VS-3C16ET07T-M3
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650 V Power SiC Gen 3 Merged PIN Schottky Diode, 16 A
FEATURES
Base cathode
2
• Majority carrier diode using Schottky technology
on SiC wide band gap material
• Improved VF and efficiency by thin wafer
technology
• Positive VF temperature coefficient for easy
paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• MPS structure for high ruggedness to forward current
surge events
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275 °C maximum, 10 s per
JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
3
Anode
1
Cathode
3
TO-220AC 2L
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Application
Notes
PRIMARY CHARACTERISTICS
IF(AV)
16 A
DESCRIPTION / APPLICATIONS
VR
650 V
VF at IF at 150 °C
1.5 V
TJ max.
175 °C
IR at VR at 175 °C
6.5 μA
Wide band gap SiC based 650 V Schottky diode, designed
for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
QC (VR = 400 V)
44 nC
Package
TO-220AC 2L
Circuit configuration
Single
MECHANICAL DATA
Case: TO-220AC 2L
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Mounting torque: 10 in-lbs maximum
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
DC blocking voltage
VDC
Repetitive peak forward current
IFRM
Non-repetitive peak forward surge current
IFSM
Power dissipation
Ptot (1)
I2t value
i
Operating junction and storage temperatures
2
dt
TEST CONDITIONS
VALUES
UNITS
650
V
16
A
650
V
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %
60
A
TC = 25 °C, tp = 10 ms, half sine wave
104
TC = 110 °C, tp = 10 ms, half sine wave
95
TC = 123 °C (DC)
TC = 25 °C
89
TC = 110 °C
39
TC = 25 °C
54
TC = 110 °C
46
TJ(2), TStg
-55 to +175
A
W
A2s
°C
Notes
(1) Based on maximum R
th
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
θJA
Revision: 22-Feb-2023
Document Number: 97041
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3C16ET07T-M3
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Forward voltage
TEST CONDITIONS
VF
Reverse leakage current
IR
Total capacitance
C
Total capacitive charge
QC
MIN.
TYP.
MAX.
IF = 16 A
-
1.3
1.5
IF = 16 A, TJ = 150 °C
-
1.50
1.80
IF = 16 A, TJ = 175 °C
-
1.58
-
UNITS
V
VR = VR rated
-
1.0
85
VR = VR rated, TJ = 150 °C
-
4
200
VR = VR rated, TJ = 175 °C
-
6.5
-
VR = 1 V, f = 1 MHz
-
700
-
VR = 400 V, f = 1 MHz
-
70
-
VR = 400 V, f = 1 MHz
-
44
-
nC
MIN.
TYP.
MAX.
UNITS
-
1.3
1.7
°C/W
μA
pF
THERMAL - MECHANICAL SPECIFICATIONS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Thermal resistance, junction-to-case
TEST CONDITIONS
RthJC
Marking device
3C16ET07T
Axis Title
Axis Title
2nd line
IF - Instantaneous Forward Current (A)
70
10000
1000
10000
TJ = -55 °C
50
1000
1st line
2nd line
40
30
100
20
TJ = 125 °C
TJ = 150 °C
TJ = 175 °C
10
0
10
1000
1st line
2nd line
60
2nd line
CT - Junction Capacitance (pF)
TJ = 25 °C
100
100
TJ = 25 °C
f = 1.0 MHz
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
10
100
10
1000
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Axis Title
Axis Title
10000
10
10000
1000
1
TJ = 25 °C
TJ = 175 °C
TJ = 150 °C
1000
1000
TJ = 110 °C
1st line
2nd line
0.01
2nd line
IFSM (A)
0.1
1st line
2nd line
2nd line
IR - Reverse Current (µA)
1
100
100
0.001
100
TJ = 125 °C
TJ = 25 °C
TJ = -55 °C
10
0.0001
0
100
200
300
400
500
600
700
10
0.01
10
0.1
1
10
VR - Reverse Voltage (V)
tp (ms)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 4 - Non-Repetitive Peak Forward Surge Current vs.
Pulse Duration (Square Wave)
Revision: 22-Feb-2023
Document Number: 97041
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3C16ET07T-M3
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Vishay Semiconductors
Axis Title
1
1000
1st line
2nd line
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10000
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
100
10
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 5 - Typical Thermal Impedance ZthJC Characteristics
Axis Title
Axis Title
10000
10000
16
140
100
120
12
1000
10
1st line
2nd line
1000
2nd line
Capacitive Energy (µJ)
14
160
1st line
2nd line
2nd line
Allowable Case Temperature (°C)
180
8
6
100
TJ = 25 °C
4
2
10
100
0
5
10
15
10
0
20
0
100
200
400
500
600
700
IF - Continuous Forward Current (A)
Reverse Voltage (V)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 8 - Typical Capacitive Energy vs. Reverse Voltage
Axis Title
Axis Title
10000
120
10000
70
60
1000
1st line
2nd line
RthJC typ.
60
RthJC max.
100
40
20
50
1000
40
1st line
2nd line
80
2nd line
Capacitive Charge (nC)
100
2nd line
Allowable Input Power (W)
300
30
100
TJ = 25 °C
20
10
0
10
25
50
75
100
125
150
175
0
10
0
100
200
300
400
500
600
700
Case Temperature (°C)
Reverse Voltage (V)
Fig. 7 - Forward Power Loss Characteristics
Fig. 9 - Typical Capacitive Charge vs. Reverse Voltage
Revision: 22-Feb-2023
Document Number: 97041
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3C16ET07T-M3
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
3C
16
E
T
07
T
-M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
3C = SiC diode, Generation 3
3
-
Current rating (16 = 16 A)
4
-
E = single diode
5
-
Package TO-220
6
-
Voltage rating: (07 = 650 V)
7
-
T = true 2 pin
8
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-3C16ET07T-M3
50/tube
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96069
Part marking information
www.vishay.com/doc?95391
Revision: 22-Feb-2023
Document Number: 97041
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-220AC 2L
DIMENSIONS in millimeters and inches
(6)
B
Seating
plane
A
E
A
ØP
0.014 M B A M
E2 (7)
A
Thermal pad
E
A1
Q
(6)
H1
(7)
(6) D
H1
D2 (6)
Detail B
D1
1
2
(2) L1
C
E1 (6)
1
2
L
D
C
Base metal
D
C
L1 (2)
A
b1, b3
(4)
Section C - C and D - D
View A - A
A2
Plating
c1 (4)
c
c
2 x b 2 x b2
Detail B
e1
(b, b2)
0.015 M B A M
SYMBOL
MILLIMETERS
INCHES
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
E1
A1
1.14
1.40
0.045
0.055
E2
-
0.76
A2
2.56
2.92
0.101
0.115
e1
4.88
5.28
b
0.69
1.01
0.027
0.040
b1
0.38
0.97
0.015
0.038
b2
1.20
1.73
0.047
0.068
b3
1.14
1.73
0.045
0.068
INCHES
MAX.
MIN.
MAX.
6.86
8.89
0.270
0.350
6
-
0.030
7
0.192
0.208
H1
5.84
6.86
0.230
0.270
4
L
13.52
14.02
0.532
0.552
L1
3.32
3.82
0.131
0.150
4
ØP
3.54
3.73
0.139
0.147
Q
2.60
3.00
0.102
0.118
c
0.36
0.61
0.014
0.024
c1
0.36
0.56
0.014
0.022
4
3
D
14.85
15.25
0.585
0.600
D1
8.38
9.02
0.330
0.355
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
NOTES
MIN.
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480"
Revision: 14-Mar-2022
Document Number: 96069
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Disclaimer
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