VS-30TPS12L-M3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• Designed
and
qualified
JEDEC® - JESD 47
• Flexible solution
rectification
1
for
according
reliable
AC
to
power
• Easy control peak current at charger power up to
reduce passive / electromechanical components
2
3
TO-247AD 3L
1 (K)
(G) 3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
PRIMARY CHARACTERISTICS
IT(AV)
20 A
VDRM/VRRM
1200 V
VTM
1.3 V
IGT
45 mA
TJ
-40 °C to +125 °C
Package
TO-247AD 3L
Circuit configuration
Single SCR
DESCRIPTION
The VS-30TPS12L-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
AEC-Q101 qualified P/N available (VS-30TPS12LHM3).
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
20
30
IRMS
UNITS
A
VRRM/VDRM
1200
V
ITSM
300
A
VT
1.3
V
dv/dt
20 A, TJ = 25 °C
500
V/μs
di/dt
150
A/μs
-40 to +125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1200
1300
10
TJ
VOLTAGE RATINGS
PART NUMBER
VS-30TPS12L-M3
Revision: 31-Jul-2018
Document Number: 95991
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VS-30TPS12L-M3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle
non-repetitive surge current
Maximum I2t for fusing
ITSM
I2t
TEST CONDITIONS
20
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
30
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
4420
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
20 A, TJ = 25 °C
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage
current
Maximum holding current
Maximum latching current
rt
VT(TO)
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dv/dt
Maximum rate of rise of turned-on current
di/dt
VALUES
TC = 95 °C, 180° conduction half sine wave
TJ = 125 °C
TJ = 25 °C
VR = rated VRRM / VDRM
TJ = 125 °C
A
A2s
A2s
1.3
V
12
m
1.0
V
0.5
10
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
150
Anode supply = 6 V, resistive load, TJ = 25 °C
200
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = open
UNITS
mA
500
V/μs
150
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+IGM
1.5
A
Maximum peak negative gate voltage
-VGM
10
V
Maximum average gate power
Maximum required DC gate current
to trigger
Maximum required DC gate voltage
to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = -10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = -10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
μs
110
Revision: 31-Jul-2018
Document Number: 95991
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS12L-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Maximum thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to 125
°C
0.8
DC operation
Mounting surface, smooth and greased
0.25
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Case style TO-247AD 3L
30TPS.. Series
R thJC (DC) = 0.8 °C/ W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
0
5
10
15
20
25
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Marking device
130
30TPS12L
60
180°
120°
90°
60°
30°
50
40
RMS Limit
30
20
Conduction Angle
30TPS.. Series
TJ= 125°C
10
0
0
Conduction Period
100
90
60°
90°
120°
180° DC
80
0
5
10
15
20
25
30
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
35
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
120
30°
10
15
20
25
30
Fig. 3 - On-State Power Loss Characteristics
30TPS.. Series
RthJC (DC) = 0.8 °C/ W
110
5
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
130
°C/W
40
80
DC
180°
120°
90°
60°
30°
60
40 RMS Limit
Conduction Period
20
30TPS.. Series
TJ = 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 31-Jul-2018
Document Number: 95991
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS12L-M3
Vishay Semiconductors
280
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
260
Initial TJ = 125°C
at
60 Hz 0.0083 s
240
at 50 Hz 0.0100 s
220
200
180
160
140
30TPS.. Series
120
1
10
100
300
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Ma intained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRMReapplied
280
260
240
220
200
180
160
140
30TPS.. Series
120
0.01
0.1
1
Pulse Train Duration (s)
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
TJ= 25°C
TJ= 125°C
100
10
30TPS.. Series
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 31-Jul-2018
Document Number: 95991
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VS-30TPS12L-M3
www.vishay.com
Vishay Semiconductors
Rec tangular gate p ulse
a )Rec ommend ed loa d line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommend ed load line for
= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a )
(b )
VGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
IGD
(4)
0.01
(1)
Frequency Limited by PG(AV)
30TPS.. Series
0.1
0.001
(2)
(3)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
12
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
4
-
5
-
T = Thyristor
P = TO-247 package
Type of silicon:
S = Standard recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
Package L = long lead
8
-
12 = 1200 V
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30TPS12L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
Part marking information
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 31-Jul-2018
Document Number: 95991
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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