VS-30TPS16L-M3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
FEATURES
2
(A)
• Designed and qualified
JEDEC® - JESD 47
according
to
• Flexible solution for reliable AC power
rectification
1
2
3
1 (K) (G) 3
TO-247AD 3L
• Easy control peak current at charger power
up to reduce passive / electromechanical components
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
IT(AV)
20 A
VDRM/VRRM
1600 V
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding and battery
charge
VTM
1.3 V
IGT
45 mA
TJ
-40 °C to +125 °C
Package
TO-247AD 3L
Circuit configuration
Single SCR
DESCRIPTION
The VS-30TPS16L-M3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
AEC-Q101 qualified P/N available (VS-30TPS16LHM3).
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
20
30
IRMS
VRRM/VDRM
ITSM
VT
VALUES
20 A, TJ = 25 °C
dv/dt
di/dt
UNITS
A
1600
V
300
A
1.3
V
500
V/μs
150
A/μs
-40 to +125
°C
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1600
1700
10
TJ
VOLTAGE RATINGS
PART NUMBER
VS-30TPS16L-M3
Revision: 31-Jul-2018
Document Number: 95992
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
250
10 ms sine pulse, no voltage reapplied
300
10 ms sine pulse, rated VRRM applied
310
10 ms sine pulse, no voltage reapplied
442
4420
I2t
Maximum I2t for fusing
I2t
t = 0.1 to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
20 A, TJ = 25 °C
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
rt
VT(TO)
IRM/IDM
IH
IL
Maximum rate of rise of off-state voltage
dv/dt
Maximum rate of rise of turned-on current
di/dt
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM/VDRM
A
A2s
A2s
1.3
V
12
m
1.0
V
0.5
10
Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C
150
Anode supply = 6 V, resistive load, TJ = 25 °C
200
TJ = TJ maximum, linear to 80 % VDRM, Rg - k = open
UNITS
20
30
Maximum I2t for fusing
On-state slope resistance
VALUES
mA
500
V/µs
150
A/µs
VALUES
UNITS
TRIGGERING
PARAMETER
TEST CONDITIONS
SYMBOL
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+IGM
1.5
A
Maximum peak negative gate voltage
-VGM
10
V
Maximum peak gate power
Maximum required DC gate current to trigger
IGT
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = -10 °C
60
Anode supply = 6 V, resistive load, TJ = 25 °C
45
Anode supply = 6 V, resistive load, TJ = 125 °C
20
Anode supply = 6 V, resistive load, TJ = -10 °C
2.5
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
0.9
4
μs
110
Revision: 31-Jul-2018
Document Number: 95992
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30TPS16L-M3
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Maximum thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to 125
°C
0.8
DC operation
Mounting surface, smooth and greased
0.25
6
Approximate weight
minimum
Mounting torque
maximum
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
R thJC (DC) = 0.8 °C/W
120
Conduction Angle
110
60°
90°
100
120°
180°
90
0
oz.
kgf · cm
(lbf · in)
5
10
15
20
30TPS16L
60
180°
120°
90°
60°
30°
50
40
RMS Limit
30
20
Conduction Angle
10
TJ = 125 °C
0
25
0
Fig. 1 - Current Rating Characteristics
R thJC (DC) = 0.8 °C/W
120
Conduction Period
100
30°
90
60°
90°
120°
180°
DC
80
5
10
15
20
25
30
10
15
20
25
30
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
130
110
5
Average On-state Current (A)
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
0.21
12 (10)
130
30°
g
6 (5)
Case style TO-247AD 3L
Marking device
0
°C/W
40
35
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
80
DC
180°
120°
90°
60°
30°
60
40 RMS limit
Conduction period
20
T J = 125 °C
0
0
10
20
30
40
50
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 31-Jul-2018
Document Number: 95992
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VS-30TPS16L-M3
Vishay Semiconductors
300
280
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
260
240
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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220
200
180
160
140
120
1
10
280
260
240
Maximum non repetitive surge current
vs. pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
220
200
180
160
140
120
0.01
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
TJ = 25 °C
TJ = 125 °C
100
10
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 31-Jul-2018
Document Number: 95992
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VS-30TPS16L-M3
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Vishay Semiconductors
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
0.01
(2)
(1)
Frequenc y Limited by PG(AV)
30TPS.. Series
0.1
0.001
(3)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
16
L
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration:
T = thyristor
4
-
5
-
Package:
P = TO-247
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating (16 = 1600 V)
7
-
Package L = long lead
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-30TPS16L-M3
25
500
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95626
Part marking information
www.vishay.com/doc?95007
Revision: 31-Jul-2018
Document Number: 95992
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000