VS-3ECH02-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 3 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
Cathode
Anode
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D
DESCRIPTION / APPLICATIONS
3D Models
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
PRIMARY CHARACTERISTICS
IF(AV)
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
3A
VR
200 V
VF at IF
0.69 V
trr
25 ns
TJ max.
175 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element.
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TSp = 142 °C
Non-repetitive peak surge current
IFSM
TJ = 25 °C, 6 ms square pulse
Operating junction and storage temperatures
TJ, TStg
VALUES
UNITS
200
V
3
A
130
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
VBR, VR
Forward voltage, per diode
VF
Reverse leakage current, per diode
IR
Junction capacitance
CT
Revision: 13-Apr-2021
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 3 A
-
0.83
0.90
IF = 3 A, TJ = 125 °C
-
0.69
0.75
VR = VR rated
-
-
2
TJ = 125 °C, VR = VR rated
-
2
10
VR = 200 V
-
23
-
IR = 100 μA
UNITS
V
μA
pF
Document Number: 95836
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH02-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
Reverse recovery time
trr
Reverse recovery charge
-
-
-
25
-
18
-
IF = 3 A,
dIF/dt = 200 A/μs,
VR = 100 V
TJ = 125 °C
TJ = 25 °C
Qrr
MAX.
27
TJ = 25 °C
TJ = 25 °C
IRRM
TYP.
-
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
TJ = 125 °C
Peak recovery current
MIN.
TJ = 125 °C
UNITS
ns
-
30
-
-
2.1
-
-
4
-
-
19
-
-
60
-
MIN.
TYP.
MAX.
UNITS
-55
-
175
°C
-
7.7
14
°C/W
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Thermal resistance, junction to mount
Device mounted on PCB with 2 x 3.5 mm
soldering lands
RthJM
Approximate weight
3H2
1000
100
TJ = 175 °C
10
1
0.1
g
oz.
Case style SMC (DO-214AB)
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
Marking device
0.24
0.008
TJ = 150°C
TJ = 125°C
TJ = 25 °C
TJ = -40 °C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.001
0
50
100
150
200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 13-Apr-2021
Document Number: 95836
2
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH02-M3
www.vishay.com
Vishay Semiconductors
100
3
Average Power Loss (W)
CT - Junction Capacitance (pF)
RMS limit
2.5
10
2
1
0.5
0
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
3.5
VR - Reverse Voltage (V)
IF(AV) - Average Forward Current (A)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 5 - Forward Power Loss Characteristics
180
45
40
170
35
160
30
DC
trr (ns)
Allowable Case Temperature (°C)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
1.5
150
20
Square wave (D = 0.50)
Rated VR applied
140
125 °C
25
15
130
25 °C
10
See note (1)
120
5
0
0.5
1
1.5
2
2.5
3
3.5
100
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
120
100
125 °C
Qrr (nC)
80
60
40
25 °C
20
0
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 13-Apr-2021
Document Number: 95836
3
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-3ECH02-M3
www.vishay.com
Vishay Semiconductors
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(4) Qrr - area under curve defined by trr
and IRRM
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
Qrr =
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
3
E
C
H
02
-M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current code (3 = 3 A)
3
-
Circuit configuration:
E = single diode
4
-
C = SMC package
5
-
Process type,
6
-
Voltage code (02 = 200 V)
7
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
H = hyperfast recovery
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-3ECH02-M3/9AT
QUANTITY PER REEL
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
3500
3500
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95402
Part marking information
www.vishay.com/doc?95472
Packaging information
www.vishay.com/doc?95404
Revision: 13-Apr-2021
Document Number: 95836
4
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMC
DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 95402
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000