VS-30BQ060-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMC (DO-214AB)
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
DESCRIPTION
3D Models
The VS-30BQ060-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VR
60 V
VF at IF
0.52 V
IRM
20 mA at 125 °C
TJ max.
150 °C
EAS
5.0 mJ
Package
SMC (DO-214AB)
Circuit configuration
Single
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per J-STD-002
Polarity: color band denotes cathode end
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
3.0 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
3.0
A
60
V
1200
A
0.52
V
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-30BQ060-M3
UNITS
60
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
IF(AV)
TEST CONDITIONS
VALUES
50 % duty cycle at TL = 123 °C, rectangular waveform
3.0
50 % duty cycle at TL = 113 °C, rectangular waveform
UNITS
4.0
A
Maximum peak one cycle
non-repetitive surge current
at TC = 25 °C
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.0 A, L = 10 mH
5.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
1200
130
Revision: 07-Mar-2022
Document Number: 93330
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ060-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
VALUES
UNITS
0.58
0.76
V
0.52
0.66
0.5
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to1 MHz), 25 °C
180
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
3.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Maximum voltage rate of change
dV/dt
VR = Rated VR
TJ = 125 °C
Rated VR
mA
20
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
TJ (1)
Maximum storage temperature range
TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
12
DC operation
Approximate weight
Marking device
°C/W
46
Case style SMC (DO-214AB)
0.24
g
0.008
oz.
3H
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 07-Mar-2022
Document Number: 93330
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ060-M3
Vishay Semiconductors
100
10
1
0.1
0.1
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.9
10
20
30
50
40
60
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0
10
20
30
50
40
60
70
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
100
10
PDM
1
t1
0.1
0.01
0.00001
Single pulse
thermal resistance)
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 07-Mar-2022
Document Number: 93330
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ060-M3
Vishay Semiconductors
2.5
160
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
150
140
Average Power Loss (W)
Allowable Lead Temperature (°C)
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DC
130
120
80 % Square wave
(D = 0.50)
110
100
90
80
2.0
1.5
RMS limit
1.0
DC
0.5
See note (1)
0
70
0
1
2
3
0
5
4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IF(AV) - Average Power Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
Tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 07-Mar-2022
Document Number: 93330
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30BQ060-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
B
Q
060
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMC
4
-
Q = Schottky “Q” series
5
-
Voltage rating (060 = 60 V)
6
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
9AT
3500
13" diameter plastic tape and reel
VS-30BQ060-M3/9AT
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95402
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96996
Revision: 07-Mar-2022
Document Number: 93330
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMC
DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 95402
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000