VS-2KBP Series
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Vishay Semiconductors
Single Phase Bridge Rectifier, 2 A
FEATURES
• Suitable for printed circuit board mounting
• Compact construction
• High surge current capability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
D-44
A 2 A single phase encapsulated bridge rectifier consisting
of four single diodes connected as a full bridge. They are
intended for general applications in industrial and consumer
equipment.
PRIMARY CHARACTERISTICS
IO
2A
VRRM
50 V to 1000 V
Package
D-44
Circuit configuration
Single phase bridge
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IO
IFSM
I2t
VALUES
UNITS
2.0
A
50 Hz
60
60 Hz
63
50 Hz
18
60 Hz
16
A
A2s
VRRM
50 to 1000
V
TJ
-40 to +150
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
PART NUMBER
VRSM, MAXIMUM
VRRM, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
(V)
(V)
VRMS, MAXIMUM RECOMMENDED
RMS SUPPLY VOLTAGE
(V)
VS-2KBP005
50
50
20
VS-2KBP01
100
100
50
VS-2KBP02
200
200
80
VS-2KBP04
400
400
125
VS-2KBP06
600
600
250
VS-2KBP08
800
800
380
VS-2KBP10
1000
1000
500
Revision: 25-Oct-17
Document Number: 93562
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2KBP Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current
IO
Maximum peak one cycle,
non-repetitive surge current
IFSM
TEST CONDITIONS
VALUES
TA = 50 °C, resistive or inductive load
2.0
TA = 50 °C, capacitive load
1.6
t = 10 ms, 20 ms
Following any rated load condition
and with rated VRRM reapplied
60
100 % VRRM
reapplied
18
t = 8.3 ms, 16.7 ms
t = 10 ms
t = 8.3 ms
UNITS
A
A
63
Initial
TJ = TJ maximum
16
Maximum I2t capability for fusing
I2t
Maximum I2t capability for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
255
Maximum peak forward voltage per diode
VFM
IFM = 1 A, TJ = 25 °C
1.0
V
TJ = 25 °C, 100 % VRRM
10
μA
1.0
mA
40 to 1000
Hz
t = 10 ms
No voltage
reapplied
t = 8.3 ms
Typical peak reverse leakage
current per diode
IRM
Operating frequency range
A2s
26
23
TJ = 150 °C, 100 % VRRM
f
A2s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction and storage temperature range
SYMBOL
VALUES
UNITS
TJ, TStg
-40 to 150
°C
Approximate weight
Maximum Peak Output Current (A)
Average Output Current (A)
2.2
2.0
Resistive, inductive load
1.8
1.6
1.4
1.2
Capacitive load
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
4
g
0.14
oz.
70
60
50
From any rated
load condition
40
30
20
10
0
10-2
10-1
1
Maximum Allowable Ambient Temperature (°C)
Pulse Train Duration (s)
Fig. 1 - Ambient Temperature Ratings
Fig. 2 - Non-Repetitive Surge Ratings
10
Revision: 25-Oct-17
Document Number: 93562
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2KBP Series
www.vishay.com
Vishay Semiconductors
CIRCUIT CONFIGURATION
IO
+
~
~
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95329
Revision: 25-Oct-17
Document Number: 93562
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-44
DIMENSIONS in millimeters (inches)
22 (0.87)
15 (0.59)
+
3.8 (0.15)
~
17.5 (0.69)
3.8 (0.15)
~
3.8 (0.15)
6.8 (0.27)
Ø 0.75
(0.030)
Document Number: 95329
Revision: 04-Jul-08
For technical questions, contact: indmodules@vishay.com
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1
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Revision: 01-Jan-2023
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Document Number: 91000