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VS-30TPS16-M3

VS-30TPS16-M3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-247-3

  • 描述:

    SCR 1600V 30A TO-247

  • 数据手册
  • 价格&库存
VS-30TPS16-M3 数据手册
VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 (A) • High voltage (up to 1600 V) • Designed and qualified JEDEC®-JESD 47 1 according to • 125 °C max. operating junction temperature 2 3 1 (K) (G) 3 TO-247AC 3L Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge PRIMARY CHARACTERISTICS IT(AV) 20 A VDRM/VRRM 1600 V VTM 1.3 V IGT 45 mA TJ -40 °C to +125 °C Package TO-247AC 3L Circuit configuration Single SCR DESCRIPTION The VS-30TPS16... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 20 A IRMS 30 VRRM/VDRM 1600 V ITSM 300 A 1.3 V 500 V/μs VT 20 A, TJ = 25 °C dV/dt dI/dt TJ 150 A/μs -40 to +125 °C VOLTAGE RATINGS PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA VS-30TPS16-M3 1600 1700 10 Revision: 26-Feb-2019 Document Number: 94387 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle,  non-repetitive surge current ITSM TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 310 10 ms sine pulse, no voltage reapplied 442 4420 I2t Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 20 A, TJ = 25 °C Threshold voltage Maximum reverse and direct leakage current Maximum holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C UNITS 20 30 Maximum I2t for fusing On-state slope resistance VALUES A A2s A2s 1.3 V 12 m 1.0 V 0.5 10 150 mA Anode supply = 6 V, resistive load, TJ = 25 °C 200 TJ = TJ maximum, linear to 80 % VDRM, Rg - k = open 500 V/μs 150 A/μs VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Anode supply = 6 V, resistive load, TJ = -10 °C Maximum required DC gate current to trigger Maximum required DC gate  voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 60 Anode supply = 6 V, resistive load, TJ = 25 °C 45 Anode supply = 6 V, resistive load, TJ = 125 °C 20 Anode supply = 6 V, resistive load, TJ = -10 °C 2.5 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.9 4 μs 110 Revision: 26-Feb-2019 Document Number: 94387 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Maximum thermal resistance,  case to heatsink RthCS TEST CONDITIONS VALUES UNITS -40 to 125 °C 0.8 DC operation Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque Case style TO-247AC 3L 30TPS.. Series R thJC (DC) = 0.8 °C/ W 120 Conduction Angle 110 30° 60° 90° 100 120° 180° 90 0 5 10 15 20 25 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Marking device 130 30TPS16 60 180° 120° 90° 60° 30° 50 40 RMS Limit 30 20 Conduction Angle 30TPS.. Series TJ= 125°C 10 0 0 30TPS.. Series RthJC (DC) = 0.8 °C/ W 120 Conduction Period 100 30° 90 60° 90° 120° 180° DC 80 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 2 - Current Rating Characteristics 10 15 20 25 30 Fig. 3 - On-State Power Loss Characteristics 35 Maximum Average On-state Power Loss (W) Maximum Allow able Case Temperature (°C) Fig. 1 - Current Rating Characteristics 110 5 Average On-state Current (A) Average On-state Current (A) 130 °C/W 40 80 DC 180° 120° 90° 60° 30° 60 40 RMSLimit Conduction Period 20 30TPS.. Series TJ = 125°C 0 0 10 20 30 40 50 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 26-Feb-2019 Document Number: 94387 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16-M3 Vishay Semiconductors 280 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 260 Initial TJ = 125°C @60 Hz 0.0083 s 240 @50 Hz 0.0100 s 220 200 180 160 140 30TPS.. Series 120 1 10 300 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com 280 260 240 Maximum Non Repetitive Surge Current Versus Pulse Tra in Duration. Control Of Conduc tion May Not Be Maintained. Initial TJ= 125°C No Voltage Reap plied Rated VRRMReapplied 220 200 180 160 140 30TPS.. Series 120 0.01 100 Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 TJ= 25°C TJ= 125°C 100 10 30TPS.. Series 1 0 1 2 3 4 5 6 7 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/ W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 0.1 D = 0.08 Single Pulse 30TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 26-Feb-2019 Document Number: 94387 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 IGD (4) 0.01 (2) (1) Frequenc y Limited by PG(AV) 30TPS.. Series 0.1 0.001 (3) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 30 T P S 16 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: 4 - T = thyristor Package: P = TO-247AC 3L 5 - Type of silicon: S = standard recovery rectifier 6 - 7 - Voltage rating (16 = 1600 V) Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30TPS16-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96138 Part marking information www.vishay.com/doc?95007 Revision: 26-Feb-2019 Document Number: 94387 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000
VS-30TPS16-M3 价格&库存

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VS-30TPS16-M3
    •  国内价格
    • 1+31.21470
    • 5+24.20750
    • 13+22.87800
    • 100+22.24310

    库存:152

    VS-30TPS16-M3
      •  国内价格
      • 1+14.91480
      • 10+14.54760
      • 30+14.29920

      库存:18

      VS-30TPS16-M3
        •  国内价格
        • 675+16.21960

        库存:3375