottky rectifier series has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
35 V, 40 V, 45 V
VF at IF
0.50 V
IRM typ.
70 mA at 125 °C
TJ max.
150 °C
EAS
Package
Circuit configuration
20 mJ
D2PAK
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
VALUES
UNITS
30
A
35 to 45
V
tp = 5 μs sine
990
A
VF
15 Apk, TJ = 125 °C (per leg)
0.50
V
TJ
Range
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-25CTQ035S-M3
VS-25CTQ035-1-M3
VS-25CTQ040S-M3
VS-25CTQ040-1-M3
VS-25CTQ045S-M3
VS-25CTQ045-1-M3
UNITS
35
40
45
V
Revision: 21-Dec-2021
Document Number: 94930
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 102 °C, rectangular waveform
30
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
5 μs sine or 3 μs rect. pulse
990
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 3 A, L = 4.40 mH
20
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Repetitive avalanche current per leg
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
UNITS
A
250
ELECTRICAL SPECIFICATIONS
PARAMETER
15 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
Maximum reverse leakage current
per leg
IRM (1)
Typical reverse leakage current
IRM (1)
Maximum junction capacitance per leg
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = 125 °C
VR = Rated VR
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Rated VR
0.56
0.71
V
0.50
0.64
1.75
110
mA
70
mA
900
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 150
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
RthCS
DC operation
See fig. 4
3.25
DC operation
1.63
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
°C/W
Case style D2PAK (TO-263AB)
25CTQ035S
25CTQ040S
25CTQ045S
Case style TO-262AA
25CTQ035-1
25CTQ040-1
25CTQ045-1
Marking device
Revision: 21-Dec-2021
Document Number: 94930
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VS-25CTQ...S-M3, VS-25CTQ...-1-M3 Series
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Vishay Semiconductors
1000
IR - Reverse Current (mA)
IF - Instantaneous
Forward Current (A)
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
5
10
15
25
20
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
0.1
t1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 21-Dec-2021
Document Number: 94930
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25CTQ...S-M3, VS-25CTQ...-1-M3 Series
Vishay Semiconductors
12
160
25CTQ
RthJC (DC) = 3.25 °C/W
150
140
130
120
DC
110
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
10
Average Power Loss (W)
Allowalde Case Temperature (°C)
www.vishay.com
8
RMS limit
6
DC
4
2
100
0
0
5
10
15
0
25
20
2
4
6
8
10 12 14 16 18 20 22
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive
Surge Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
Revision: 21-Dec-2021
Document Number: 94930
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-25CTQ...S-M3, VS-25CTQ...-1-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
25
C
T
Q
045
S
1
2
3
4
5
6
7
TRL -M3
1
-
Vishay Semiconductors product
2
-
Current rating (25 A)
3
-
Circuit configuration: C = common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
S = D2PAK (TO-263AB)
8
9
035 = 35 V
040 = 40 V
045 = 45 V
-1 = TO-262AA
8
-
None = tube
TRL = tape and reel (left oriented - for D2PAK only)
TRR = tape and reel (right oriented - for D2PAK only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-25CTQ035S-M3
50
Antistatic plastic tubes
VS-25CTQ035STRL-M3
800
13" diameter plastic tape and reel
VS-25CTQ035STRR-M3
800
13" diameter plastic tape and reel
VS-25CTQ040S-M3
50
Antistatic plastic tubes
VS-25CTQ040STRL-M3
800
13" diameter plastic tape and reel
VS-25CTQ040STRR-M3
800
13" diameter plastic tape and reel
VS-25CTQ045S-M3
50
Antistatic plastic tubes
VS-25CTQ045STRL-M3
800
13" diameter plastic tape and reel
VS-25CTQ045STRR-M3
800
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
D2PAK (TO-263AB)
www.vishay.com/doc?96164
TO-262AA
www.vishay.com/doc?96165
D2PAK (TO-263AB)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?96424
SPICE model
www.vishay.com/doc?95285
Revision: 21-Dec-2021
Document Number: 94930
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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