VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
1
1
3
D2PAK
(TO-263AB)
2
TO-262AA
3
• Guard ring for enhanced ruggedness and long term
reliability
Base
common
cathode
2
Base
common
cathode
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-32CTQ...S-M3
VS-32CTQ...-1-M3
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VR
25 V, 30 V
VF at IF
0.40 V
IRM typ.
97 mA at 125°C
TJ max.
150 °C
EAS
13 mJ
Package
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
VALUES
UNITS
30
A
25, 30
V
A
IFSM
tp = 5 μs sine
900
VF
15 Apk, TJ = 125 °C
0.40
V
TJ
Range
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-32CTQ025S-M3
VS-32CTQ025-1-M3
VS-32CTQ030S-M3
VS-32CTQ030-1-M3
UNITS
25
30
V
Revision: 21-Dec-2021
Document Number: 94936
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VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
13
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
A
TEST CONDITIONS
VALUES
UNITS
Repetitive avalanche current
50 % duty cycle at TC = 115 °C, rectangular waveform
30
5 μs sine or 3 μs rect. pulse
900
Following any rated load
condition and with rated
VRRM applied
10 ms sine or 6 ms rect. pulse
A
250
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
30 A
15 A
TJ = 125 °C
30 A
Maximum reverse leakage current
IRM (1)
Typical reverse leakage current
IRM (1)
Threshold voltage
VF(TO)
Forward slope resistance
rt
Maximum junction capacitance per leg
CT
Typical series inductance per leg
LS
Maximum voltage rate of change
dV/dt
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
TJ = 125 °C
0.49
0.58
0.53
1.75
145
VR = Rated VR
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
97
mA
mA
0.233
V
9.09
mΩ
1300
pF
Measured lead to lead 5 mm from package body
Rated VR
V
0.40
8.0
nH
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
VALUES
UNITS
-55 to +150
°C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
See fig. 4
3.25
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
0.07
oz.
minimum
6 (5)
maximum
12 (10)
kgf ⋅ cm
(lbf ⋅ in)
Approximate weight
Mounting torque
°C/W
Case style D2PAK (TO-263AB)
Marking device
Case style TO-262AA
32CTQ025S
32CTQ030S
32CTQ025-1
32CTQ030-1
Revision: 21-Dec-2021
Document Number: 94936
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VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
Vishay Semiconductors
1000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
0.1
TJ = 50 °C
TJ = 25 °C
0.01
0.001
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
5
10
15
20
25
30
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
0
5
10
15
20
25
35
30
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
0.1
t2
0.01
0.001
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 21-Dec-2021
Document Number: 94936
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
Vishay Semiconductors
10
160
150
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
140
DC
130
120
Square wave (D = 0.50)
80 % rated VR applied
110
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
RMS limit
6
DC
4
2
90
See note (1)
0
80
0
5
10
15
20
0
25
5
10
15
20
25
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Dec-2021
Document Number: 94936
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
32
C
T
Q
030
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 A)
3
-
Circuit configuration: C = common cathode
4
-
T = TO-220
5
-
Schottky “Q” series
6
-
Voltage ratings
7
-
TRL -M3
8
9
025 = 25 V
030 = 30 V
S = D2PAK (TO-263AB)
-1 = TO-262AA
8
-
None = tube
TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-32CTQ025S-M3
50
Antistatic plastic tubes
VS-32CTQ025STRL-M3
800
13" diameter plastic tape and reel
VS-32CTQ025STRR-M3
800
13" diameter plastic tape and reel
VS-32CTQ030S-M3
50
Antistatic plastic tubes
VS-32CTQ030STRL-M3
800
13" diameter plastic tape and reel
VS-32CTQ030STRR-M3
800
13" diameter plastic tape and reel
VS-32CTQ025-1-M3
50
Antistatic plastic tubes
VS-32CTQ030-1-M3
50
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D2PAK (TO-263AB)
www.vishay.com/doc?96164
TO-262AA
www.vishay.com/doc?96165
D2PAK (TO-263AB)
www.vishay.com/doc?95444
TO-262AA
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 21-Dec-2021
Document Number: 94936
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
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Outline Dimensions
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Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC® outline TO-262
(Datum A) (2) (3)
E
A
A
c2
B
E
A
(3) L1
Seating
plane
D
1
2 3
C
L2
B
D1 (3)
B
C
L (2)
A
c
3 x b2
3xb
E1
A1
(3)
Section A - A
2xe
Plating
0.010 M A M B
(4)
b1, b3
Base
metal
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Lead tip
SYMBOL
c1
c
(4)
(b, b2)
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
0.190
NOTES
A
4.06
4.83
0.160
A1
2.03
3.02
0.080
0.119
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
D1
6.86
8.00
0.270
0.315
3
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
e
L
2.54 BSC
4
4
4
2
0.100 BSC
13.46
14.10
0.530
0.555
L1
-
L2
3.36
1.65
-
0.065
3.71
0.132
0.146
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
(5)
(6)
3
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum),
b (minimum) , D1 (minimum) and L2 where dimensions derived
the actual package outline
Revision: 11-Jul-2019
Document Number: 95419
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
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