30CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 30 A
FEATURES
Base 2
common
cathode
Anode
TO-220AB
Anode
2
1 Common 3
cathode
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175 °C high performance Schottky diode
Very low forward voltage drop
Extremely low reverse leakage
Optimized VF vs. IR trade off for high efficiency
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Increased ruggedness for reverse avalanche capability
RBSOA available
Negligible switching losses
Submicron trench technology
Full lead (Pb)-free and RoHS compliant devices
Designed and qualified for industrial level
RoHS
COMPLIANT
APPLICATIONS
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PRODUCT SUMMARY
IF(AV)
30 A
VR
100 V
High efficiency SMPS
Automotive
High frequency switching
Output rectification
Reverse battery protection
Freewheeling
Dc-to-dc systems
Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
30
A
Rectangular waveform
IF(AV)
VRRM
100
VF
15 Apk, TJ = 125 °C (per leg)
TJ
Range
V
0.67
- 55 to 175
°C
30CTT100
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
TEST CONDITIONS
TJ = 25 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per leg
per device
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 144 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 1.1 A, L = 60 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
Document Number: 94558
Revision: 19-Feb-08
10 ms sine or 6 ms rect. pulse
For technical questions, contact: diodes-tech@vishay.com
VALUES
UNITS
15
30
920
A
240
36
mJ
IAS at
TJ max.
A
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30CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Forward voltage drop per leg
VFM
(1)
30 A
15 A
30 A
IRM (1)
Reverse leakage current per leg
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TYP.
MAX.
-
0.81
UNITS
-
0.92
-
0.67
-
0.79
-
120
μA
-
5
mA
V
Junction capacitance per leg
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
550
-
pF
Series inductance per leg
LS
Measured lead to lead 5 mm from package body
8.0
-
nH
-
10 000
V/μs
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
2.5
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.5
°C/W
Approximate weight
Mounting torque
2
g
0.07
oz.
minimum
6 (5)
kgf · cm
maximum
12 (10)
(lbf · in)
Case style
TO-220AB
Marking device
30CTT100
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94558
Revision: 19-Feb-08
30CTT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 30 A
100
100
Reverse Current - IR (mA)
175°C
150°C
125°C
1
100°C
0.1
75°C
50°C
0.01
25°C
0.001
0.0001
0
20
40
60
80
100
120
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 125°C
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Tj = 175°C
10
Tj = 25°C
1
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
Forward Voltage Drop - VFM (V)
40
60
80
100
120
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.75
1
D = 0.5
0.1
0.01
0.001
1E-05
D = 0.33
D = 0.25
D = 0.2
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94558
Revision: 19-Feb-08
For technical questions, contact: diodes-tech@vishay.com
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3
30CTT100
High Performance
Schottky Generation 5.0, 30 A
Vishay High Power Products
15
160
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
180
DC
140
Square wave (D=0.50)
80% rated Vr applied
120
180°
120°
90°
60°
30°
12
9
RMS Limit
DC
6
3
see note (1)
0
100
0
5
10
15
20
0
25
5
10
15
20
25
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - IFSM (A)
Average Forward Current - IF(AV)(A)
1000
100
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
(1)
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94558
Revision: 19-Feb-08
30CTT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 30 A
Avalanche Current (A)
100
Tj = 25°C
10
Tj = 125°C
1
Tj = 175°C
0.1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Avalanche Energy (mJ)
100
Tj = 25°C
10
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94558
Revision: 19-Feb-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
30CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 30 A
ORDERING INFORMATION TABLE
Device code
30
C
T
T
100
1
2
3
4
5
1
-
Current rating (30 A)
2
-
Circuit configuration:
3
-
Package:
C = Common cathode
T = TO-220
4
-
T = Trench
5
-
Voltage code (100 V)
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95222
Part marking information
http://www.vishay.com/doc?95225
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6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94558
Revision: 19-Feb-08
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