VS-30ETU12THN3
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Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
Base cathode
2
• Ultrafast and soft recovery
2
• Optimized forward voltage drop
• 175 °C maximum operating junction temperature
• Polyimide passivation
1
1
Cathode
3
2L TO-220AC
• Rugged design
3
Anode
• Good thermal performance
• AEC-Q101 qualified, meets JESD 201 class 2
whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VR
1200 V
VF at IF at 125 °C
2.05 V
trr
49 ns
TJ max.
175 °C
Package
2L TO-220AC
Circuit configuration
Single
DESCRIPTION / APPLICATIONS
Ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop, recovery time, and
soft recovery. Polyimide passivated, planar structure, and
the platinum doped life time control guarantee, ruggedness,
reliability characteristics, and solid value proposition for
efficiency and thermal performance.
These devices are intended for use in boost stage in the
AC/DC section of SMPS, high frequency output rectification
of battery charger, inverters for solar inverters, or as
freewheeling diodes in motor drive.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
Repetitive peak forward current
IFRM
Non-repetitive peak surge current
Operating junction and storage temperature
IFSM
TEST CONDITIONS
VALUES
UNITS
1200
V
TC = 100 °C, D = 0.50
TC = 25 °C, tp = 10 ms, sine wave
TJ, TStg
30
A
60
A
240
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR,
VR
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 30 A
-
2.15
2.68
IF = 30 A, TJ = 125 °C
-
2.05
2.45
VR = VR rated
-
-
145
TJ = 125 °C, VR = VR rated
-
-
320
IR = 500 μA
UNITS
V
Forward voltage
VF
Reverse leakage current
IR
Junction capacitance
CT
VR = 200 V
-
29
-
pF
Series inductance
LS
Measured to lead 5 mm from package body
-
8
-
nH
μA
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
TEST CONDITIONS
-
49
-
TJ = 25 °C
-
220
-
TJ = 125 °C
-
356
-
-
8.2
-
-
13.3
-
TJ = 25 °C
-
900
-
TJ = 125 °C
-
2388
-
MIN.
TYP.
MAX.
IF = 30 A
dIF/dt = 100 A/μs
VR = 390 V
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance, junction to case
RthJC
-
-
0.8
Thermal resistance, junction to ambient
RthJA
Typical socket mount
-
-
54
Thermal resistance, case to heatsink
RthCS
Mounting surface, flat, smooth, and greased
-
-
0.4
-
2.0
-
-
Weight
Mounting torque
Maximum junction and storage
temperature range
TJ, TStg
°C/W
g
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
-55
-
175
°C
Case style: 2L TO-220AC
30ETU12TH
1000
100
TJ = 175 °C
10
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
UNITS
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 150 °C
100
10
TJ = 125 °C
TJ = 25 °C
1
0.1
0.01
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
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CT - Junction Capacitance (pF)
1000
100
10
0
200
400
600
800
1000
1200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
170
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
150
DC
140
130
120
110
Square wave (D = 0.50)
rated VR applied
100
90
80
120
RMS limit
100
80
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
60
40
20
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
45
50
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
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300
4000
TJ = 125 °C
TJ = 25 °C
250
3500
50 A
200
Qrr (nC)
trr (ns)
30 A
50 A
150
3000
30 A
2500
15 A
100
2000
50
15 A
1500
0
100
200
300
400
500
0
100
dIF/dt (A/μs)
300
400
500
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 10 - Typical Stored Charge vs. dIF/dt
25
450
TJ = 25 °C
TJ = 125 °C
400
350
20
50 A
15
30 A
30 A
300
Irec (A)
trr (ns)
200
50 A
250
15 A
200
15 A
10
150
5
100
0
100
200
300
400
0
500
100
Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt
300
400
500
Fig. 11 - Typical Reverse Current vs. dIF/dt
35
1800
TJ = 25 °C
TJ = 125 °C
1600
30
1400
50 A
50 A
Irec (A)
Qrr (nC)
200
dIF/dt (A/μs)
dIF/dt (A/μs)
1200
30 A
25
30 A
20
1000
15 A
15
15 A
800
10
600
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 9 - Typical Stored Charge vs. dIF/dt
0
100
200
300
400
500
dIF/dt (A/μs)
Fig. 12 - Typical Reverse Current vs. dIF/dt
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(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 13 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
30
E
T
U
12
T
H
N3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating 30 = 30 A
3
-
E = single diode
4
-
Package: T = TO-220AC
5
-
U = ultrafast recovery
6
-
Voltage rating (12 = 1200 V)
7
-
T = True 2 pin TO-220
8
-
H = AEC-Q101 qualified
9
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30ETU12THN3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
2L TO-220AC
www.vishay.com/doc?96069
Part marking information
2L TO-220AC
www.vishay.com/doc?95391
Revision: 22-Oct-2019
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Outline Dimensions
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Vishay Semiconductors
2L TO-220AC
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
A
Thermal pad
E
A1
Q
(6)
H1
(7)
(6) D
H1
D2 (6)
Detail B
D1
1
2
(2) L1
C
E1 (6)
1
2
L
D
C
Base metal
D
C
L1 (2)
A
b1, b3
(4)
Section C - C and D - D
View A - A
A2
Plating
c1 (4)
c
c
2 x b 2 x b2
Detail B
e1
(b, b2)
0.015 M B A M
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
NOTES
A
4.25
4.65
0.167
0.183
E1
6.86
8.89
0.270
0.350
6
A1
1.14
1.40
0.045
0.055
E2
-
0.76
-
0.030
7
A2
2.56
2.92
0.101
0.115
e1
4.88
5.28
0.192
0.208
b
0.69
1.01
0.027
0.040
H1
5.84
6.86
0.230
0.270
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
4
4
c
0.36
0.61
0.014
0.024
c1
0.36
0.56
0.014
0.022
4
3
D
14.85
15.25
0.585
0.600
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
L
13.52
14.02
0.532
0.552
L1
3.32
3.82
0.131
0.150
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480"
Revision: 09-Sep-2019
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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