VS-32CTQ030-M3

VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common cathode • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 2 Anode 3 TO-220AB 3L Anode 2 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 2 x 15 A VR 25 V, 30 V VF at IF 0.40 V IRM typ. 97 mA at 125 °C TJ max. 150 °C DESCRIPTION EAS 13 mJ Package 3L TO-220AB Circuit configuration Common cathode The VS-32CTQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES Rectangular waveform VRRM IFSM tp = 5 μs sine VF 15 Apk, TJ = 125 °C TJ Range UNITS 30 A 25/30 V 900 A 0.40 V -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-32CTQ025-M3 VS-32CTQ030-M3 UNITS 25 30 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current, see fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current, see fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 13 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 3 A Repetitive avalanche current 50 % duty cycle at TC = 115 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 30 900 A 250 Revision: 22-Dec-2021 Document Number: 96278 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 30 A 15 A TJ = 125 °C 30 A Maximum reverse leakage current IRM (1) Typical reverse leakage current IRM (1) Threshold voltage VF(TO) Forward slope resistance rt TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = 125 °C VR = Rated VR TJ = TJ maximum Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.49 0.58 V 0.40 0.53 1.75 mA 145 97 mA 0.233 V 9.09 mΩ 1300 pF 8.0 nH 10 000 V/µs VALUES UNITS -55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg RthJC DC operation See fig. 4 3.25 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque Marking device °C/W Case style 3L TO-220AB 32CTQ025 32CTQ030 Revision: 22-Dec-2021 Document Number: 96278 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ025-M3, VS-32CTQ030-M3 Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C TJ = 75 °C 1 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5 0 1.8 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 0.001 0.00001 PDM t1 Single pulse (thermal resistance) 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Dec-2021 Document Number: 96278 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors 10 150 Average Power Loss (W) Allowable Case Temperature (°C) 160 140 DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 100 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 8 6 RMS limit 4 DC 2 See note (1) 80 0 0 5 10 15 20 25 0 5 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 22-Dec-2021 Document Number: 96278 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 32 C T Q 030 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - Circuit configuration: C = common cathode 4 - Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage ratings 7 - Environmental digit 025 = 25 V 030 = 30 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-32CTQ025-M3 50 Antistatic plastic tubes VS-32CTQ030-M3 50 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96154 Part marking information www.vishay.com/doc?95028 Revision: 22-Dec-2021 Document Number: 96278 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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