VS-30BQ015-M3/9AT

VS-30BQ015-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES Cathode Anode SMC PRODUCT SUMMARY Package SMC IF(AV) 3.0 A VR 15 V VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ • Ultralow forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-30BQ015-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM VALUES UNITS 3.0 A 15 V IFSM tp = 5 μs sine 650 A VF 1.0 Apk, TJ = 75 °C 0.30 V TJ Range -55 to +125 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ015-M3 VR 15 VRWM 25 Maximum DC reverse voltage Maximum working peak reverse voltage UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 83 °C, rectangular waveform 3.0 50 % duty cycle at TL = 78 °C, rectangular waveform 4.0 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 650 UNITS A Maximum peak one cycle  non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 12 mH 1.5 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A 10 ms sine or 6 ms rect. pulse 75 Revision: 06-Sep-10 Document Number: 93359 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 °C 6A 3A TJ = 75 °C 6A Maximum reverse leakage current IRM Maximum junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt TJ = 25 °C VR = Rated VR TJ = 100 °C VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.35 0.43 V 0.30 0.38 4 mA 50 1120 pF 3.0 nH 10 000 V/μs VALUES UNITS Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) -55 to +125 Maximum storage temperature range TStg -55 to +150 Maximum thermal resistance,  junction to lead RthJL (2) Maximum thermal resistance,  junction to ambient RthJA 12 DC operation °C/W 46 0.24 Approximate weight Marking device °C g 0.008 Case style SMC (similar to DO-214AB) oz. 3C Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 06-Sep-10 Document Number: 93359 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015-M3 Vishay Semiconductors 10 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 1 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0 0.6 3 6 9 12 15 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Juction Capacitance (pF) 1000 TJ = 25 °C 100 0 4 8 12 16 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 1 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 06-Sep-10 Document Number: 93359 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015-M3 Vishay Semiconductors 1.5 180 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 160 DC 140 Average Power Loss (W) Allowable Lead Temperature (°C) www.vishay.com 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit DC 0.5 See note (1) 0 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 06-Sep-10 Document Number: 93359 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 015 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating 3 - B = SMC 4 - Q = Schottky “Q” series 5 - Voltage rating (015 = 15 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30BQ015-M3/9AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 06-Sep-10 Document Number: 93359 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000