VS-35EPF06L-M3

VS-35EPF06L-M3, VS-35APF06L-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 35 A FEATURES 2 1 1 2 3 3 TO-247AD 2L Base cathode 2 TO-247AD 3L Base cathode 2 • Very low forward voltage drop and short reverse recovery time • Glass passivated pellet chip junction • Designed and qualified according to JEDEC® - JESD 47 • Flexible solution for reliable AC power rectification • High surge, low VF rugged blocking diode for DC charging stations • AEC-Q101 qualified P/N available (VS-35EPF06LHM3, VS-35APF06LHM3) 1 Cathode 3 Anode VS-35EPF06L-M3 3 Anode 1 Anode VS-35APF06L-M3 PRIMARY CHARACTERISTICS IF(AV) 35 A VR 600 V VF at IF 1.27 V IFSM 320 A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION The VS-35EPF06L-M3 and VS-30APF06L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. trr 60 ns TJ max. 150 °C Snap factor 0.6 Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.    MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 35 A VRRM 600 V IFSM 320 A VF 15 A, TJ = 25 °C trr 1 A, 100 A /μs TJ 1.27 V 60 ns -40 to +150 °C VOLTAGE RATINGS PART NUMBER VRSM, MAXIMUM VRRM, MAXIMUM NON-REPETITIVE PEAK REVERSE PEAK REVERSE VOLTAGE VOLTAGE V V VS-35EPF06L-M3 600 700 VS-35APF06L-M3 600 700 IRRM AT 150 °C mA 6 Revision: 06-Jul-2018 Document Number: 95995 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-35EPF06L-M3, VS-35APF06L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 103 °C, 180° conduction half sine wave 35 Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 270 10 ms sine pulse, no voltage reapplied 320 UNITS A 10 ms sine pulse, rated VRRM applied 365 10 ms sine pulse, no voltage reapplied 515 t = 0.1 ms to 10 ms, no voltage reapplied 5150 A2s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 35 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C 1.46 V 12.5 m 0.90 V 0.1 VR = rated VRRM mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 20 Apk 100 A/μs 25 °C Typical VALUES UNITS 160 ns 10 A 1.25 μC IFM trr ta tb dir dt t Qrr IRM(REC) 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  unction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.6 °C/W 40 Mounting surface, smooth, and greased 0.25 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Approximate weight Mounting torque VALUES Case style TO-247AD 2L 35EPF06L Case style TO-247AD 3L 35APF06L Revision: 06-Jul-2018 Document Number: 95995 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-35EPF06L-M3, VS-35APF06L-M3 150 RthJC (DC) = 0.60 °C/W 140 130 Conduction angle 120 110 100 60° 90 120° 30° 90° 180° 80 0 5 10 15 20 25 30 35 40 90 180° 120° 90° 60° 30° 80 70 60 50 RMS limit 40 30 Conduction angle 20 10 TJ = 150 °C 0 0 10 20 30 40 50 60 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics RthJC (DC) = 0.60 °C/W 140 Ø 130 Conduction Period 120 110 100 30° DC 120° 60° 90 90° 180° 80 10 20 30 40 50 60 350 At any rated load condition and with rated VRRM applied following surge. 300 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 50 1 Fig. 2 - Current Rating Characteristics 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Average On-State Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 350 70 180° 120° 90° 60° 30° 60 50 300 Peak Half Sine Wave Forward Current (A) Max. Average On-State Power Loss (W) DC Average On-State Current (A) 150 0 Max. Average On-state Power Loss (W) Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Max. Allowable Case Temperature ( °C) Max. Allowable Case Temperature (°C) www.vishay.com 40 RMS limit 30 20 Conduction angle 10 0 10 20 200 150 100 50 TJ = 150 °C 0 250 Maximum non-repetitive surge current vs. pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 30 40 0 0.01 0.1 1 10 Average On-State Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 06-Jul-2018 Document Number: 95995 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-35EPF06L-M3, VS-35APF06L-M3 1000 4.0 IFM = 30 A TJ = 25 °C Qrr - Typical Reverse Recovery Charge (µC) 3.5 100 TJ = 25 °C TJ = 150 °C 10 1 IFM = 20 A 3.0 2.5 2.0 IFM = 10 A 1.5 1.0 IFM = 5 A 0.5 IFM = 1 A 0 0 1 2 3 4 0 5 200 400 1000 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 10 IFM = 30 A IFM = 20 A IFM = 10 A TJ = 25 °C 0.15 TJ = 150 °C 9 IFM = 5 A IFM = 1 A 0.10 0.05 IFM = 30 A 8 7 IFM = 20 A 6 5 IFM = 10 A 4 3 IFM = 5 A 2 1 IFM = 1 A 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 0.5 70 TJ = 150 °C TJ = 25 °C 60 0.4 Irr - Typical Reverse Recovery Current (A) trr - Typical Reverse Recovery Time (µs) 800 600 Instantaneous Forward Voltage (V) 0.20 trr - Typical Reverse Recovery Time (µs) Vishay Semiconductors Qrr - Typical Reverse Recovery Charge (µC) Instantaneous Forward Current (A) www.vishay.com IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.3 0.2 0.1 IFM = 30 A IFM = 20 A 50 40 IFM = 10 A 30 IFM = 5 A 20 IFM = 1 A 10 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Revision: 06-Jul-2018 Document Number: 95995 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-35EPF06L-M3, VS-35APF06L-M3 www.vishay.com Vishay Semiconductors 100 Irr - Typical Reverse Recovery Current (A) TJ = 150 °C IFM = 30 A 80 IFM = 20 A 60 IFM = 10 A 40 IFM = 5 A 20 IFM = 1 A 0 0 200 400 600 800 1000 dI/dt - Rate of Fall of Forward Current (A/µs) ZthJC - Transient Thermal Impedance (°C/W) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C 1 0.5 Steady state value (DC operation) 0.33 0.25 0.17 0.1 0.08 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 06-Jul-2018 Document Number: 95995 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-35EPF06L-M3, VS-35APF06L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 35 E P F 06 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (35 = 35 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - 5 - Package: P = TO-247AD Type of silicon: F = fast recovery rectifier 6 - Voltage code x 100 = VRRM 7 - L = long leads 8 - Environmental digit: 06 = 600 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-35EPF06L-M3 25 500 Antistatic plastic tubes VS-35APF06L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 06-Jul-2018 Document Number: 95995 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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