VS-3C16CP07L-M3

VS-3C16CP07L-M3 www.vishay.com Vishay Semiconductors 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 8 A FEATURES Base common cathode 2 1 1 Anode 2 3 TO-247AD 3L 2 3 Anode Common Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Application Notes • Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient, for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • MPS structure for high ruggedness to forward current surge events • Meets JESD 201 class 1A whisker test • Solder Bath temperature 275 °C maximum, 10 s per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 2x8A VR 650 V VF at IF at 150 °C 1.5 V TJ max. 175 °C IR at VR at 175 °C 1.9 μA QC (VR = 400 V) 22 nC Package TO-247AD 3L Circuit configuration Common cathode Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters. MECHANICAL DATA Case: TO-247AD 3L Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Mounting torque: 10 in-lbs maximum ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Peak repetitive reverse voltage Average rectified forward current, per leg DC blocking voltage VRRM IF(AV) VDC TC = 135 °C (DC) Repetitive peak forward current IFRM TC = 25 °C, f = 50 Hz, square wave, DC = 25 % Non-repetitive peak forward surge current, per leg IFSM Power dissipation, per leg Ptot (1) I2t value, per leg i Operating junction and storage temperatures 2 dt TC = 25 °C, tp = 10 ms, half sine wave TC = 110 °C, tp = 10 ms, half sine wave TC = 25 °C TC = 110 °C TC = 25 °C TC = 110 °C TJ(2), TStg VALUES UNITS 650 8 650 V A V 35 54 52 58 25 13.5 12.5 -55 to +175 A W A2s °C Notes (1) Based on maximum R th (2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA Revision: 07-Dec-2022 Document Number: 97043 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C16CP07L-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Forward voltage, per leg VF Reverse leakage current, per leg IR Total capacitance, per leg C Total capacitive charge, per leg QC MIN. TYP. MAX. IF = 8 A TEST CONDITIONS - 1.3 1.5 UNITS IF = 8 A, TJ = 150 °C - 1.5 1.8 IF = 8 A, TJ = 175 °C - 1.58 - VR = VR rated VR = VR rated, TJ = 150 °C VR = VR rated, TJ = 175 °C VR = 1 V, f = 1 MHz VR = 400 V, f = 1 MHz VR = 400 V, f = 1 MHz - 0.25 1.1 1.9 340 34 22 45 100 - nC MAX. UNITS V μA pF THERMAL - MECHANICAL SPECIFICATIONS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Thermal resistance, junction-to-case per leg per device TEST CONDITIONS MIN. - RthJC Marking device 1000 TJ = -55 °C 30 20 100 TJ = 125 °C TJ = 150 °C TJ = 175 °C 0 10 1000 1st line 2nd line TJ = 25 °C 2nd line CT - Junction Capacitance (pF) 50 1st line 2nd line 2nd line IF - Instantaneous Forward Current (A) °C/W °C/W 10000 1000 10000 10 2.0 2.6 1.0 1.3 3C16CP07L Axis Title Axis Title 60 40 TYP. 100 100 TJ = 25 °C f = 1.0 MHz 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1 10 100 10 1000 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics, Per Leg Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg Axis Title Axis Title 10000 10 10000 TJ = 175 °C TJ = 25 °C TJ = 150 °C 1000 1000 0.01 2nd line IFSM (A) 0.1 TJ = 110 °C 100 100 0.001 1st line 2nd2nd lineline 1 1st line 2nd line 2nd line IR - Reverse Current (µA) 1000 100 TJ = 125 °C TJ = 25 °C TJ = -55 °C 10 0.0001 0 100 200 300 400 500 600 700 10 0.01 10 0.1 1 10 VR - Reverse Voltage (V) tp (ms) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage, Per Leg Fig. 4 - Non-Repetitive Peak Forward Surge Current vs. Pulse Duration, Per Leg (Square Wave) Revision: 07-Dec-2022 Document Number: 97043 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C16CP07L-M3 www.vishay.com Vishay Semiconductors Axis Title 10000 1000 1st line 2nd line ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 DC 0.1 0.00001 0.0001 0.001 100 10 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 5 - Typical Thermal Impedance ZthJC Characteristics, Per Leg Axis Title 8 10000 7 140 100 120 6 1000 5 1st line 2nd line 1000 2nd line Capacitive Energy (µJ) 160 1st line 2 d li 2nd line Allowable Case Temperature (°C) Axis Title 10000 180 4 3 100 TJ = 25 °C 2 1 10 100 0 2 4 6 8 10 0 10 0 IF - Continuous Forward Current (A) 100 200 400 500 600 700 Reverse Voltage (V) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage, Per Leg Axis Title Axis Title 80 10000 35 10000 70 1000 RthJC typ. 50 40 RthJC max. 30 100 20 25 1000 1st line 2nd line 60 2nd line Capacitive Charge (nC) 30 1st line 2nd line 2nd line Allowable Input Power (W) 300 20 15 100 TJ = 25 °C 10 5 10 0 10 25 50 75 100 125 150 175 10 0 0 100 200 300 400 500 600 700 Case Temperature (°C) Reverse Voltage (V) Fig. 7 - Forward Power Loss Characteristics, Per Leg Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage, Per Leg Revision: 07-Dec-2022 Document Number: 97043 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3C16CP07L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3C 16 C P 07 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - 3C = SiC diode, Generation 3 3 - Current rating (16 = 16 A) 4 - C = common cathode 5 - P = package TO-247 6 - Voltage rating: (07 = 650 V) 7 - L = long lead 8 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION PREFERRED P/N VS-3C16CP07L-M3 BASE QUANTITY PACKAGING DESCRIPTION 25/tube Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95626 Part marking information www.vishay.com/doc?95007 Revision: 07-Dec-2022 Document Number: 97043 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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