VS-30BQ040-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Very low forward voltage drop
Cathode
• Guard ring for enhanced ruggedness and long
term reliability
Anode
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VR
40 V
VF at IF
0.46 V
IRM
30 mA at 125 °C
TJ max.
150 °C
DESCRIPTION
EAS
6.0 mJ
Package
SMC (DO-214AB)
Circuit configuration
Single
The VS-30BQ040-M3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
3.0 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
3.0
A
40
V
1600
A
0.46
V
-55 to +150
°C
VS-30BQ040-M3
UNITS
40
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 115 °C, rectangular waveform
3.0
50 % duty cycle at TL = 104 °C, rectangular waveform
4.0
UNITS
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.0 A, L = 12 mH
6.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
1600
A
90
Revision: 18-Apr-2019
Document Number: 93332
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ040-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
Typical series inductance
Maximum voltage rate of change
LS
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
UNITS
0.57
0.76
V
0.46
0.64
0.5
mA
30
230
pF
3.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
12
DC operation
0.24
Approximate weight
Marking device
°C/W
46
g
0.008
Case style SMC (DO-214AB)
oz.
3F
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 18-Apr-2019
Document Number: 93332
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ040-M3
Vishay Semiconductors
10
100 000
TJ = 150 °C
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
10 000
TJ = 125 °C
TJ = 100 °C
1000
TJ = 75 °C
100
TJ = 50 °C
10
0.1
TJ = 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
10
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
0.01
0.1
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 18-Apr-2019
Document Number: 93332
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ040-M3
Vishay Semiconductors
160
2.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
140
Average Power Loss (W)
Allowable Lead Temperature (°C)
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120
100
Square wave (D = 0.50)
80 % rated VR applied
80
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2.0
1.5
RMS limit
1.0
DC
0.5
See note (1)
0
60
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
10 000
1000
100
10
At any rated load condition
and with rated VRRM applied
following surge
1
10
100
1000
10 000
tp - Square Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 18-Apr-2019
Document Number: 93332
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ040-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
B
Q
040
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMC
4
-
Q = Schottky “Q” series
5
-
Voltage rating (040 = 40 V)
6
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30BQ040-M3/9AT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
9AT
3500
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95402
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96601
Revision: 18-Apr-2019
Document Number: 93332
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMC
DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 95402
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
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www.vishay.com
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
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Document Number: 91000