VS-30WQ04FNTRLHM3

VS-30WQ04FNHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.5 A FEATURES Base cathode 4, 2 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Popular D-PAK outline 1 Anode D-PAK (TO-252AA) 3 Anode • Small foot print, surface mountable • High frequency operation • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 3.5 A VR 40 V VF at IF See Electrical table IRM 24 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 8 mJ • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-30WQ04FNHM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS Rectangular waveform CHARACTERISTICS 3.5 A 40 V IFSM tp = 5 μs sine 500 A VF 3 Apk, TJ = 125 °C IF(AV) VRRM TJ 0.49 V -40 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-30WQ04FNHM3 UNITS 40 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL  IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 135 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 3.5 500 A Maximum peak one cycle non-repetitive surge current. See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse 80 Revision: 20-May-15 Document Number: 94733 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 6A 3A TJ = 125 °C 6A Maximum reverse leakage current See fig. 2 IRM (1) Threshold voltage VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance LS Maximum voltage rate of change dV/dt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES UNITS 0.53 0.67 V 0.49 0.62 2 mA 24 0.34 V 37.33 m 189 pF 5.0 nH 10 000 V/μs VALUES UNITS -40 to +150 °C 4.7 °C/W Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and  storage temperature range TJ (1), TStg Maximum thermal resistance,  junction to case RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK  0.3 g 0.01 oz. 30WQ04FNH Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 20-May-15 Document Number: 94733 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNHM3 Vishay Semiconductors 100 100 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 5 10 15 20 25 30 35 40 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 PDM 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 20-May-15 Document Number: 94733 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNHM3 Vishay Semiconductors 3.0 155 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 145 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 120 115 2.5 2.0 RMS limit 1.5 1.0 DC 0.5 See note (1) 0 110 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IF (AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non- Repetitive Surge Current (A) IF (AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 20-May-15 Document Number: 94733 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30WQ04FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 W Q 04 FN TRL H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (3.5 A) 3 - Package identifier: W = D-PAK 4 - Schottky “Q” series 5 - Voltage rating (04 = 40 V) 6 - FN = TO-252AA (D-PAK) 7 - None = Tube TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - H = AEC-Q101 qualified 9 - Environmental digit: M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30WQ04FN-M3 75 3000 Antistatic plastic tube VS-30WQ04FNTRHM3 2000 2000 13" diameter reel VS-30WQ04FNTRRHM3 3000 3000 13" diameter reel VS-30WQ04FNTRLHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95630 Revision: 20-May-15 Document Number: 94733 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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