VS-30CTH02-1-M3

VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current 2 • 175 °C operating junction temperature 1 1 3 D2PAK (TO-263AB) 2 Base Common Cathode 2 Base Common Cathode 2 2 Common Cathode 2 Common Cathode 3 Anode 1 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C TO-262AA 3 DESCRIPTION / APPLICATIONS Vishay Semiconductors 200 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 3 Anode 1 Anode VS-30CTH02S-M3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VS-30CTH02-1-M3 PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VR 200 V VF at IF 0.78 V trr typ. 30 ns TJ max. 175 °C Package D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VRRM per diode Average rectified forward current per device Non-repetitive peak surge current IF(AV) IFSM Operating junction and storage temperatures MAX. UNITS 200 V TC = 159 °C 15 TC = 25 °C 200 30 TJ, TStg A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance Series inductance TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 200 - - V IF = 15 A - 0.92 1.05 IF = 15 A, TJ = 125 °C - 0.78 0.85 V VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - 5 300 CT VR = 200 V - 57 - pF LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 21-Dec-2021 Document Number: 96234 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS Reverse recovery charge Qrr MAX. - - 35 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 26 - IF = 15 A dIF/dt = 200 A/μs VR = 160 V - 40 - - 2.8 - TJ = 125 °C - 6.0 - TJ = 25 °C - 37 - TJ = 125 °C - 120 - TJ = 25 °C IRRM TYP. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 125 °C Peak recovery current MIN. UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per diode SYMBOL MIN. TYP. MAX. TJ, TStg -65 - 175 °C RthJC - - 1.1 °C/W - 2.0 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device UNITS Case style D2PAK (TO-263AB) 30CTH02S Case style TO-262 30CTH02-1 100 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.4 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Dec-2021 Document Number: 96234 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 50 100 150 200 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM Single pulse (thermal resistance) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 25 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC 160 Square wave (D = 0.50) Rated VR applied 150 20 RMS limit 15 10 5 DC See note (1) 140 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 21-Dec-2021 Document Number: 96234 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors 100 1000 IF = 15 A trr (ns) Qrr (nC) IF = 15 A 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 21-Dec-2021 Document Number: 96234 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 C T H 02 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - C = common cathode 4 - T = TO-220, D2PAK (TO-263AB) 5 - H = hyperfast rectifier 6 - Voltage rating (02 = 200 V) 7 - S = D2PAK (TO-263AB) TRL -M3 8 9 -1 = TO-262AA 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D2PAK (TO-263AB) package) TRR = tape and reel (right oriented, for D2PAK (TO-263AB) package) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY VS-30CTH02S-M3 50 PACKAGING DESCRIPTION Antistatic plastic tubes VS-30CTH02STRL-M3 800 13" diameter plastic tape and reel VS-30CTH02STRR-M3 800 13" diameter plastic tape and reel VS-30CTH02-1-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information D2PAK (TO-263AB) www.vishay.com/doc?96164 TO-262AA www.vishay.com/doc?96165 D2PAK (TO-263AB) www.vishay.com/doc?95444 TO-262AA www.vishay.com/doc?95443 www.vishay.com/doc?96424 Revision: 21-Dec-2021 Document Number: 96234 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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