VS-2EGH01-M3/5BT

VS-2EGH01-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt® FEATURES Cathode • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • Specific for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode SMB (DO-214AA) LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS 3D 3D State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in snubber, output operation, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element. 3D Models PRIMARY CHARACTERISTICS IF(AV) 2A VR 100 V VF at IF 0.66 V trr typ. 24 ns TJ max. 175 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes the cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TL = 150 °C (1) 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 70 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C Note (1) Mounted on PCB with 6 mm x 3.5 mm lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance Critical rate if rise of reverse voltage SYMBOL VBR, VR VF IR CT dV/dtτ TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 2 A - 0.84 0.9 0.7 IR = 100 μA UNITS V IF = 2 A, TJ = 150 °C - 0.66 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 - 13 - pF - - 10 000 V/μs VR = 100 V μA Revision: 17-Mar-2021 Document Number: 96443 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Peak recovery current TYP. MAX. - 24 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 27 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 23 TJ = 25 °C - 21 - TJ = 125 °C - 26 - IF = 2 A dIF/dt = 200 A/μs VR = 100 V TJ = 25 °C IRRM Reverse recovery charge MIN. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V ns - 2.7 - - 3.4 - TJ = 25 °C - 28 - TJ = 125 °C - 43 - MIN. TYP. MAX. UNITS -55 - 175 °C TJ = 125 °C Qrr UNITS A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount RthJM (1) - - 17 Thermal resistance, junction to ambient RthJA (1) - - 80 Approximate Weight Marking device °C/W 0.1 g 0.003 oz. Case style SMB (DO-214AA) 2H1 100 100 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Note (1) Units mounted on PCB 6 mm x 3.5 mm land areas TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C TJ = -40 °C 0.1 10 150 °C 125 °C 1 0.1 0.01 25 °C 0.001 0.0001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltagejjjl Revision: 17-Mar-2021 Document Number: 96443 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH01-M3 www.vishay.com Vishay Semiconductors 2 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1 0.5 0 1 0 50 100 150 0 200 0.5 1 1.5 2 2.5 3 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 40 170 35 30 DC 160 trr (ns) Allowable Case Temperature (°C) RMS Limit 1.5 150 IF = 2 A, 125 °C 25 20 IF = 2 A, 25 °C 140 15 130 10 5 100 120 0 0.5 1.0 1.5 2.0 2.5 typical value 3.0 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 60 55 50 IF = 2 A, 125 °C Qrr (nC) 45 40 35 30 25 IF = 2 A, 25 °C 20 15 typical value 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 17-Mar-2021 Document Number: 96443 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH01-M3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION (Example) PREFERRED P/N VS-2EGH01-M3/5BT PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96021 Revision: 17-Mar-2021 Document Number: 96443 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000