VS-2EYH02HM3/I

VS-2EYH01HM3, VS-2EYH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt® FEATURES eSMP® Series • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C Top View J-STD-020, • AEC-Q101 qualified, class 2 whisker test Bottom View • Compatible to SOD-128 package case outline SlimSMAW (DO-221AD) Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotive applications. 3D 3D 3D Models MECHANICAL DATA Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant PRIMARY CHARACTERISTICS IF(AV) 2A VR 100 V, 200 V VF at IF 0.69 V IFSM 60 A trr (typ.) 15 ns Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: color band denotes cathode end TJ max. 175 °C Package SlimSMAW (DO-221AD) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage SYMBOL VS-2EYH01HM3 VS-2EYH02HM3 VALUES IF(AV) (1) Non-repetitive peak surge current IFSM UNITS 100 VRRM Average rectified forward current Operating junction and storage temperatures TEST CONDITIONS V 200 TC = 151 °C 2 TJ = 25 °C, 10 ms sine pulse wave 60 TJ, TStg A -55 to +175 °C Note (1) Mounted on infinite heatsink ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VS-2EYH01HM3 VS-2EYH02HM3 Forward voltage, per diode VBR, VR VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 100 - - 200 - - IF = 2 A - 0.86 0.93 0.75 IF = 2 A, TJ = 150 °C - 0.69 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 VR = 200 V - 12 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96383 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EYH01HM3, VS-2EYH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 22 - IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 15 - IF = 0.5 A, IR = 1A, Irr = 0.25 A - - 28 TJ = 25 °C - 16 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS ns - 26 - - 2.7 - - 3.4 - TJ = 25 °C - 20 - TJ = 125 °C - 43 - MIN. TYP. MAX. UNITS -55 - 175 °C Infinite heatsink - 12 15 Device mounted on FR4 PCB, 2 oz. standard footprint - 120 150 IF = 2 A, dIF/dt = 200 A/μs, VR = 100 V TJ = 25 °C TJ = 125 °C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM (1) Thermal resistance, junction to ambient RthJA VS-2EYH01HM3 Marking device TEST CONDITIONS 2H1 Case style SlimSMAW (DO-221AD) VS-2EYH02HM3 °C/W 2H2 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Note (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = -40 °C 0.1 10 150 °C 1 125 °C 0.1 25 °C 0.01 0.001 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 50 100 150 200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96383 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EYH01HM3, VS-2EYH02HM3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 1 0 25 50 75 100 125 150 175 200 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1000 Junction to Ambient 100 Junction to Mount 10 1 0.1 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 2.5 170 Average Power Loss (W) Allowable Case Temperature (°C) 180 DC 160 150 140 Square wave (D = 0.50) rated VR applied 130 RMS limit 2 1.5 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1 0.5 See note (1) 0 120 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 96383 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EYH01HM3, VS-2EYH02HM3 www.vishay.com Vishay Semiconductors 60 40 35 125 °C 50 25 Qrr (nC) trr (ns) 30 125 °C 20 25 °C 40 30 25 °C 15 20 10 10 5 100 200 300 400 100 500 200 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt ORDERING INFORMATION TABLE Device code VS- 2 E Y H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - Y = SlimSMAW (DO-221AD) 5 - Process type, 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY PACKAGING DESCRIPTION VS-2EYH01HM3/H 0.033 H 3500 7"diameter plastic tape and reel VS-2EYH01HM3/I 0.033 I 14 000 13"diameter plastic tape and reel VS-2EYH02HM3/H 0.033 H 3500 7"diameter plastic tape and reel VS-2EYH02HM3/I 0.033 I 14 000 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96582 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96585 Revision: 28-Jan-2021 Document Number: 96383 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimSMAW (DO-221AD) DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.091 (2.30) 0.075 (1.90) 0.063 (1.60) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.009 (0.22) 0.004 (0.10) 0.083 (2.10) min. 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 11-Dec-2018 Document Number: 96582 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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