VS-2EQH01HM3/H

VS-2EQH01HM3, VS-2EQH02HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt® FEATURES eSMP® Series • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current Top View • Meets MSL level 1, per LF maximum peak of 260 °C Bottom View • For PFC, CRM snubber operation MicroSMP (DO-219AD) Anode J-STD-020, • AEC-Q101 qualified Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial and automotive applications. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2A VR 100 V, 200 V VF at IF 0.82 V trr (typ.) 33 ns Case: MicroSMP (DO-219AD) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable J-STD-002, meets JESD 201 class 2 whisker test IFSM 30 A TJ max. 175 °C Package MicroSMP (DO-219AD) Circuit configuration Single per Polarity: color band denotes cathode end  ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage SYMBOL VS-2EQH01HM3 VS-2EQH02HM3 TEST CONDITIONS VALUES UNITS 100 V VRRM 200 Average rectified forward current IF(AV) TM = 137 °C 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 10 ms sine pulse 30 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VS-2EQH01HM3 VS-2EQH02HM3 VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 100 - - 200 IF = 2 A - 0.96 1.05 0.84 IF = 2 A, TJ = 150 °C - 0.82 VR = VR rated - - 1 TJ = 150 °C, VR = VR rated - - 25 VR = 200 V - 6 - UNITS V μA pF Revision: 08-Nov-2021 Document Number: 96564 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EQH01HM3, VS-2EQH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IRRM Reverse recovery charge Qrr TYP. MAX. - 33 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 23 TJ = 25 °C - 19 - - 33 - - 1.7 - - 2.5 - TJ = 125 °C Peak recovery current MIN. IF = 2 A dIF/dt = 200 A/μs VR = 100 V TJ = 25 °C TJ = 125 °C UNITS ns A TJ = 25 °C - 15 - TJ = 125 °C - 34 - MIN. TYP. MAX. UNITS -55 - 175 °C - 16 20 - 160 - nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM (1) Thermal resistance, junction to ambient RthJA VS-2EQH01HM3 Marking device TEST CONDITIONS Device mounted on FR4 PCB, 2 oz. standard footprint 2H1 Case style MicroSMP (DO-219AD) VS-2EQH02HM3 °C/W 2H2 100 10 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C 150 °C 1 125 °C 0.1 25 °C TJ = 25 °C TJ = -40 °C 0.01 0.1 0.2 0.7 1.2 1.7 2.2 2.7 0 25 50 75 100 125 150 175 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 08-Nov-2021 Document Number: 96564 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EQH01HM3, VS-2EQH02HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 50 100 150 200 VR - Reverse Voltage (V) ZthJM - Thermal Impedance Junction to Mount (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 0.50 0.20 0.10 0.05 0.02 0.01 DC 1 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Transient Thermal Impedance, Junction to Mount 2.5 170 Average Power Loss (W) Allowable Mount Temperature (°C) 180 160 DC 150 Square wave (D = 0.50) Rated VR applied 140 130 2 RMS limit 1.5 D = 0.01 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1 0.5 0 120 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 3.5 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Mount Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note Formula used: TM = TJ - (Pd + PdREV) x RthJM; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 08-Nov-2021 Document Number: 96564 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EQH01HM3, VS-2EQH02HM3 www.vishay.com Vishay Semiconductors 45 50 40 45 35 35 25 Qrr (nC) 30 trr (ns) 125 °C 40 125 °C 20 30 25 °C 25 20 15 15 25 °C 10 10 5 5 100 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 08-Nov-2021 Document Number: 96564 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EQH01HM3, VS-2EQH02HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 2 E Q H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - Q = MicroSMP package 5 - Process type, H = ultrafast recovery 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2EQH01HM3/H H 4500 7" diameter plastic tape and reel VS-2EQH02HM3/H H 4500 7" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96591 Part marking information www.vishay.com/doc?96590 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96595 Revision: 08-Nov-2021 Document Number: 96564 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors MicroSMP (DO-219AD), FRED Pt® DIMENSIONS in inches (millimeters) 0.059 (1.50) 0.043 (1.10) Cathode Band 0.055 (1.40) 0.047 (1.20) 0.030 (0.75) 0.022 (0.55) 0.039 (0.98) 0.031 (0.78) 0.030 (0.75) 0.022 (0.55) 0.091 (2.30) 0.083 (2.10) 0.106 (2.70) 0.091 (2.30) Mounting Pad Layout 0.029 (0.73) 0.025 (0.63) 0.079 (2.00) 0.011 (0.27) 0.005 (0.12) 0.043 (1.10) 0.032 (0.80) 0.032 (0.80) 0.020 (0.50) Revision: 13-Feb-2019 Document Number: 96591 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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