VS-30CTH02HN3

VS-30CTH02HN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 FRED Pt® FEATURES 4 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 1 TO-220AB 2 3 • Fully isolated package (VINS = 2500 VRMS) • Designed and qualified JEDEC®-JESD 47 Base common cathode 4 Available to • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 Common cathode 3 Anode 1 Anode according DESCRIPTION / APPLICATIONS 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. VS-30CTH02HN3 PRODUCT SUMMARY Package TO-220AB IF(AV) 2 x 15 A VR 200 V VF at IF 0.78 V The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage TEST CONDITIONS VALUES UNITS 200 V VRRM per diode Average rectified forward current IF(AV) per device Non-repetitive peak surge current IFSM Operating junction and storage temperatures TC = 159 °C 15 A 30 TJ = 25 °C 200 TJ, TStg -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 15 A - 0.92 1.05 IR = 100 μA IF = 15 A, TJ = 125 °C - 0.78 0.85 VR = VR rated - - 10 TJ = 125 °C, VR = VR rated - 5 300 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 200 V - 57 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 03-Jul-17 Document Number: 96116 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02HN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - - 35 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - - 30 TJ = 25 °C - 26 - IF = 15 A dIF/dt = 200 A/μs VR = 160 V TJ = 125 °C Peak recovery current Reverse recovery charge Qrr ns - 40 - - 2.8 - TJ = 125 °C - 6.0 - TJ = 25 °C - 37 - TJ = 125 °C - 120 - MIN. TYP. MAX. UNITS -55 - 175 °C - - 1.1 °C/W - 2 - g TJ = 25 °C IRRM UNITS A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to case TEST CONDITIONS TJ, TStg per diode RthJC Mounting surface, flat, smooth, and greased Approximate weight Mounting torque Marking device - 0.07 - oz. 6 - 12 kgf · cm 5 - 10 (lbf · cm) Case style TO-220AB 30CTH02H 100 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.4 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.0001 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 03-Jul-17 Document Number: 96116 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02HN3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 50 100 150 200 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 25 Average Power Loss (W) Allowable Case Temperature (°C) 180 170 DC Square wave (D = 0.50) Rated VR applied 160 150 RMS limit 20 15 10 5 DC See note (1) 140 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 03-Jul-17 Document Number: 96116 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02HN3 www.vishay.com Vishay Semiconductors 100 1000 IF = 15 A trr (ns) Qrr (nC) IF = 15 A 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 VR = 160 V TJ = 125 °C TJ = 25 °C 10 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 03-Jul-17 Document Number: 96116 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30CTH02HN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 C T H 02 H N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - C = common cathode 4 - T = TO-220 5 - H = hyperfast recovery 6 - Voltage rating (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30CTH02HN3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-220AB www.vishay.com/doc?95222 TO-220AB-N3 www.vishay.com/doc?95028 Revision: 03-Jul-17 Document Number: 96116 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L (b, b2) Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead tip Conforms to JEDEC® outline TO-220AB SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 A1 1.14 1.40 0.045 0.055 NOTES SYMBOL MILLIMETERS INCHES NOTES MIN. MAX. MIN. MAX. D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 A2 2.56 2.92 0.101 0.115 E1 6.86 8.89 0.270 0.350 6 b 0.69 1.01 0.027 0.040 E2 - 0.76 - 0.030 7 b1 0.38 0.97 0.015 0.038 4 e 2.41 2.67 0.095 0.105 b2 1.20 1.73 0.047 0.068 e1 4.88 5.28 0.192 0.208 b3 1.14 1.73 0.045 0.068 4 H1 5.84 6.86 0.230 0.270 c 0.36 0.61 0.014 0.024 L 13.52 14.02 0.532 0.552 c1 0.36 0.56 0.014 0.022 4 L1 3.32 3.82 0.131 0.150 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118 6, 7 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Revision: 06-Mar-2020 Document Number: 95222 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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