VS-30WQ10FNHM3
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Vishay Semiconductors
Schottky Rectifier, 3.5 A
FEATURES
Base
cathode
4, 2
• Low forward voltage drop
• Guard ring for enhanced ruggedness and
long term reliability
• Popular D-PAK outline
1
Anode
D-PAK (TO-252AA)
3
Anode
• Small foot print, surface mountable
• High frequency operation
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
PRODUCT SUMMARY
Package
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
D-PAK (TO-252AA)
IF(AV)
3.5 A
VR
100 V
VF at IF
See Electrical table
IRM
4.9 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
5 mJ
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30WQ10FNHM3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUES
UNITS
Rectangular waveform
3.5
A
100
V
IFSM
tp = 5 μs sine
440
A
VF
3 Apk, TJ = 125 °C
IF(AV)
CHARACTERISTICS
VRRM
TJ
0.63
V
- 40 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
VS-30WQ10FNHM3
UNITS
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
Revision: 21-Aug-13
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
IFSM
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
3.5
440
A
70
EAS
TJ = 25 °C, IAS = 1 A, L = 10 mH
5.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Document Number: 94731
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VS-30WQ10FNHM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
3A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
Maximum reverse leakage current
See fig. 2
IRM (1)
Threshold voltage
VF(TO)
Forward slope resistance
rt
Typical junction capacitance
CT
Typical series inductance
Maximum voltage rate of change
LS
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
UNITS
0.81
0.96
V
0.63
0.74
1
4.9
mA
0.48
V
30.89
m
92
pF
5.0
nH
10 000
V/μs
VALUES
UNITS
- 40 to 150
°C
4.7
°C/W
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
RthJC
TEST CONDITIONS
DC operation
See fig. 4
Approximate weight
Marking device
Case style D-PAK
0.3
g
0.01
oz.
30WQ10FNH
Note
(1)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Revision: 21-Aug-13
Document Number: 94731
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30WQ10FNHM3
Vishay Semiconductors
10
100
TJ = 150 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
0.001
TJ = 25 °C
0.0001
1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
3.2
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
20
40
60
80
100
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
PDM
1
t1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
t2
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 21-Aug-13
Document Number: 94731
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VS-30WQ10FNHM3
Vishay Semiconductors
155
3.5
150
3.0
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
145
DC
140
135
Square wave (D = 0.50)
80 % rated VR applied
130
125
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
2.5
RMS Limit
2.0
1.5
DC
1.0
0.5
See note (1)
115
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
1
2
3
4
5
IF (AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non- Repetitive Surge Current (A)
IF (AV) - Average Forward Current (A)
1000
100
At any rated load condition
and with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Aug-13
Document Number: 94731
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30WQ10FNHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
W
Q
10
FN
TRL
H
M3
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Current rating (3.5 A)
3
-
Package identifier:
4
-
Schottky “Q” series
5
-
Voltage rating (10 = 100 V)
6
-
FN = TO-252AA (D-PAK)
7
-
W = D-PAK
None = Tube
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
8
-
9
-
H = AEC-Q101 qualified
Environmental digit:
M3 = Halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-30WQ10FNHM3
VS-30WQ10FNTRHM3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
2000
2000
13" diameter reel
VS-30WQ10FNTRRHM3
3000
3000
13" diameter reel
VS-30WQ10FNTRLHM3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95519
Part marking information
www.vishay.com/doc?95518
Packaging information
www.vishay.com/doc?95033
Revision: 21-Aug-13
Document Number: 94731
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DPAK (TO-252AA)
DIMENSIONS in millimeters and inches
Pad layout
E
A
0.265 (6.74) min.
b3
E1
c2
L3
4
4
Seating
plane
D
1
2
L5
0.245 (6.23) min.
H
L4
3
D1
3
1
2
0.488 (12.40)
0.409 (10.40)
Detail “C”
b2
0.089 (2.28) min.
c
b
e
L1
e1
Lead tip
0.06 (1.524) min.
Detail “C”
Gauge plane
L2
0.093 (2.38)
0.085 (2.18)
A1
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
3
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
5
D1
5.21
-
0.205
-
3
E
6.35
6.73
0.250
0.265
5
E1
4.32
-
0.170
-
3
2.74 BSC
L2
L3
c2
2.29 BSC
INCHES
MIN.
0.51 BSC
0.89
1.27
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(5) Outline conforms to JEDEC® outline TO-252AA
Revision: 06-Jun-17
Document Number: 95519
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
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Document Number: 91000