VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
2
• High frequency operation
1
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
1
3
D2PAK
(TO-263AB)
2
TO-262AA
3
Base
common
cathode
2
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-30CTQ...S-M3
VS-30CTQ...-1-M3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
80 V, 100 V
VF at IF
0.67 V
IRM
7.0 mA at 125 °C
TJ max.
175 °C
EAS
Package
Circuit configuration
7.5 mJ
D2PAK
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
UNITS
30
A
80/100
V
850
A
0.67
V
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30CTQ080S-M3
VS-30CTQ080-1-M3
VS-30CTQ100S-M3
VS-30CTQ100-1-M3
UNITS
80
100
V
Revision: 21-Dec-2021
Document Number: 94938
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VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
TEST CONDITIONS
VALUES
per device
per leg
UNITS
30
IF(AV)
50 % duty cycle at TC = 129 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
15
Following any rated load
condition and with rated
VRRM applied
A
850
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
Repetitive avalanche current per leg
10 ms sine or 6 ms rect. pulse
275
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Maximum forward voltage drop per leg
See fig. 1
VFM (1)
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
Maximum reverse leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
VALUES
UNITS
0.86
1.05
V
0.67
0.82
0.55
7.0
mA
Maximum junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
500
pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
VALUES
UNITS
-55 to 175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
3.25
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
1.63
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
Approximate weight
Mounting torque
0.50
minimum
maximum
0.07
oz.
6 (5)
kgf ⋅ cm
(lbf ⋅ in)
12 (10)
Case style
D2PAK
(TO-263AB)
Marking device
Case style TO-262AA
g
30CTQ080S
30CTQ100S
30CTQ080-1
30CTQ100-1
Revision: 21-Dec-2021
Document Number: 94938
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
Vishay Semiconductors
100
1000
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
1
0.0001
0.5
0
1.0
1.5
2.0
2.5
0
20
VFM - Forward Voltage Drop (V)
60
40
80
100
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25°C
100
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
0.1
0.01
0.001
0.00001
t1
Single pulse
(thermal resistance)
0.0001
0.001
t2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 21-Dec-2021
Document Number: 94938
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VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
Vishay Semiconductors
180
7
170
6
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
160
150
140
Square wave (D = 0.50)
80 % rated VR applied
130
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
5
RMS limit
4
DC
3
2
1
See note (1)
100
0
0
2
4
6
8
12
10
14
2
0
4
6
8
10
12
IF(AV - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
(1)
Revision: 21-Dec-2021
Document Number: 94938
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CTQ...S-M3, VS-30CTQ...-1-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
C
T
Q
100
S
1
2
3
4
5
6
7
TRL -M3
8
1
-
Vishay Semiconductors product
2
-
Current rating (30 A)
3
-
Circuit configuration: C = common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
9
080 = 80 V
100 = 100 V
S = D2PAK (TO-263AB)
-1 = TO-262AA
8
-
None = tube
TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-30CTQ080S-M3
50
Antistatic plastic tubes
VS-30CTQ080STRL-M3
800
13" diameter plastic tape and reel
VS-30CTQ080STRR-M3
800
13" diameter plastic tape and reel
VS-30CTQ100S-M3
50
Antistatic plastic tubes
VS-30CTQ100STRL-M3
800
13" diameter plastic tape and reel
VS-30CTQ100STRR-M3
800
13" diameter plastic tape and reel
VS-30CTQ080-1-M3
50
Antistatic plastic tubes
VS-30CTQ100-1-M3
50
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D2PAK (TO-263AB)
www.vishay.com/doc?96164
TO-262AA
www.vishay.com/doc?96165
D2PAK (TO-263AB)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 21-Dec-2021
Document Number: 94938
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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