VS-301U(R), VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series
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Standard Recovery Diodes,
(Stud Version), 300 A
FEATURES
• Wide current range
• High voltage rating up to 2500 V
• High surge current capabilities
• Stud cathode and stud anode version
• High resistance to acceleration
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DO-9 (DO-205AB)
TYPICAL APPLICATIONS
• Converters
PRIMARY CHARACTERISTICS
• Power supplies
• Machine tool controls
IF(AV)
300 A
Package
DO-9 (DO-205AB)
Circuit configuration
Single
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IF(AV)
301U(R)
TEST CONDITIONS
I2t
VRRM
250
UNITS
330
300
A
TC
120
120
°C
520
470
A
50 Hz
8250
6050
60 Hz
8640
6335
IF(RMS)
IFSM
160 TO 200
A
50 Hz
340
183
60 Hz
311
167
Range
1600 to 2000
2500
V
-40 to +180
-40 to +180
°C
TJ
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-301U(R)
VS-303U(R)
VS-305U(R)
VS-307U(R)
VS-309U(R)
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
160
1600
1700
200
2000
2100
250
2500
2600
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
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FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
IF(AV)
IF(RMS)
IFSM
180° conduction, half sine wave
I2√t
300
A
120
120
°C
A
520
470
6050
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
330
8250
t = 8.3 ms
I2t
250
t = 10 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
UNITS
160 TO 200
DC at TC = 115 °C (up to 2000 V), TC = 102 °C (2500 V)
t = 10 ms
Maximum I2t for fusing
301U(R)
TEST CONDITIONS
8640
6335
6940
5090
7270
5330
340
183
311
167
241
129
220
118
3400
1830
Low level value of threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.77
0.90
High level value of threshold voltage
VF(TO)2
(I > π x IF(AV)), TJ = TJ maximum
0.84
0.97
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.49
0.59
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.49
0.55
Ipk = 942 A, TJ = TJ maximum, tp = 10 ms sinusoidal
wave
1.22
1.46
A
kA2s
kA2√s
V
mΩ
Maximum forward voltage drop
VFM
V
SPECIAL SELECTION FORWARD VOLTAGE (Tj = 25 °C)
DEVICE CLASSIFICATION
VS-305U250P4
VS-307UA250P4
VS-305UR250P4
VS-307URA250P4
BAND
MIN.
MAX.
UNIT
TEST CONDITIONS
P4
1.31
1.40
V
1000 Apk
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
VALUES
TJ
-40 to 180
Maximum storage
temperature range
TStg
-40 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.14
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.08
°C
K/W
Maximum allowed mounting torque
+0 -20 %
Weight
Case style
UNITS
Not lubricated threads
37
Lubricated threads
28
301U
250 ± 5
303U
152 ± 5
305U
177 ± 5
307U
197 ± 5
309U
160 ± 5
See dimensions - link at the end of datasheet
N·m
g
DO-9 (DO-205AB)
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ΔRthJC CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGLE
RECTANGULAR CONDUCTION
80 TO 200
250
80 TO 200
250
180°
0.015
0.015
0.011
0.011
120°
0.018
0.018
0.019
0.019
90°
0.023
0.023
0.025
0.025
60°
0.034
0.034
0.035
0.035
30°
0.056
0.056
0.057
0.057
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
301U(R) Series(1600V to 2000V)
RthJC (DC) = 0.14 K/ W
170
160
Conduction Angle
150
140
130
30°
60°
120
180°
90°
120°
110
0
50
100
150
200
250
300
350
Maximum Allowable Case Temperat ure (°C)
180
180
301U(R) Series (2500V)
RthJC (DC) = 0.14 K/ W
170
160
150
Conduction Angle
140
30°
60°
130
90°
120
120°
180°
110
0
50
100
150
200
250
300
350
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
180
301U(R) Series(1600V to 2000V)
RthJC (DC) = 0.14 K/ W
170
160
150
Conduction Period
140
130
30°
60°
120
90°
120°
110
180°
100
0
100
200
300
400
DC
500
600
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
180
301U(R) Series (2500V)
170
RthJC (DC) = 0.14 K/ W
160
150
Conduction Period
140
130
120
30°
60°
110
90°
120°
100
180°
DC
90
0
100
200
300
400
500
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
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VS-301U(R), VS-303U(R), VS-305U(R), VS-307U(R), VS-309U(R) Series
Vishay Semiconductors
400
A
hS
1
0.
W
K/
0.
3
=
K/
W
ta
el
-D
250
W
K/
300
Rt
180°
120°
90°
60°
30°
350
2
0.
RMSLimit
R
Maximum Avera ge Forward Power Loss (W)
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200
0.7
K/ W
150
Conduction Angle
100
1.5 K
/
301U(R) Series
(1600V to 2000V)
TJ = 180°C
50
W
3 K/ W
0
0
50
100
150
200
250
300
350
20
40
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
550
DC
180°
120°
90°
60°
30°
500
400
350
R
SA
450
th
Maximum Average Forward Power Loss (W)
Fig. 4 - Forward Power Loss Characteristics
0.
2
=
0.
1
K/
W
-D
el
ta
K/
W
R
0.3
K/
W
300
250 RMSLimit
200
Conduc tion Period
150
301U(R) Series
(1600V to 2000V)
TJ = 180°C
100
50
0.7
K/ W
1.5 K/
W
3 K/ W
0
0
100
200
300
400
500
600
20 40
Average Forward Current (A)
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
450
180°
120°
90°
60°
30°
K/
W
W
K/
ta
el
-D
0.
