VS-2EFH02HM3/I

VS-2EFH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature Cathode • Specified for output and snubber operation Anode • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-219AB (SMF) • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery. DO-219AB (SMF) IF(AV) 2A VR 200 V VF at IF (typ. 125 °C) 0.75 V trr 25 ns TJ max. 175 °C Diode variation Single die The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. These devices are intended for use in snubber boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 150 °C (1) 2 Non-repetitive peak surge current IFSM TJ = 25 °C 50 Operating junction and storage temperature range TJ, TStg A -65 to +175 °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 2 A - 0.88 0.95 IF = 2 A, TJ = 125 °C - 0.75 0.82 IR = 100 μA VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 1 8 VR = 200 V - 8 - UNITS V μA pF Revision: 27-Jun-16 Document Number: 95790 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS Reverse recovery charge UNITS - 24 - - - 25 TJ = 25 °C - 16 - - 22 - - 2 - - 3 - TJ = 25 °C - 16 - TJ = 125 °C - 30 - MIN. TYP. MAX. UNITS -65 - 175 °C IF = 2 A dIF/dt = 200 A/μs VR = 160 V TJ = 125 °C Qrr MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C IRRM TYP. IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 125 °C Peak recovery current MIN. ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to case RthJC Device mounted on PCB with 8 mm x 16 mm soldering lands - - 15 °C/W Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands - - 130 °C/W Approximate weight g oz. Case style SMF (DO-219AB) MEH 100 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 0.015 0.0005 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 175 °C 10 150 °C 125 °C 1 0.1 25 °C 0.01 0.001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Jun-16 Document Number: 95790 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFH02HM3 www.vishay.com Vishay Semiconductors 2.5 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 2 1.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 1 0.5 0 1 0 50 100 150 200 0 VR - Reverse Voltage (V) 1 1.5 2 2.5 3 3.5 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 35 180 175 30 170 25 165 DC trr (ns) Allowable Case Temperature (°C) 0.5 160 155 125 °C 15 Square wave (D = 0.50) 80 % rated VR applied 150 25 °C 20 10 145 See note (1) 5 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 100 2.2 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 45 40 Qrr (nC) 35 125 °C 30 25 25 °C 20 15 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 27-Jun-16 Document Number: 95790 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFH02HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 2 E F H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - F = SMF package 5 - Process type, 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2EFH02HM3/I 10 000 10 000 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95572 Part marking information www.vishay.com/doc?95618 Packaging information www.vishay.com/doc?95577 SPICE model www.vishay.com/doc?96013 Revision: 27-Jun-16 Document Number: 95790 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMF (DO-219AB) DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.10 (0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Revision: 16-Apr-18 Document Number: 95572 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000