VS-3EGU06WHM3/5BT

VS-3EGU06WHM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 3 A FRED Pt® FEATURES Cathode • Ultrafast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM, snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode SMB (DO-214AA) LINKS TO ADDITIONAL RESOURCES 3D 3D DESCRIPTION / APPLICATIONS 3D Models State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC Boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRIMARY CHARACTERISTICS IF(AV) 3A VR 600 V VF at IF 0.99 V trr typ. 41 ns TJ max. 175 °C Package SMB (DO-214AA) Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes the cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TL = 110 °C (1) 3 Non-repetitive peak surge current per leg IFSM TJ = 25 °C, 6 ms square pulse 55 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 3 A - 1.15 1.35 IF = 3 A, TJ = 150 °C - 0.99 1.2 VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - - 100 VR = 600 V - 3.9 - UNITS V μA pF Revision:17-Mar-2021 Document Number: 95852 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EGU06WHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 41 - IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 52 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 65 TJ = 25 °C - 38 - TJ = 125 °C Peak recovery current Reverse recovery charge - 52 - 5.6 - - 7.3 - TJ = 25 °C - 108 - TJ = 125 °C - 193 - MIN. TYP. MAX. UNITS -55 - +175 °C TJ = 125 °C Qrr ns - IF = 3 A dIF/dt = 200 A/μs VR = 390 V TJ = 25 °C IRRM UNITS A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM (1) - - 18 Thermal resistance, junction to ambient RthJA (1) - - 90 Approximate Weight Marking device °C/W 0.1 g 0.003 oz. Case style SMB (DO-214AA) 3U6H 100 100 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Note (1) Mounted on PCB with minimum pad size TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C 10 150 °C 1 125 °C 0.1 25 °C 0.01 0.001 TJ = -40 °C 0.1 0.0001 0.2 0.6 1.0 1.4 1.8 2.2 2.6 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision:17-Mar-2021 Document Number: 95852 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EGU06WHM3 www.vishay.com Vishay Semiconductors 5 RMS Limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 1 3 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 2 1 0 0 100 200 300 400 500 600 0 1 2 3 4 5 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 200 80 180 70 160 60 IF = 3 A, 125 °C 50 140 DC trr (ns) Allowable Case Temperature (°C) 4 120 40 30 100 Square wave (D = 0.50) 80 % rated VR applied 80 IF = 3 A, 25 °C 20 10 60 typical value See note (1) 0 100 40 0 1 2 3 4 5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 350 300 IF = 3 A, 125 °C Qrr (nC) 250 200 150 IF = 3 A, 25 °C 100 50 typical value 0 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision:17-Mar-2021 Document Number: 95852 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EGU06WHM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 3 E G U 06 W H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - G = SMB package 5 - Process type, U = ultrafast recovery 6 - Voltage code (06 = 600 V) 7 - W = special 8 - H = AEC-Q101 qualified 9 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-3EGU06WHM3/5BT PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95624 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96667 Revision:17-Mar-2021 Document Number: 95852 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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