VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
D2PAK
FEATURES
TO-262
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
Base
common
cathode
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-32CTQ...S-M3
VS-32CTQ...-1-M3
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
IF(AV)
2 x 15 A
VR
25 V, 30 V
VF at IF
0.40 V
IRM typ.
97 mA at 125 °C
TJ max.
150 °C
EAS
13 mJ
Package
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
15 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
30
A
25, 30
V
900
A
0.40
V
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-32CTQ025SHM3
VS-32CTQ025-1HM3
VS-32CTQ030SHM3
VS-32CTQ030-1HM3
UNITS
25
30
V
Revision: 28-Jul-2020
Document Number: 95774
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VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
13
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
50 % duty cycle at TC = 115 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
30
Following any rated load
condition and with rated
VRRM applied
900
A
250
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
15 A
Maximum forward voltage drop
See fig. 1
VFM
(1)
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
Maximum reverse leakage current
IRM (1)
Typical reverse leakage current
IRM (1)
Threshold voltage
VF(TO)
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
Typical series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
VR = rated VR
TJ = 125 °C
TJ = 125 °C
VR = rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
UNITS
0.49
0.58
0.40
V
0.53
1.75
145
mA
97
mA
0.233
V
9.09
mΩ
1300
pF
8.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
See fig. 4
3.25
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
kgf ⋅ cm
maximum
12 (10)
(lbf ⋅ in)
Approximate weight
Mounting torque
°C/W
Case style TO-263AB (D2PAK)
Marking device
Case style TO-262AA
32CTQ025SH
32CTQ030SH
32CTQ025-1H
32CTQ030-1H
Revision: 28-Jul-2020
Document Number: 95774
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VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
5
10
15
20
25
30
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
25
35
30
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
0.1
t2
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 28-Jul-2020
Document Number: 95774
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VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series
Vishay Semiconductors
10
160
150
Average Power Loss (W)
Allowable Case Temperature (°C)
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140
DC
130
120
Square wave (D = 0.50)
80 % rated VR applied
110
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
RMS limit
6
DC
4
2
90
See note (1)
0
80
0
5
10
15
20
0
25
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 28-Jul-2020
Document Number: 95774
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VS-32CTQ...SHM3, VS-32CTQ...-1HM3 Series
www.vishay.com
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ORDERING INFORMATION TABLE
Device code
VS-
32
C
T
Q
030
S
TRL
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Current rating (30 A)
3
-
Circuit configuration: C = common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
• S = D2PAK
• -1 = TO-262
8
-
• None = tube
• TRL = tape and reel (left oriented - for D2PAK only)
• TRR = tape and reel (right oriented - for D2PAK only)
9
-
H = AEC-Q101 qualified
10
-
M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
025 = 25 V
030 = 30 V
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-32CTQ025SHM3
50
1000
Antistatic plastic tubes
VS-32CTQ025STRRHM3
800
800
13" diameter reel
VS-32CTQ025STRLHM3
800
800
13" diameter reel
VS-32CTQ025-1HM3
50
1000
Antistatic plastic tubes
VS-32CTQ030SHM3
50
1000
Antistatic plastic tubes
VS-32CTQ030STRRHM3
800
800
13" diameter reel
VS-32CTQ030STRLHM3
800
800
13" diameter reel
VS-32CTQ030-1HM3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Dimensions
TO-263AB (D2PAK)
www.vishay.com/doc?95046
TO-262AA
www.vishay.com/doc?95419
Part marking information
TO-263AB (D2PAK)
www.vishay.com/doc?95444
Part marking information
TO-262AA
www.vishay.com/doc?95443
Packaging information
www.vishay.com/doc?95032
Revision: 28-Jul-2020
Document Number: 95774
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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