VS-3EJH01-M3/6A

VS-3EJH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt® FEATURES eSMP® Series Top View • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Low forward voltage drop • Low leakage current • Specific for output and snubber operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View SlimSMA (DO-221AC) Cathode Anode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in snubber, boost, lighting, as high frequency rectifiers and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 3A VR 100 V VF at IF 0.74 V trr 30 ns TJ max. 175 °C Package SlimSMA (DO-221AC) Circuit configuration Single MECHANICAL DATA Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 100 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 145 °C (1) 3 Non-repetitive peak surge current IFSM TJ = 25 °C 85 Operating junction and storage temperatures TJ, TStg A -65 to +175 °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 3 A - 0.86 0.93 0.78 IR = 100 μA IF = 3 A, TJ = 125 °C - 0.74 VR = VR rated - - 2 TJ = 125 °C, VR = VR rated - 0.5 8 VR = 100 V - 13 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 94903 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Reverse recovery charge - 26 - - - 30 TJ = 25 °C - 18 - - 26 - - 2.5 - - 4 - TJ = 25 °C - 23 - TJ = 125 °C - 50 - TJ = 125 °C Qrr MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V TJ = 25 °C IRRM TYP. IF = 0.5 A, IR = 1 A, Irr = 0.25 A TJ = 125 °C Peak recovery current MIN. IF = 3 A dIF/dt = 200 A/μs VR = 160 V UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg MIN. TYP. MAX. UNITS -65 - 175 °C Thermal resistance, junction to mount RthJM Device mounted on PCB with 8 mm x 16 mm soldering lands - 8 10 Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands - 91 110 °C/W Approximate Weight g oz. Case style SlimSMA (DO-221AC) 100 3H1 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.032 0.0011 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C 175 °C 10 150 °C 1 125 °C 0.1 25 °C 0.01 TJ = -40 °C 0.1 0.001 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 20 40 60 80 100 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 94903 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJH01-M3 www.vishay.com Vishay Semiconductors 3.5 RMS limit Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 3 2.5 2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 1.5 1 0.5 1 0 0 20 40 60 80 100 0 VR - Reverse Voltage (V) 1.2 1.8 2.4 3 3.6 4.2 4.8 IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 35 180 175 30 170 25 165 trr (ns) Allowable Case Temperature (°C) 0.6 160 DC 155 15 Square wave (D = 0.50) 80 % rated VR applied 150 125 °C 20 25 °C 10 145 See note (1) 5 140 0 0.5 1 1.5 2 2.5 3 100 3.5 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery vs. dIF/dt 70 60 125 °C Qrr (nC) 50 40 25 °C 30 20 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 28-Jan-2021 Document Number: 94903 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJH01-M3 www.vishay.com Vishay Semiconductors ZthJL - Thermal Impedance Junction to Lead (°C/W) 10 1 ZthJL 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 8 - Typical Thermal Impedance ZthJL Junction-to-Lead ZthJA - Thermal Impedance Junction to Ambient (°C/W) 100 ZthJA 10 1 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 9 - Typical Thermal Impedance ZthJA Junction-to-Ambient (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 28-Jan-2021 Document Number: 94903 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EJH01-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3 E J H 01 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - J = SlimSMA package 5 - Process type, H = hyperfast recovery 6 - Voltage code (01 = 100 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-3EJH01-M3/6A 3500 3500 7"diameter plastic tape and reel VS-3EJH01-M3/6B 14 000 14 000 13"diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95771 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 Revision: 28-Jan-2021 Document Number: 94903 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DO-221AC (SlimSMA) DIMENSIONS in inches (millimeters) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 21-Jul-14 Document Number: 95571 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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