VS-30EPF02-M3

VS-30.PF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 30 A FEATURES • Glass passivated pellet chip junction • 150 °C max. operating junction temperature 1 1 • Low forward voltage drop and short reverse recovery time 2 3 3 TO-247AC 2L TO-247AC 3L Available to 2 2 1 Cathode according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode Base cathode • Designed and qualified JEDEC®-JESD 47 APPLICATIONS 3 Anode Anode 1 VS-30EPF0... Anode 3 VS-30APF0... These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-30EPF06-M3 and VS-30APF06-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. PRIMARY CHARACTERISTICS IF(AV) 30 A VR 200 V, 400 V, 600 V VF at IF 1.41 V IFSM 320 A trr 60 ns TJ max. 150 °C Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 30 A VRRM 200 to 600 V IFSM 320 A VF 10 A, TJ = 25 °C 1.2 V trr 1 A, 100 A/μs 60 ns -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VS-30EPF02-M3, VS-30APF02-M3 200 300 VS-30EPF04-M3, VS-30APF04-M3 400 500 VS-30EPF06-M3, VS-30APF06-M3 600 700 TJ VOLTAGE RATINGS PART NUMBER 5 Revision: 29-Nov-2019 Document Number: 93693 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF0.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 98 °C, 180° conduction half sine wave 30 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t UNITS 10 ms sine pulse, rated VRRM applied 270 10 ms sine pulse, no voltage reapplied 320 10 ms sine pulse, rated VRRM applied 365 10 ms sine pulse, no voltage reapplied 515 t = 0.1 ms to 10 ms, no voltage reapplied 5150 A2√s VALUES UNITS A A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 30 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V mΩ 0.9 V 0.1 VR = Rated VRRM TJ = 150 °C 1.41 12.5 mA 5.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 100 A/μs 25 °C Typical VALUES UNITS 160 ns 10 A 1.25 μC IFM trr ta tb t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS DC operation UNITS -40 to +150 °C 0.8 °C/W 40 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 30EPF02 Case style TO-247AC 2L 30EPF04 30EPF06 Marking device 30APF02 Case style TO-247AC 3L 30APF04 30APF06 Revision: 29-Nov-2019 Document Number: 93693 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF0.-M3 Series www.vishay.com Vishay Semiconductors 45 30.PF.. Series RthJC (DC) = 0.8 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (°C) 150 130 Ø Conduction angle 120 110 30° 60° 100 90° 120° 180° 5 0 15 10 25 20 30 30 DC 25 20 RMS limit 15 Ø Conduction period 10 30.PF.. Series TJ = 150 °C 5 35 0 5 10 20 15 25 30 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 300 150 30.PF.. Series RthJC (DC) = 0.8 K/W 140 130 260 Ø Conduction period 120 30° 110 60° 90° 100 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 280 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) 35 0 90 240 220 200 180 160 140 120 100 120° VS-30.PF.. Series 80 DC 180° 60 90 0 5 10 15 20 25 30 35 40 45 50 1 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 350 35 180° 120° 90° 60° 30° 30 25 RMS limit 20 15 Ø 10 Conduction angle 5 0 5 10 15 20 250 200 150 100 50 30.PF.. Series TJ = 150 °C 0 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 300 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180° 120° 90° 60° 30° 40 25 VS-30.PF.. Series 0 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Nov-2019 Document Number: 93693 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF0.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 30.PF.. Series 1 0 1 2 3 4 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics trr - Typical Reverse Recovery Time (µs) 30.PF.. Series TJ = 25 °C 0.15 4.0 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 30 A IFM = 5 A IFM = 1 A 0.10 0.05 0 IFM = 20 A 3.0 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A 0.5 IFM = 1 A 0 0 200 400 600 800 1000 0 200 400 800 600 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 10 0.5 30.PF.. Series TJ = 150 °C 0.4 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 30.PF.. Series TJ = 150 °C 9 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) 30.PF.. Series TJ = 25 °C 3.5 Qrr - Typical Reverse Recovery Charge (µC) 0.20 0.1 IFM = 30 A 8 7 IFM = 20 A 6 5 IFM = 10 A 4 3 IFM = 5 A 2 1 IFM = 1 A 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 29-Nov-2019 Document Number: 93693 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF0.-M3 Series www.vishay.com Vishay Semiconductors 70 100 30.PF.. Series TJ = 25 °C 30.PF.. Series TJ = 150 °C IFM = 30 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 60 IFM = 20 A 50 40 IFM = 10 A 30 IFM = 5 A 20 IFM = 1 A 10 IFM = 30 A 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) dI/dt - Rate of Fall of Forward Current (A/µs) 10 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Steady state value (DC operation) 0.1 30.PF.. Series Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 29-Nov-2019 Document Number: 93693 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF0.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E P F 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode, 2 pins A = single diode, 3 pins 4 - Package: P = TO-247AC 3L / TO-247AC 2L 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - Environmental digit: F = fast recovery 02 = 200 V 04 = 400 V 06 = 600 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30EPF02-M3 25 500 Antistatic plastic tubes VS-30APF02-M3 25 500 Antistatic plastic tubes VS-30EPF04-M3 25 500 Antistatic plastic tubes VS-30APF04-M3 25 500 Antistatic plastic tubes VS-30EPF06-M3 25 500 Antistatic plastic tubes VS-30APF06-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AC 2L www.vishay.com/doc?96144 TO-247AC 3L www.vishay.com/doc?96138 TO-247AC 2L www.vishay.com/doc?95648 TO-247AC 3L www.vishay.com/doc?95007 Revision: 29-Nov-2019 Document Number: 93693 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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