VS-30BQ015HM3/9AT

VS-30BQ015HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation SMC (DO-214AB) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C LINKS TO ADDITIONAL RESOURCES • Meets JESD 201 class 2 whisker test 3D 3D • AEC-Q101 qualified 3D Models • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION IF(AV) 3.0 A VR 15 V VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C EAS 1.5 mJ Package SMC (DO-214AB) Circuit configuration Single The VS-30BQ015HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 3.0 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1.0 Apk, TJ = 75 °C TJ Range 15 V 650 A 0.30 V -55 to +125 °C SYMBOL VS-30BQ015HM3 UNITS VR 15 VRWM 25 VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES 50 % duty cycle at TL = 83 °C, rectangular waveform 3.0 50 % duty cycle at TL = 78 °C, rectangular waveform 4.0 5 μs sine or 3 μs rect. pulse 650 UNITS Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 12 mH 1.5 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 75 Revision: 25-Aug-2020 Document Number: 94842 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 °C 6A 3A TJ = 75 °C 6A TJ = 25 °C Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt VR = Rated VR TJ = 100 °C Rated VR VALUES UNITS 0.35 0.43 V 0.30 0.38 4 mA 50 1120 pF 3.0 nH 10 000 V/μs VALUES UNITS Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) -55 to +125 Maximum storage temperature range TStg -55 to +150 Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA 12 DC operation °C/W 46 Approximate weight Marking device °C Case style SMC (DO-214AB) 0.24 g 0.008 oz. 3C Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 25-Aug-2020 Document Number: 94842 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015HM3 Vishay Semiconductors 10 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 1 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0 0.6 3 6 9 12 15 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage (Per Leg) CT - Juction Capacitance (pF) 1000 TJ = 25 °C 100 0 4 8 12 16 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 1 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 25-Aug-2020 Document Number: 94842 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015HM3 Vishay Semiconductors 1.5 180 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 160 DC 140 Average Power Loss (W) Allowable Lead Temperature (°C) www.vishay.com 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit DC 0.5 See note (1) 0 60 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 25-Aug-2020 Document Number: 94842 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ015HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 015 H M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - B = SMC 4 - Q = Schottky “Q” series 5 - Voltage rating (015 = 15 V) 6 - H = AEC-Q101 qualified 7 - Environmental digit: M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel VS-30BQ015HM3/9AT LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 25-Aug-2020 Document Number: 94842 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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