VS-30TPS16-M3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• High voltage (up to 1600 V)
• Designed and qualified
JEDEC®-JESD 47
1
according
to
• 125 °C max. operating junction temperature
2
3
1 (K) (G) 3
TO-247AC 3L
Available
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
PRIMARY CHARACTERISTICS
IT(AV)
20 A
VDRM/VRRM
1600 V
VTM
1.3 V
IGT
45 mA
TJ
-40 °C to +125 °C
Package
TO-247AC 3L
Circuit configuration
Single SCR
DESCRIPTION
The VS-30TPS16... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
UNITS
20
A
IRMS
30
VRRM/VDRM
1600
V
ITSM
300
A
1.3
V
500
V/μs
VT
20 A, TJ = 25 °C
dV/dt
dI/dt
TJ
150
A/μs
-40 to +125
°C
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-30TPS16-M3
1600
1700
10
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VS-30TPS16-M3
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
4420
I2t
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
20 A, TJ = 25 °C
Threshold voltage
Maximum reverse and direct leakage
current
Maximum holding current
Maximum latching current
rt
VT(TO)
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
UNITS
20
30
Maximum I2t for fusing
On-state slope resistance
VALUES
A
A2s
A2s
1.3
V
12
m
1.0
V
0.5
10
150
mA
Anode supply = 6 V, resistive load, TJ = 25 °C
200
TJ = TJ maximum, linear to 80 % VDRM, Rg - k = open
500
V/μs
150
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
SYMBOL
TEST CONDITIONS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Anode supply = 6 V, resistive load, TJ = -10 °C
Maximum required DC gate current to
trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = -10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
μs
110
Revision: 26-Feb-2019
Document Number: 94387
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS16-M3
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Maximum thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to 125
°C
0.8
DC operation
Mounting surface, smooth and greased
0.2
6
g
0.21
oz.
minimum
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
Approximate weight
Mounting torque
Case style TO-247AC 3L
30TPS.. Series
R thJC (DC) = 0.8 °C/ W
120
Conduction Angle
110
30°
60°
90°
100
120°
180°
90
0
5
10
15
20
25
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Marking device
130
30TPS16
60
180°
120°
90°
60°
30°
50
40
RMS Limit
30
20
Conduction Angle
30TPS.. Series
TJ= 125°C
10
0
0
30TPS.. Series
RthJC (DC) = 0.8 °C/ W
120
Conduction Period
100
30°
90
60°
90°
120°
180° DC
80
0
5
10
15
20
25
30
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
10
15
20
25
30
Fig. 3 - On-State Power Loss Characteristics
35
Maximum Average On-state Power Loss (W)
Maximum Allow able Case Temperature (°C)
Fig. 1 - Current Rating Characteristics
110
5
Average On-state Current (A)
Average On-state Current (A)
130
°C/W
40
80
DC
180°
120°
90°
60°
30°
60
40 RMSLimit
Conduction Period
20
30TPS.. Series
TJ = 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 26-Feb-2019
Document Number: 94387
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VS-30TPS16-M3
Vishay Semiconductors
280
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
260
Initial TJ = 125°C
@60 Hz 0.0083 s
240
@50 Hz 0.0100 s
220
200
180
160
140
30TPS.. Series
120
1
10
300
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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280
260
240
Maximum Non Repetitive Surge Current
Versus Pulse Tra in Duration. Control
Of Conduc tion May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reap plied
Rated VRRMReapplied
220
200
180
160
140
30TPS.. Series
120
0.01
100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
TJ= 25°C
TJ= 125°C
100
10
30TPS.. Series
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/ W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 26-Feb-2019
Document Number: 94387
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VS-30TPS16-M3
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Vishay Semiconductors
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
IGD
(4)
0.01
(2)
(1)
Frequenc y Limited by PG(AV)
30TPS.. Series
0.1
0.001
(3)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
16
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
4
-
T = thyristor
Package:
P = TO-247AC 3L
5
-
Type of silicon:
S = standard recovery rectifier
6
-
7
-
Voltage rating (16 = 1600 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30TPS16-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96138
Part marking information
www.vishay.com/doc?95007
Revision: 26-Feb-2019
Document Number: 94387
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AC 3L
DIMENSIONS in millimeters and inches
A
A
E (3)
B
A2
S
R/2 (2)
(Datum B)
Ø P (6)
Ø P1
Ø K M DBM
A
Q
D2
2 x R (2)
D1 (4)
D
Thermal pad
2
1
4
D
3
L1 (5)
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
C
2x e
A1
b4
E1 (4)
0.01 M D B M
(b1, b3, b5)
Plating
View A - A
Base metal
D DE
(c)
c1
(b, b2, b4)
C
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
C
(4)
View B
Section C - C, D - D, E - E
SYMBOL
E
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q
Revision: 20-Jun-17
Document Number: 96138
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Disclaimer
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including but not limited to the warranty expressed therein.
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Revision: 01-Jan-2019
1
Document Number: 91000