VS-2EYH01HM3, VS-2EYH02HM3
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Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt®
FEATURES
eSMP® Series
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Low leakage current
• Meets MSL level 1, per
LF maximum peak of 260 °C
Top View
J-STD-020,
• AEC-Q101 qualified, class 2 whisker test
Bottom View
• Compatible to SOD-128 package case outline
SlimSMAW (DO-221AD)
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
DESCRIPTION / APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in high frequency, freewheeling, DC/DC converters,
PFC, and in snubber industrial, and automotive
applications.
3D 3D
3D Models
MECHANICAL DATA
Case: SlimSMAW (DO-221AD)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
PRIMARY CHARACTERISTICS
IF(AV)
2A
VR
100 V, 200 V
VF at IF
0.69 V
IFSM
60 A
trr (typ.)
15 ns
Terminals:
J-STD-002
matte
tin
plated
leads,
solderable
per
Polarity: color band denotes cathode end
TJ max.
175 °C
Package
SlimSMAW (DO-221AD)
Circuit configuration
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse
voltage
SYMBOL
VS-2EYH01HM3
VS-2EYH02HM3
VALUES
IF(AV) (1)
Non-repetitive peak surge current
IFSM
UNITS
100
VRRM
Average rectified forward current
Operating junction and storage temperatures
TEST CONDITIONS
V
200
TC = 151 °C
2
TJ = 25 °C, 10 ms sine pulse wave
60
TJ, TStg
A
-55 to +175
°C
Note
(1) Mounted on infinite heatsink
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking
voltage
SYMBOL
VS-2EYH01HM3
VS-2EYH02HM3
Forward voltage, per diode
VBR, VR
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
TEST CONDITIONS
IR = 100 μA
MIN.
TYP.
MAX.
100
-
-
200
-
-
IF = 2 A
-
0.86
0.93
0.75
IF = 2 A, TJ = 150 °C
-
0.69
VR = VR rated
-
-
2
TJ = 150 °C, VR = VR rated
-
-
20
VR = 200 V
-
12
-
UNITS
V
μA
pF
Revision: 28-Jan-2021
Document Number: 96383
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2EYH01HM3, VS-2EYH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
-
22
-
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
-
15
-
IF = 0.5 A, IR = 1A, Irr = 0.25 A
-
-
28
TJ = 25 °C
-
16
-
TJ = 125 °C
Peak recovery current
IRRM
Reverse recovery charge
Qrr
UNITS
ns
-
26
-
-
2.7
-
-
3.4
-
TJ = 25 °C
-
20
-
TJ = 125 °C
-
43
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
Infinite heatsink
-
12
15
Device mounted on FR4 PCB,
2 oz. standard footprint
-
120
150
IF = 2 A,
dIF/dt = 200 A/μs,
VR = 100 V
TJ = 25 °C
TJ = 125 °C
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
TJ, TStg
Thermal resistance, junction to mount
RthJM (1)
Thermal resistance, junction to ambient
RthJA
VS-2EYH01HM3
Marking device
TEST CONDITIONS
2H1
Case style SlimSMAW (DO-221AD)
VS-2EYH02HM3
°C/W
2H2
100
100
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Note
(1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM)
10
TJ = 175 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = -40 °C
0.1
10
150 °C
1
125 °C
0.1
25 °C
0.01
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
50
100
150
200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-Jan-2021
Document Number: 96383
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2EYH01HM3, VS-2EYH02HM3
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
100
10
1
0
25
50
75
100
125
150
175
200
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1000
Junction to Ambient
100
Junction to Mount
10
1
0.1
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
2.5
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
DC
160
150
140
Square wave (D = 0.50)
rated VR applied
130
RMS limit
2
1.5
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1
0.5
See note (1)
0
120
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 28-Jan-2021
Document Number: 96383
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2EYH01HM3, VS-2EYH02HM3
www.vishay.com
Vishay Semiconductors
60
40
35
125 °C
50
25
Qrr (nC)
trr (ns)
30
125 °C
20
25 °C
40
30
25 °C
15
20
10
10
5
100
200
300
400
100
500
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
ORDERING INFORMATION TABLE
Device code
VS-
2
E
Y
H
02
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (2 = 2 A)
3
-
Circuit configuration:
E = single diode
4
-
Y = SlimSMAW (DO-221AD)
5
-
Process type,
6
-
Voltage code (02 = 200 V)
7
-
H = AEC-Q101 qualified
8
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyperfast recovery
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT
(g)
PREFERRED PACKAGE CODE
BASE QUANTITY
PACKAGING DESCRIPTION
VS-2EYH01HM3/H
0.033
H
3500
7"diameter plastic tape and reel
VS-2EYH01HM3/I
0.033
I
14 000
13"diameter plastic tape and reel
VS-2EYH02HM3/H
0.033
H
3500
7"diameter plastic tape and reel
VS-2EYH02HM3/I
0.033
I
14 000
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96582
Part marking information
www.vishay.com/doc?95562
Packaging information
www.vishay.com/doc?88869
SPICE model
www.vishay.com/doc?96585
Revision: 28-Jan-2021
Document Number: 96383
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SlimSMAW (DO-221AD)
DIMENSIONS in inches (millimeters)
SlimSMAW (DO-221AD)
Cathode band
0.106 (2.70)
0.091 (2.30)
0.075 (1.90)
0.063 (1.60)
0.032 (0.81)
0.014 (0.36)
0.158 (4.00)
0.142 (3.60)
0.024 (0.60)
0.012 (0.30)
0.197 (5.00)
0.173 (4.40)
0.043 (1.10)
0.035 (0.90)
0.009 (0.22)
0.004 (0.10)
0.083 (2.10) min.
0.055 (1.40) min.
0.118 (3.00) max.
0.055 (1.40) min.
0.228 (5.80) ref.
Mounting pad layout
Revision: 11-Dec-2018
Document Number: 96582
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2023
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Document Number: 91000