VS-2EGH02HM3/5BT

VS-2EGH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt® FEATURES Cathode • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • Specific for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode SMB (DO-214AA) LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in snubber, output operation, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element. 3D Models PRIMARY CHARACTERISTICS IF(AV) 2A VR 200 V VF at IF 0.66 V trr typ. 24 ns TJ max. 175 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TL = 150 °C (1) 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 70 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C Note (1) Mounted on PCB with 6 mm x 3.5 mm lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance Critical rate if rise of reverse voltage SYMBOL VBR, VR VF IR CT dV/dtτ TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 2 A - 0.84 0.9 0.7 IR = 100 μA UNITS V IF = 2 A, TJ = 150 °C - 0.66 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 VR = 200 V - 12 - pF - - 10 000 V/μs μA Revision: 17-Mar-2021 Document Number: 94859 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 24 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 27 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 23 TJ = 25 °C - 21 - TJ = 125 °C - 26 - - 2.7 - - 3.4 - TJ = 25 °C - 28 - TJ = 125 °C - 43 - IF = 2 A dIF/dt = 200 A/μs VR = 100 V TJ = 25 °C TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS Maximum junction and storage temperature range SYMBOL TJ, TStg TEST CONDITIONS -65 - 175 °C Thermal resistance, junction to mount RthJM (1) - - 17 Thermal resistance, junction to ambient RthJA (1) - - 80 Approximate Weight Marking device °C/W 0.1 g 0.003 oz. Case style SMB (DO-214AA) 2H2 100 100 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Note (1) Units mounted on PCB 6 mm x 3.5 mm land areas TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C TJ = -40 °C 0.1 10 150 °C 125 °C 1 0.1 0.01 25 °C 0.001 0.0001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 50 100 150 200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 17-Mar-2021 Document Number: 94859 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH02HM3 www.vishay.com Vishay Semiconductors 2 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1 0.5 0 1 0 50 100 150 0 200 0.5 1 1.5 2 2.5 3 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 40 170 35 30 DC 160 trr (ns) Allowable Case Temperature (°C) RMS Limit 1.5 150 IF = 2 A, 125 °C 25 20 IF = 2 A, 25 °C 140 15 130 10 5 100 120 0 0.5 1.0 1.5 2.0 2.5 typical value 3.0 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 60 55 50 IF = 2 A, 125 °C Qrr (nC) 45 40 35 30 25 IF = 2 A, 25 °C 20 15 typical value 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Revision: 17-Mar-2021 Document Number: 94859 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EGH02HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION (Example) PREFERRED P/N VS-2EGH02HM3_A/I PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION I 3200 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95472 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96021 Revision: 17-Mar-2021 Document Number: 94859 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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