3
1
0.
300
0.
2
=
350
SA
400
R th
K/
W
R
Maximum Average Forward Power Loss(W)
Fig. 5 - Forward Power Loss Characteristics
RMSLimit
250
200
0.7
K/ W
150
Conduction Angle
100
301U(R) Series (2500V)
50
1.5 K
/
W
3 K/ W
TJ = 180°C
0
0
50
100
150
200
250
Average Forward Current (A)
300
20
40
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
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Vishay Semiconductors
600
DC
180°
120°
90°
60°
30°
500
SA
400
R
th
Maximum Average Forward Power Loss(W)
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=
0.
2K
/W
0.
1
K/
W
-D
el
ta
R
0.3
K/
W
300
RMS Limit
Conduction Period
200
0.7
K/ W
301U(R) Series (2500V)
TJ = 180°C
100
1.5 K/ W
3 K/ W
0
0
100
200
300
400
Average Forward Current (A)
500
20 40
60
80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
7000
Initial TJ = 180°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
6000
5000
4000
3000
301U(R) Series
(1600V to 2000V)
2000
Peak Half Sine Wave Forward Current (A)
1
10
Peak Half Sine Wave Forward Current (A)
8000
100
6000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 180°C
5000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
4500
5500
4000
3500
3000
2500
2000
301U(R) Series (2500V)
1500
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
No Voltage Reapplied
Rated VRRM Reapplied
6000
5000
4000
3000
2000
1000
0.01
301U(R) Series
(1600V to 2000V)
0.1
1
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
6000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 180 °C
5000
No Voltage Reapplied
Rated VRRM Reapplied
4000
3000
2000
301U(R) Series (2500V)
1000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 11 - Maximum Non-Repetitive Surge Current
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10000
TJ = 25°C
Instantaneous Forward Current (A)
Instantaneous Forward Current (A)
10000
TJ = 180°C
1000
100
301U(R) Series
(1600V to 2000V)
TJ = 25°C
TJ = 180°C
1000
100
301U(R) Series (2500V)
10
10
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
Fig. 13 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z thJC (K/ W)
Instantaneous Forward Voltage (V)
1
0.1
Steady State Value:
RthJC = 0.14 K/ W
(DC Operation)
0.01
301U(R) Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristic
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ORDERING INFORMATION TABLE
Device code
VS-
30
1
U
A
250
P4
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
30 = essential part number
3
-
1 = standard device
3 = top threaded version
5 = type for rotating application with top threaded
version 3/8 16UNC-2A
7 = type for rotating application with flexible lead
9 = type for rotating application with top threaded
version 3/8 24UNF
4
-
U = stud normal polarity (cathode to stud)
UR = stud reverse polarity (anode to stud)
5
-
A = maximum leakage selection IRRM = 2 mA, TJ = 25 °C
6
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
7
-
Refer special selection table for applicable parts
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95337
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Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for 301U(R), 307U(R),
305U(R) and 309U(R) Series
DIMENSIONS FOR 301U(R) SERIES - DO-205AB (DO-9) in millimeters (inches)
19 (0.75) MAX.
Ceramic housing
24 (0.94)
MAX.
Ø 8.7 (0.34) MAX.
140 (5.51)
146 (5.75)
28 (1.10)
MAX.
21(0.83)
MAX.
3/4"-16UNF-2A
for metric device: M16 x 1.5
contact factory
32 (1.26)
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Outline Dimensions
Vishay Semiconductors DO-205AB (DO-9), B-60, B-61, B-41, B-40 for
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 307U(R) SERIES - B-60 in millimeters (inches)
Ceramic housing
19 (0.75) MAX.
11 (0.43)
NOM.
12 (0.47)
MIN.
Ø 8.5 (0.33)
140 (5.51)
148 (5.83)
54 (2.13)
MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
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3.9 (0.15)
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Outline Dimensions
DO-205AB (DO-9), B-60, B-61, B-41, B-40 for Vishay Semiconductors
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 305U(R) SERIES - B-61 in millimeters (inches)
Ceramic housing
3/8"-16UNC-2A
6.4 (0.25)
MAX.
98 (3.86)
MAX.
59 (2.32)
MAX.
7 (0.28) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
16 (0.63)
32 (1.26)
DIMENSIONS FOR 309U(R) SERIES - B-41 in millimeters (inches)
Ceramic housing
3/8"-24UNF-2A
7.6 (0.3) MAX.
97 (3.82)
MAX.
60 (2.36)
MAX.
7 (0.28) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
Document Number: 95337
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Outline Dimensions
Vishay Semiconductors DO-205AB (DO-9), B-60, B-61, B-41, B-40 for
301U(R), 307U(R), 305U(R) and 309U(R) Series
DIMENSIONS FOR 303U(R) SERIES - B-40 in millimeters (inches)
Ceramic housing
3/8"-24UNF-2A
16.5 (0.65)
MAX.
Ø 27.3 (1.07) MAX.
59.7 (2.35)
MAX.
29 (1.14)
MAX.
9 (0.35) MAX.
21 (0.83)
MAX.
3/4"-16UNF-2A
32 (1.26)
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17.5 (0.69)
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Document Number: 95337
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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